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公开(公告)号:US20250029941A1
公开(公告)日:2025-01-23
申请号:US18439381
申请日:2024-02-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: HYUNSU HWANG , UN-BYOUNG KANG , KUYOUNG KIM , JUMYONG PARK , DONGJOON OH , SANGHOO CHO
IPC: H01L23/00
Abstract: Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a substrate, a seed layer on the substrate, and a wiring pad on the seed layer. The wiring pad includes a pad portion, and a capping layer on the seed layer and covering a top surface and a lateral surface of the pad portion. A bottom surface of the pad portion is in contact with a top surface of the seed layer. A width of the top surface of the pad portion is greater than a width of the bottom surface of the pad portion.
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公开(公告)号:US20250125290A1
公开(公告)日:2025-04-17
申请号:US18647497
申请日:2024-04-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: HYUNSU HWANG , JUMYONG PARK , DONGJOON OH , SANGHOO CHO , JEONGGI JIN
IPC: H01L23/00 , H01L21/48 , H01L23/498 , H01L23/522 , H01L23/532
Abstract: A semiconductor device includes a structure including a dielectric layer and a wire pattern embedded in the dielectric layer. The dielectric layer includes first regions and a second region around the first regions. The second region has an upper surface positioned at a lower level than upper surfaces of the first regions. A barrier layer is on the structure. The barrier layer is disposed on each first region among the first regions and is connected to the wire pattern. A seed metal layer is on the barrier layer. A conductive pad is on the seed metal layer.
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公开(公告)号:US20240006288A1
公开(公告)日:2024-01-04
申请号:US18369684
申请日:2023-09-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Junyun Kweon , JUMYONG PARK , JIN HO AN , Dongjoon Oh , JEONGGI JIN , HYUNSU HWANG
IPC: H01L23/498 , H01L23/538 , H01L23/00 , H01L25/10
CPC classification number: H01L23/49822 , H01L23/49833 , H01L23/49838 , H01L23/5385 , H01L23/5386 , H01L24/16 , H01L24/48 , H01L24/73 , H01L25/105 , H01L23/49816 , H01L2225/1058 , H01L2224/16235 , H01L2924/182 , H01L2224/48228 , H01L2224/73204 , H01L2225/1023 , H01L2225/1035
Abstract: Disclosed are interconnection patterns and semiconductor packages including the same. The interconnection pattern comprises a first dielectric layer, a first interconnection pattern in the first dielectric layer, a first barrier layer between the first interconnection pattern and the first dielectric layer, a first top surface of the first barrier layer located at a level lower than that of a second top surface of the first dielectric layer and lower than that of a third top surface of the first interconnection pattern, a second barrier layer on the first barrier layer, the second barrier layer interposed between the first interconnection pattern and the first dielectric layer, a second dielectric layer on the first dielectric layer, the first interconnection pattern, and the second barrier layer, and a second interconnection pattern formed in the second dielectric layer and electrically coupled to the first interconnection pattern.
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公开(公告)号:US20230096678A1
公开(公告)日:2023-03-30
申请号:US17850714
申请日:2022-06-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JUNYUN KWEON , JUMYONG PARK , SOLJI SONG , DONGJOON OH , CHUNGSUN LEE , HYUNSU HWANG
Abstract: A method of manufacturing a semiconductor package, includes forming a mask layer on a wafer, the wafer including a semiconductor substrate and an insulating layer; forming a groove in the semiconductor substrate by performing a first laser grooving process; expanding an opening of the mask layer opened by the first laser grooving process by performing a second laser grooving process; exposing a portion of the insulating layer by removing a portion of the mask layer; and cutting the semiconductor substrate while removing the portion of the insulating layer exposed during the exposing by performing a dicing process.
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公开(公告)号:US20230010936A1
公开(公告)日:2023-01-12
申请号:US17568355
申请日:2022-01-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JEONGGI JIN , GYUHO KANG , UNBYOUNG KANG , HEEWON KIM , JUMYONG PARK , HYUNSU HWANG
IPC: H01L23/00 , H01L23/48 , H01L23/532 , H01L23/522
Abstract: A semiconductor chip includes: a semiconductor substrate; a pad insulating layer on the semiconductor substrate; a through electrode which penetrates the semiconductor substrate and the pad insulating layer and includes a conductive plug and a conductive barrier layer surrounding a sidewall of the conductive plug; and a bonding pad which surrounds a sidewall of the through electrode and is spaced apart from the conductive plug with the conductive barrier layer disposed therebetween.
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