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    METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING MULTILAYERED PLUG AND RELATED DEVICE
    1.
    发明申请
    METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING MULTILAYERED PLUG AND RELATED DEVICE 有权
    形成具有多层胶片和相关装置的半导体器件的方法

    公开(公告)号：US20150050805A1

    公开(公告)日：2015-02-19

    申请号：US14200798

    申请日：2014-03-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： HYOUNG-WON OH ,  Tae-Jin Lim ,  Tae-Ki Hong

    IPC: H01L21/768

    CPC classification number: H01L21/76879 ,  H01L21/28525 ,  H01L21/76816 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor pattern is formed on a substrate. An interlayer insulating layer is formed on the semiconductor pattern. A contact hole in the interlayer insulating layer is formed the semiconductor pattern is exposed. A lower plug is formed in the contact hole by a selective epitaxial growth (SEG) process. An upper plug is formed in the contact hole on the lower plug by alternately and repeatedly performing a deposition process and an etching process.

    Abstract translation: 在基板上形成半导体图形。 在半导体图案上形成层间绝缘层。 形成层间绝缘层中的接触孔，露出半导体图形。 通过选择性外延生长（SEG）工艺在接触孔中形成下部塞子。 通过交替地和反复进行沉积处理和蚀刻工艺，在下塞子的接触孔中形成上塞子。

    Method of forming semiconductor device having multilayered plug and related device
    4.
    发明授权
    Method of forming semiconductor device having multilayered plug and related device 有权
    形成具有多层插塞的半导体器件和相关器件的方法

    公开(公告)号：US08956970B1

    公开(公告)日：2015-02-17

    申请号：US14200798

    申请日：2014-03-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyoung-Won Oh ,  Tae-Jin Lim ,  Tae-Ki Hong

    IPC: H01L21/4763 ,  H01L21/768

    CPC classification number: H01L21/76879 ,  H01L21/28525 ,  H01L21/76816 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor pattern is formed on a substrate. An interlayer insulating layer is formed on the semiconductor pattern. A contact hole in the interlayer insulating layer is formed the semiconductor pattern is exposed. A lower plug is formed in the contact hole by a selective epitaxial growth (SEG) process. An upper plug is farmed in the contact hole on the lower plug by alternately and repeatedly performing a deposition process and an etching process.

    Abstract translation: 在基板上形成半导体图形。 在半导体图案上形成层间绝缘层。 形成层间绝缘层中的接触孔，露出半导体图形。 通过选择性外延生长（SEG）工艺在接触孔中形成下部塞子。 通过交替地和重复地进行沉积处理和蚀刻工艺，在上塞子的接触孔中养殖上部塞子。

    Method of selecting one or more items according to user input and electronic device therefor
    5.
    发明授权
    Method of selecting one or more items according to user input and electronic device therefor 有权

    公开(公告)号：US12197700B2

    公开(公告)日：2025-01-14

    申请号：US18144583

    申请日：2023-05-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Won-Gi Chae ,  Do-Yeon Nam ,  Jin-Chun Park ,  Jae-Wan Seo ,  Tae-Ki Hong

    IPC: G06F3/04842 ,  G06F3/0482 ,  G06F3/0485 ,  G06F3/0488

    Abstract: A method for selecting one or more items by an electronic device is provided. The method includes, in a scroll mode in which scrolling is performed without thumbnail selection in response to a drag input, displaying a first set of thumbnails among a plurality of thumbnails on a screen by rows and columns while an additional row of thumbnails arranged after the first set of thumbnails is not displayed on the screen, wherein the plurality of thumbnails include the first set of thumbnails and the additional row of thumbnails arranged after the first set of thumbnails; detecting a user input for entering a multiple selection mode; in the multiple selection mode, detecting a first touch input on at least one first thumbnail on a first row of the first set of thumbnails on the screen while displaying the first set of thumbnails and selecting the at least one first thumbnail; in the multiple selection mode, detecting that the first touch input is on a second row of the first set of thumbnails according to a moving of the first touch input; and in the multiple selection mode, after the first touch input is detected on the second row of the first set of thumbnails, as a response to identifying that a first coordinate value related to the first touch input becomes different from a second coordinate value related to the second row of the first set of thumbnails on the screen according to a moving of the first touch input, selecting all of the thumbnails arranged in the second row of the first set of thumbnails passed over by the first touch input, the all of the thumbnails including at least one touched thumbnail arranged in the second row of the first set of thumbnails, and at least one untouched thumbnail arranged in the second row of the first set of thumbnails, wherein the first coordinate value and the second coordinate value are related to a vertical axis.

    Method of Forming an Epitaxial Layer and Apparatus for Processing a Substrate Used for the Method
    7.
    发明申请
    Method of Forming an Epitaxial Layer and Apparatus for Processing a Substrate Used for the Method 审中-公开
    形成外延层的方法和用于处理用于该方法的基板的装置

    公开(公告)号：US20150284847A1

    公开(公告)日：2015-10-08

    申请号：US14520768

    申请日：2014-10-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Tae-Ki Hong ,  Young-Min Park ,  Hyoung-Won Oh ,  Jin-Hyuk Choi ,  Sang-Chul Han

    IPC: C23C16/455 ,  C23C16/511 ,  H01L21/02

    CPC classification number: C23C16/45519 ,  C23C16/24 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/511 ,  C30B25/165 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

    Abstract: In a method of forming an epitaxial layer, a first plasma may be generated from a first reaction gas in a first region. The first plasma may be applied to a second reaction gas provided to a second region isolated from the first region to generate a second plasma from the second reaction gas. A blocking gas may be injected into the second region toward an edge of the substrate to help prevent the first plasma and the second plasma from being horizontally diffused. The first plasma and the second plasma may be applied to the substrate to form the epitaxial layer. Thus, the epitaxial layer may be formed at a temperature relatively lower than a temperature in a heating process.

    Abstract translation: 在形成外延层的方法中，可以从第一区域中的第一反应气体产生第一等离子体。 可以将第一等离子体施加到提供给从第一区域分离的第二区域的第二反应气体，以从第二反应气体产生第二等离子体。 阻挡气体可以朝向基板的边缘注入第二区域，以帮助防止第一等离子体和第二等离子体水平扩散。 可以将第一等离子体和第二等离子体施加到衬底以形成外延层。 因此，可以在相对低于加热过程中的温度的温度下形成外延层。

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