公开(公告)号：US20190385860A1

公开(公告)日：2019-12-19

申请号：US16260816

申请日：2019-01-29

Applicant: Samsung Electronics CO., LTD

Inventor： CHEONKYU LEE ,  Moonseok Kim ,  Iksu Byun ,  Changwoo Song ,  Seongha Jeong ,  Dongseok Han

IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32

Abstract: A method of etching at a low temperature includes cooling a pedestal on which a wafer is disposed, etching the wafer by generating plasma from a gas supplied through a gas distribution unit, and injecting a heated inert gas into the chamber through the gas distribution unit.

公开(公告)号：US20220223385A1

公开(公告)日：2022-07-14

申请号：US17466184

申请日：2021-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sejin Oh ,  Iksu Byun ,  Taemin Earmme ,  Jongwoo Sun ,  Jewoo Han

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/311

Abstract: A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.

公开(公告)号：US11929239B2

公开(公告)日：2024-03-12

申请号：US17466184

申请日：2021-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sejin Oh ,  Iksu Byun ,  Taemin Earmme ,  Jongwoo Sun ,  Jewoo Han

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01J37/32642 ,  H01J37/32174 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/31116 ,  H01L21/6833 ,  H01L21/68735 ,  H01J2237/334

Abstract: A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.

公开(公告)号：US10818503B2

公开(公告)日：2020-10-27

申请号：US16260816

申请日：2019-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Cheonkyu Lee ,  Moonseok Kim ,  Iksu Byun ,  Changwoo Song ,  Seongha Jeong ,  Dongseok Han

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311

Abstract: A method of etching at a low temperature includes cooling a pedestal on which a wafer is disposed, etching the wafer by generating plasma from a gas supplied through a gas distribution unit, and injecting a heated inert gas into the chamber through the gas distribution unit.