公开(公告)号：US08711649B2

公开(公告)日：2014-04-29

申请号：US13742488

申请日：2013-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Jung Kim ,  Chul Woo Park ,  Sang Beom Kang ,  Hyun Ho Choi ,  Jung Min Lee ,  Seung Eon Ahn

IPC: G11C7/00

CPC classification number: G11C5/14 ,  G11C5/147 ,  G11C7/22 ,  G11C8/08 ,  G11C8/10 ,  G11C16/04 ,  G11C16/20 ,  G11C29/02 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028 ,  G11C2029/4402 ,  G11C2207/2254

Abstract: A method of changing a parameter in a semiconductor device is provided. The method includes receiving and storing data in a storage region; and changing at least one between a DC characteristic and an AC timing characteristic of a parameter, used to access a non-volatile memory cell included in a memory core of the semiconductor device, according to the data stored in the storage.

Abstract translation: 提供了一种改变半导体器件中的参数的方法。 该方法包括在存储区域中接收和存储数据; 以及根据存储在存储器中的数据，在用于访问包括在半导体器件的存储器核心中的非易失性存储单元的参数的DC特性和AC定时特性之间改变至少一个。

公开(公告)号：US09135996B2

公开(公告)日：2015-09-15

申请号：US14047626

申请日：2013-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Deok-kee Kim ,  Ho Jung Kim

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0064 ,  G11C2013/0066 ,  G11C2213/72

Abstract: A variable resistance memory device includes a variable resistance memory cell, a switch that selectively passes a write voltage to an input terminal of the variable resistance memory cell, and a trigger circuit that controls the switch to cut off the write voltage from the input terminal upon determining that the variable resistance memory cell is programmed to a target state by detecting voltage fluctuation of the one side of variable resistance memory cell.

Abstract translation: 可变电阻存储器件包括可变电阻存储单元，选择性地将写入电压传递到可变电阻存储单元的输入端的开关，以及触发电路，其控制开关从输入端截取写入电压， 通过检测可变电阻存储单元的一侧的电压波动来确定可变电阻存储单元被编程为目标状态。

公开(公告)号：US08631202B2

公开(公告)日：2014-01-14

申请号：US13626077

申请日：2012-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Jung Kim

IPC: G06F12/00

CPC classification number: G06F3/0658 ,  G06F3/0619 ,  G06F3/0688 ,  G06F11/108

Abstract: A controller may include a RAID controller and an access controller. The RAID controller exchanges data with a host and select ones of a plurality of RAID levels responsive to RAID level information. The access controller is connected to the RAID controller and to a plurality of channels that are each connected to a plurality of non-volatile memory chips. The access controller accesses data in at least one of the non-volatile memory chips connected to each of the channels according to the selected RAID level. The controller can include a storage device and a main processor. The main processor logically partitions a plurality of non-volatile memory chips connected to each of a plurality of channels into a normal partition region and a RAID level partition region, where data access is performed according to a selected RAID level, in response partition information that is stored in the storage device.

Abstract translation: 控制器可以包括RAID控制器和访问控制器。 RAID控制器与主机交换数据，并根据RAID级别信息选择多个RAID级别中的一个。 访问控制器连接到RAID控制器和连接到多个非易失性存储器芯片的多个通道。 访问控制器根据所选择的RAID级别访问连接到每个信道的至少一个非易失性存储器芯片中的数据。 控制器可以包括存储设备和主处理器。 主处理器将连接到多个信道中的每一个的多个非易失性存储器芯片逻辑地划分为正常分区区域和RAID级别分区区域，其中根据所选择的RAID级别执行数据访问，响应分区信息， 存储在存储设备中。

公开(公告)号：US20130128683A1

公开(公告)日：2013-05-23

申请号：US13742488

申请日：2013-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Jung Kim ,  Chul Woo Park ,  Sang Beom Kang ,  Hyun Ho Choi ,  Jung Min Lee ,  Seung Eon Ahn

IPC: G11C5/14 ,  G11C8/10

CPC classification number: G11C5/14 ,  G11C5/147 ,  G11C7/22 ,  G11C8/08 ,  G11C8/10 ,  G11C16/04 ,  G11C16/20 ,  G11C29/02 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028 ,  G11C2029/4402 ,  G11C2207/2254

Abstract: A method of changing a parameter in a semiconductor device is provided. The method includes receiving and storing data in a storage region; and changing at least one between a DC characteristic and an AC timing characteristic of a parameter, used to access a non-volatile memory cell included in a memory core of the semiconductor device, according to the data stored in the storage.

Abstract translation: 提供了一种改变半导体器件中的参数的方法。 该方法包括在存储区域中接收和存储数据; 以及根据存储在存储器中的数据，改变用于访问包括在半导体器件的存储器核心中的非易失性存储单元的参数的DC特性和AC定时特性中的至少一个。

公开(公告)号：US20130042061A1

公开(公告)日：2013-02-14

申请号：US13626077

申请日：2012-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Jung Kim

IPC: G06F12/00

CPC classification number: G06F3/0658 ,  G06F3/0619 ,  G06F3/0688 ,  G06F11/108

Abstract: A controller may include a RAID controller and an access controller. The RAID controller exchanges data with a host and select ones of a plurality of RAID levels responsive to RAID level information. The access controller is connected to the RAID controller and to a plurality of channels that are each connected to a plurality of non-volatile memory chips. The access controller accesses data in at least one of the non-volatile memory chips connected to each of the channels according to the selected RAID level. The controller can include a storage device and a main processor. The main processor logically partitions a plurality of non-volatile memory chips connected to each of a plurality of channels into a normal partition region and a RAID level partition region, where data access is performed according to a selected RAID level, in response partition information that is stored in the storage device.

Abstract translation: 控制器可以包括RAID控制器和访问控制器。 RAID控制器与主机交换数据，并根据RAID级别信息选择多个RAID级别中的一个。 访问控制器连接到RAID控制器和连接到多个非易失性存储器芯片的多个通道。 访问控制器根据所选择的RAID级别访问连接到每个信道的至少一个非易失性存储器芯片中的数据。 控制器可以包括存储设备和主处理器。 主处理器将连接到多个信道中的每一个的多个非易失性存储器芯片逻辑地划分为正常分区区域和RAID级别分区区域，其中根据所选择的RAID级别执行数据访问，响应分区信息， 存储在存储设备中。