公开(公告)号：US09941247B2

公开(公告)日：2018-04-10

申请号：US14790451

申请日：2015-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hae-Suk Lee ,  Kyo-Min Sohn ,  Ho-Young Song ,  Sang-Hoon Shin ,  Han-Vit Jung

IPC: G11C11/4093 ,  H01L25/065 ,  G11C7/10

CPC classification number: H01L25/0657 ,  G11C7/1066 ,  G11C7/1069 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A memory device including a stack semiconductor device including; an upper substrate vertically stacked on a lower substrate, the upper substrate including N upper through-silicon vias (UTSV) and upper driving circuits, and the lower substrate including N lower through-silicon vias (LTSV) and lower driving circuits, wherein each one of the upper driving circuits is stagger-connected between a Kth UTSV and a (K+1)th LTSV, where ‘N’ is a natural number greater than 1, and ‘K’ is a natural number ranging from 1 to (N−1).

公开(公告)号：US11836097B2

公开(公告)日：2023-12-05

申请号：US17229198

申请日：2021-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Won Park ,  Je-Min Ryu ,  Sang-Hoon Shin ,  Jae-Hoon Jung

IPC: G06F13/16 ,  G06F12/06 ,  G06F12/0866

CPC classification number: G06F13/1673 ,  G06F12/0607 ,  G06F12/0866 ,  G06F2212/601

Abstract: A memory device includes a first channel including a first cell array and communicating with a memory controller through a first path, a second channel including a second cell array and communicating with the memory controller through a second path, and an assignment control circuit configured to monitor memory usage of the first and second channels and further assign a storage space of a portion of the second cell array to the first channel when the memory usage of the first cell array exceeds a threshold value. Access to the storage space of the portion of the second cell array assigned to the first channel is performed through the first path.

公开(公告)号：US10678631B2

公开(公告)日：2020-06-09

申请号：US16032368

申请日：2018-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Hoon Shin ,  Hae-Suk Lee ,  Han-Vit Jung ,  Kyo-Min Sohn

IPC: G06F11/00 ,  G06F11/07 ,  G06F11/14 ,  G06F11/16 ,  G06F11/18 ,  G06F11/20

Abstract: A device, system, and/or method includes an internal circuit configured to perform at least one function, an input-output terminal set and a repair circuit. The input-output terminal set includes a plurality of normal input-output terminals connected to an external device via a plurality of normal signal paths and at least one repair input-output terminal selectively connected to the external device via at least one repair signal path. The repair circuit repairs at least one failed signal path included in the normal signal paths based on a mode signal and fail information signal, where the mode signal represents whether to use the repair signal path and the fail information signal represents fail information on the normal signal paths. Using the repair circuit, various systems adopting different repair schemes may be repaired and cost of designing and manufacturing the various systems may be reduced.

公开(公告)号：USRE50078E1

公开(公告)日：2024-08-13

申请号：US17546251

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Hoon Shin ,  Hae-Suk Lee ,  Han-Vit Jung ,  Kyo-Min Sohn

IPC: G06F11/00 ,  G06F11/07 ,  G06F11/14 ,  G06F11/16 ,  G06F11/18 ,  G06F11/20

CPC classification number: G06F11/1423 ,  G06F11/0703 ,  G06F11/0793 ,  G06F11/0796 ,  G06F11/142 ,  G06F11/1616 ,  G06F11/18 ,  G06F11/2002 ,  G06F11/2017

Abstract: A device, system, and/or method includes an internal circuit configured to perform at least one function, an input-output terminal set and a repair circuit. The input-output terminal set includes a plurality of normal input-output terminals connected to an external device via a plurality of normal signal paths and at least one repair input-output terminal selectively connected to the external device via at least one repair signal path. The repair circuit repairs at least one failed signal path included in the normal signal paths based on a mode signal and fail information signal, where the mode signal represents whether to use the repair signal path and the fail information signal represents fail information on the normal signal paths. Using the repair circuit, various systems adopting different repair schemes may be repaired and cost of designing and manufacturing the various systems may be reduced.

公开(公告)号：US20210232513A1

公开(公告)日：2021-07-29

申请号：US17229198

申请日：2021-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAE-WON PARK ,  Je-Min Ryu ,  Sang-Hoon Shin ,  Jae-Hoon Jung

IPC: G06F13/16 ,  G06F12/06 ,  G06F12/0866

Abstract: A memory device includes a first channel including a first cell array and communicating with a memory controller through a first path, a second channel including a second cell array and communicating with the memory controller through a second path, and an assignment control circuit configured to monitor memory usage of the first and second channels and further assign a storage space of a portion of the second cell array to the first channel when the memory usage of the first cell array exceeds a threshold value. Access to the storage space of the portion of the second cell array assigned to the first channel is performed through the first path.

公开(公告)号：US11010316B2

公开(公告)日：2021-05-18

申请号：US16115089

申请日：2018-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Won Park ,  Je-Min Ryu ,  Sang-Hoon Shin ,  Jae-Hoon Jung

IPC: G06F13/16 ,  G06F12/06 ,  G06F12/0866

Abstract: A memory device includes a first channel including a first cell array and communicating with a memory controller through a first path, a second channel including a second cell array and communicating with the memory controller through a second path, and an assignment control circuit configured to monitor memory usage of the first and second channels and further assign a storage space of a portion of the second cell array to the first channel when the memory usage of the first cell array exceeds a threshold value. Access to the storage space of the portion of the second cell array assigned to the first channel is performed through the first path.

公开(公告)号：US10296414B2

公开(公告)日：2019-05-21

申请号：US15650096

申请日：2017-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Hoon Shin ,  Hae-Suk Lee ,  Han-Vit Jung ,  Kyo-Min Sohn

IPC: G06F11/00 ,  G06F11/07 ,  G06F11/14 ,  G06F11/16 ,  G06F11/18 ,  G06F11/20

Abstract: A device, system, and/or method includes an internal circuit configured to perform at least one function, an input-output terminal set and a repair circuit. The input-output terminal set includes a plurality of normal input-output terminals connected to an external device via a plurality of normal signal paths and at least one repair input-output terminal selectively connected to the external device via at least one repair signal path. The repair circuit repairs at least one failed signal path included in the normal signal paths based on a mode signal and fail information signal, where the mode signal represents whether to use the repair signal path and the fail information signal represents fail information on the normal signal paths. Using the repair circuit, various systems adopting different repair schemes may be repaired and cost of designing and manufacturing the various systems may be reduced.

公开(公告)号：US11194579B2

公开(公告)日：2021-12-07

申请号：US16199679

申请日：2018-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Sung Shin ,  Sung-Ho Park ,  Chan-Kyung Kim ,  Yong-Sik Park ,  Sang-Hoon Shin

IPC: G06F9/355 ,  G06F9/30 ,  G06F9/345 ,  G06F12/0815

Abstract: A memory device includes a memory cell array formed in a semiconductor die, the memory cell array including a plurality of memory cells to store data and a calculation circuit formed in the semiconductor die. The calculation circuit performs calculations based on broadcast data and internal data and omits the calculations with respect to invalid data and performs the calculations with respect to valid data based on index data in a skip calculation mode, where the broadcast data are provided from outside the semiconductor die, the internal data are read from the memory cell array, and the index data indicates whether the internal data are the valid data or the invalid data. Power consumption is reduced by omitting the calculations and the read operation with respect to the invalid data through the skip calculation mode based on the index data.