公开(公告)号：US08956970B1

公开(公告)日：2015-02-17

申请号：US14200798

申请日：2014-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyoung-Won Oh ,  Tae-Jin Lim ,  Tae-Ki Hong

IPC: H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/28525 ,  H01L21/76816 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor pattern is formed on a substrate. An interlayer insulating layer is formed on the semiconductor pattern. A contact hole in the interlayer insulating layer is formed the semiconductor pattern is exposed. A lower plug is formed in the contact hole by a selective epitaxial growth (SEG) process. An upper plug is farmed in the contact hole on the lower plug by alternately and repeatedly performing a deposition process and an etching process.

Abstract translation: 在基板上形成半导体图形。 在半导体图案上形成层间绝缘层。 形成层间绝缘层中的接触孔，露出半导体图形。 通过选择性外延生长（SEG）工艺在接触孔中形成下部塞子。 通过交替地和重复地进行沉积处理和蚀刻工艺，在上塞子的接触孔中养殖上部塞子。

公开(公告)号：US20150284847A1

公开(公告)日：2015-10-08

申请号：US14520768

申请日：2014-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Ki Hong ,  Young-Min Park ,  Hyoung-Won Oh ,  Jin-Hyuk Choi ,  Sang-Chul Han

IPC: C23C16/455 ,  C23C16/511 ,  H01L21/02

CPC classification number: C23C16/45519 ,  C23C16/24 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/511 ,  C30B25/165 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

Abstract: In a method of forming an epitaxial layer, a first plasma may be generated from a first reaction gas in a first region. The first plasma may be applied to a second reaction gas provided to a second region isolated from the first region to generate a second plasma from the second reaction gas. A blocking gas may be injected into the second region toward an edge of the substrate to help prevent the first plasma and the second plasma from being horizontally diffused. The first plasma and the second plasma may be applied to the substrate to form the epitaxial layer. Thus, the epitaxial layer may be formed at a temperature relatively lower than a temperature in a heating process.

Abstract translation: 在形成外延层的方法中，可以从第一区域中的第一反应气体产生第一等离子体。 可以将第一等离子体施加到提供给从第一区域分离的第二区域的第二反应气体，以从第二反应气体产生第二等离子体。 阻挡气体可以朝向基板的边缘注入第二区域，以帮助防止第一等离子体和第二等离子体水平扩散。 可以将第一等离子体和第二等离子体施加到衬底以形成外延层。 因此，可以在相对低于加热过程中的温度的温度下形成外延层。