公开(公告)号：US20160372642A1

公开(公告)日：2016-12-22

申请号：US15145972

申请日：2016-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuk-jin CHO ,  Dong-hoon LEE

IPC: H01L33/58 ,  H01L33/50 ,  H01L33/48 ,  H01L33/60 ,  H01L33/54 ,  H01L33/62

CPC classification number: H01L33/505 ,  H01L33/486 ,  H01L33/54 ,  H01L33/60 ,  H01L2224/96

Abstract: A light-emitting diode (LED) package includes a light-emitting structure, a transmissive material layer on the light-emitting structure, and a support structure covering at least a portion of a side surface of the transmissive material layer, a side surface of the light-emitting structure, and at least a portion of a bottom surface of the light-emitting structure.

Abstract translation: 发光二极管（LED）封装包括发光结构，发光结构上的透射材料层和覆盖透射材料层的侧表面的至少一部分的支撑结构，侧表面 所述发光结构以及所述发光结构的底面的至少一部分。

公开(公告)号：US20160284927A1

公开(公告)日：2016-09-29

申请号：US15067868

申请日：2016-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuk-jin CHO ,  Kyoung-jun KIM ,  Dong-hoon LEE

IPC: H01L33/00 ,  H01L33/48

CPC classification number: H01L33/005 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/486 ,  H01L2224/16225 ,  H01L2933/0033 ,  H01L2933/005

Abstract: Provided is a method of manufacturing a light-emitting diode (LED) package. The method includes: preparing a support structure on which a plurality of LED chips, each of which includes a semiconductor stack structure, and a light-transmissive material layer covering the plurality of LED chips are formed; mounting the support structure, on which the LED chips and the light-transmissive material layer are formed, on a cutting stage; and cutting the light-transmissive material layer, the semiconductor stack structure, and the support structure between the plurality of LED chips, by using a cutting device having a pattern blade on the cutting stage to singulate each of the individual LED packages.

Abstract translation: 提供一种制造发光二极管（LED）封装的方法。 该方法包括：制备其上包括半导体堆叠结构的多个LED芯片和覆盖多个LED芯片的透光材料层的支撑结构; 在切割台上安装其上形成有LED芯片和透光材料层的支撑结构; 以及通过使用在所述切割台上具有图案刮刀的切割装置来切割所述多个LED芯片之间的所述透光材料层，所述半导体堆叠结构和所述支撑结构，以对所述各个LED封装进行单片化。