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公开(公告)号：US11471996B2
公开(公告)日：2022-10-18
申请号：US16662439
申请日：2019-10-24
发明人： Seungchul Han , Yonghee Lee , Taemin Earmme , Byoungho Kwon , Kuntack Lee
IPC分类号： B24B37/005 , B24B37/20
摘要： A conditioner of a chemical mechanical polishing (CMP) apparatus includes a disk to polish a polishing pad of the CMP apparatus, a driver to rotate the disk, a lifter to lift the driver, an arm to rotate the lifter, and a connector to connect the driver to the lifter, the driver being tiltable with respect to the lifter.
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2.发明申请公开(公告)号：US20220165550A1
公开(公告)日：2022-05-26
申请号：US17397530
申请日：2021-08-09
发明人： Kyoungchon Kim , Taemin Earmme , Kwangnam Kim , Jongwoo Sun
IPC分类号： H01J37/32 , H01L21/683 , H01L21/3065
摘要： A plasma processing apparatus includes a substrate chuck having a first region configured to support a substrate and a second region located at a lower level, a focus ring disposed on the second region and surrounding an outer circumferential surface of the first region, a driving unit disposed below the focus ring, the driving unit including a driving source and a driving shaft in contact with a lower surface of the focus ring and configured to adjust a position of an upper surface of the focus ring by a first distance value, a chromatic confocal sensor disposed below the focus ring and configured to measure a second distance value in which the lower surface of the focus ring is moved by irradiating measurement light to the lower surface of the focus ring, and a control unit calculating an error value between the first distance value and the second distance value.
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公开(公告)号：US12068140B2
公开(公告)日：2024-08-20
申请号：US17372131
申请日：2021-07-09
发明人： Sejin Oh , Taemin Earmme , Eunwoo Lee , Jongwoo Sun
IPC分类号： H01J37/32 , H01J37/244 , H01L21/66 , H01L21/683 , H01L21/687
CPC分类号： H01J37/32642 , H01J37/244 , H01J37/32183 , H01J37/32715 , H01L22/20 , H01J2237/2007 , H01J2237/24564 , H01J2237/334 , H01L21/6831 , H01L21/68735
摘要： A method of monitoring a substrate processing apparatus includes applying a high-frequency radio frequency (RF) power signal and a low-frequency RF power signal from a bias power supply apparatus to an electrostatic chuck of a process chamber through a matching circuit. The method further includes applying a direct current (DC) power signal from a DC power supply apparatus to an edge ring of the process chamber through a high-frequency filter and a low-frequency filter. The method further includes measuring a low-frequency RF voltage value at a first point between the matching circuit and the electrostatic chuck, measuring the low-frequency RF voltage value at a second point between the high-frequency filter and the low-frequency filter, and acquiring a voltage ratio between the low-frequency RF voltage value at the first point and the low-frequency RF voltage value at the second point. The method further includes monitoring a state of the edge ring by comparing a threshold with the voltage ratio.
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公开(公告)号：US11929239B2
公开(公告)日：2024-03-12
申请号：US17466184
申请日：2021-09-03
发明人： Sejin Oh , Iksu Byun , Taemin Earmme , Jongwoo Sun , Jewoo Han
IPC分类号： H01J37/32 , H01L21/311 , H01L21/683 , H01L21/687
CPC分类号： H01J37/32642 , H01J37/32174 , H01J37/3255 , H01J37/32568 , H01J37/32715 , H01L21/31116 , H01L21/6833 , H01L21/68735 , H01J2237/334
摘要： A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.
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公开(公告)号：US11984297B2
公开(公告)日：2024-05-14
申请号：US17711181
申请日：2022-04-01
发明人： Sejin Oh , Youngdo Kim , Sanghun Kim , Sungyeol Kim , Younghwan Kim , Taemin Earmme , Changyun Lee , Sunghun Jang
IPC分类号： H01J37/32 , H01L21/311
CPC分类号： H01J37/32183 , H01J37/32165 , H01J37/32568 , H01L21/31116 , H01J2237/334
摘要： A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.
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公开(公告)号：US20220223385A1
公开(公告)日：2022-07-14
申请号：US17466184
申请日：2021-09-03
发明人： Sejin Oh , Iksu Byun , Taemin Earmme , Jongwoo Sun , Jewoo Han
IPC分类号： H01J37/32 , H01L21/683 , H01L21/311
摘要： A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.
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公开(公告)号：US20240162096A1
公开(公告)日：2024-05-16
申请号：US18416585
申请日：2024-01-18
发明人： Seongkeun Cho , Eunhee Jeang , Jihun Lee , Gyumin Jeong , Hyunjae Kang , Taemin Earmme
IPC分类号： H01L21/66 , H01L21/311
CPC分类号： H01L22/12 , H01L21/31144
摘要： A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.
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公开(公告)号：US20230117953A1
公开(公告)日：2023-04-20
申请号：US17877439
申请日：2022-07-29
发明人： Sejin OH , Youngdo Kim , Sanghun Kim , Sungyeol Kim , Sangki Nam , Taemin Earmme , Changyun Lee , Seongmoon Ha
IPC分类号： H01J37/32
摘要： A plasma generator may include a dielectric tube, an inner helical coil surrounding the dielectric tube and configured to generate plasma by forming a stationary wave of at least one of a magnetic field and an electromagnetic wave in the dielectric tube, a variable capacitor configuring a closed loop with the inner helical coil, an outer helical coil surrounding the inner helical coil and magnetically coupled to the inner helical coil, and a radio frequency (RF) power supply configured to provide RF power at a variable frequency to the inner helical coil.
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公开(公告)号：US11605551B2
公开(公告)日：2023-03-14
申请号：US17408437
申请日：2021-08-22
发明人： Youngjae Son , Guesuk Lee , Taemin Earmme , Hyeongyun Lee , Seungchul Han
IPC分类号： H01L21/683 , H01L21/67
摘要： Disclosed are chuck assemblies, semiconductor device fabricating apparatuses, and methods of fabricating semiconductor devices. The chuck assembly comprises a chuck base including lower and upper bases, a ceramic plate on the upper base, an edge ring that surrounds the ceramic plate, a ground ring that surrounds an outer sidewall of the edge ring on an edge portion of the lower base, a coupling ring between the ground ring and the upper base and between the edge ring and the edge portion of the lower base, an upper heat sink between the coupling ring and the edge ring, and a sidewall heat sink between the coupling ring and the ground ring and between the coupling ring and the upper base.
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10.发明授权公开(公告)号：US11027394B2
公开(公告)日：2021-06-08
申请号：US16022166
申请日：2018-06-28
发明人： Jieun Yang , Dong-il Yoon , Taemin Earmme , Gui Hyun Cho , Seok Heo , Jong Hwi Seo , Yong Won Choi
IPC分类号： B24B37/34 , B24B37/005 , H01L21/687 , H01L21/67
摘要： Provided is a load cup including a cup having an internal space, a pedestal provided in the internal space, able to be lifted up and down, and loading a wafer onto or unloading a wafer from a polishing head, and a plurality of arrangement parts having a plurality of fastening portions disposed around the pedestal, and moved horizontally in a direction of a center of the pedestal, and arrangement part bodies coupled to the plurality of fastening portions, respectively, and rotated or reciprocated so as to contact a lateral surface of the polishing head, adjusting a center of the wafer to be aligned with a center of the polishing head. A polishing process may then be performed on a layer formed on the wafer.
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