公开(公告)号：US20230352310A1

公开(公告)日：2023-11-02

申请号：US18190300

申请日：2023-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yearin Byun ,  In Kwon Kim ,  Sang Kyun Kim ,  Hyo San Lee

IPC: H01L21/02 ,  H01L21/3105 ,  C09G1/02 ,  H01L21/321

CPC classification number: H01L21/31055 ,  C09G1/02 ,  H01L21/02052 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/3212

Abstract: A chemical mechanical polishing method may include polishing a polishing object at a first temperature using a chemical mechanical polishing slurry; and removing the chemical mechanical polishing slurry on the polishing object at a second temperature different from the first temperature. The chemical mechanical polishing slurry may include abrasive particles, a thermoresponsive inhibitor, and deionized water. The thermoresponsive inhibitor may include a thermoresponsive polymer exhibiting a phase-transition between the first temperature and the second temperature. The thermoresponsive polymer may be adsorbed to the hydrophobic layer at the first temperature and desorbed from the hydrophobic layer at the second temperature.

公开(公告)号：US20230211456A1

公开(公告)日：2023-07-06

申请号：US18066510

申请日：2022-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yea Rin Byun ,  In Kwon Kim ,  Bo Yun Kim ,  Sang Kyun Kim ,  Bo Un Yoon ,  Hyo San Lee ,  Byung Keun Hwang

IPC: B24B37/24

CPC classification number: B24B37/24

Abstract: A polishing pad for chemical mechanical polishing includes a polymer matrix and a temperature sensitive agent dispersed in the polymer matrix and constituting 1 to 40% by volume of the polishing pad, wherein the temperature sensitive agent includes a two-dimensional (2D) sheet material having a thermal conductivity of 1 W/(m·K) or more.