公开(公告)号：US20220130437A1

公开(公告)日：2022-04-28

申请号：US17239647

申请日：2021-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEHWAN PARK ,  JINYOUNG KIM ,  YOUNGDEOK SEO ,  ILHAN PARK

IPC: G11C7/10 ,  G11C7/14 ,  G11C7/18 ,  G11C8/08

Abstract: A storage device includes at least one non-volatile memory device and a controller configured to control the at least one non-volatile memory device. The at least one non-volatile memory device performs an on-chip valley search (OVS) operation by latching a read command at an edge of a write enable (WE) signal according to a command latch enable (CLE) signal and an address latch enable (ALE) signal. The controller receives detection information according to the OVS operation from the at least one non-volatile memory device in response to a specific command. The OVS operation includes a first OVS operation using a read level and a second OVS operation using a changed read level.

公开(公告)号：US20220189575A1

公开(公告)日：2022-06-16

申请号：US17376932

申请日：2021-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGDEOK SEO ,  WOOHYUN KANG ,  JINYOUNG KIM ,  KANGHO ROH ,  SEHWAN PARK ,  ILHAN PARK ,  HEETAI OH ,  HEEWON LEE ,  SILWAN CHANG ,  SANGHYUN CHOI

IPC: G11C29/42 ,  G11C29/44 ,  G11C29/12 ,  G11C7/10 ,  G06N20/00

Abstract: A memory device may determine cell count information from a threshold voltage distribution of memory cells and may determine a detection case based on cell count information when correction of an error in read data, received from the memory device performing a read operation, fails. The memory controller may control the memory device to perform a read operation using a development time determined in consideration of an offset voltage of a read voltage corresponding to the detection case. When correction of the error in the read data fails again, the memory controller may control the memory device to perform a read operation using a corrected read voltage generated using a dynamic offset voltage obtained by inputting the cell count information to a machine learning model.

公开(公告)号：US20240046993A1

公开(公告)日：2024-02-08

申请号：US18170893

申请日：2023-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： WOOHYUN KANG ,  JIN-YOUNG KIM ,  HYUNA KIM ,  SE HWAN PARK ,  YOUNGDEOK SEO ,  HYUNKYO OH ,  HEEWON LEE ,  DONGHOO LIM

IPC: G11C16/12 ,  G11C16/26 ,  G06F11/10

CPC classification number: G11C16/12 ,  G11C16/26 ,  G06F11/1044

Abstract: A method of operating a non-volatile memory device, which is configured to communicate with a storage controller includes: receiving a first request indicating a read reclaim determination and including environment information from the storage controller, performing a first on-chip read operation for generating first distribution information based on the first request, determining whether a read reclaim is required based on the first distribution information, and providing the storage controller with a determination result having a first bit value in response to determining that the read reclaim is required.

公开(公告)号：US20210109660A1

公开(公告)日：2021-04-15

申请号：US16999201

申请日：2020-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YEONJI KIM ,  YOUNGDEOK SEO ,  CHANHA KIM ,  KANGHO ROH ,  HYUNKYO OH ,  HEEWON LEE

IPC: G06F3/06

Abstract: An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.