公开(公告)号：US11721601B2

公开(公告)日：2023-08-08

申请号：US17095210

申请日：2020-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeongmun Kang ,  Jungmin Ko ,  Seungduk Baek ,  Taehyeong Kim ,  Insup Shin

IPC: H01L23/24 ,  H01L23/31 ,  H01L21/56 ,  H01L23/538 ,  H01L23/00

CPC classification number: H01L23/24 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/5385 ,  H01L24/13 ,  H01L2924/1434 ,  H01L2924/3511

Abstract: A semiconductor package includes a substrate, a plurality of semiconductor devices stacked on the substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the substrate and the plurality of semiconductor devices, and molding resin surrounding the plurality of semiconductor devices. At least one of the underfill fillets is exposed from side surfaces of the molding resin.

公开(公告)号：US10361177B2

公开(公告)日：2019-07-23

申请号：US15960698

申请日：2018-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-Young Kim ,  Pyoungwan Kim ,  Hyunki Kim ,  Junwoo Park ,  Sangsoo Kim ,  Seung Hwan Kim ,  Sung-Kyu Park ,  Insup Shin

IPC: H01L21/56 ,  H01L25/00 ,  H01L25/10 ,  H01L25/11

Abstract: Disclosed are a semiconductor package and a method of fabricating the same. The semiconductor package comprises a lower semiconductor chip on a lower substrate, a lower molding layer covering the lower semiconductor chip on the lower substrate and including a molding cavity that extends toward the lower semiconductor chip from a top surface of the lower molding layer, an interposer substrate on the top surface of the lower molding layer and including a substrate opening that penetrates the interposer substrate and overlaps the molding cavity, and an upper package on the interposer substrate. The molding cavity has a floor surface spaced apart from the upper package across a substantially hollow space.

公开(公告)号：US12230575B2

公开(公告)日：2025-02-18

申请号：US17517798

申请日：2021-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeongmun Kang ,  Woodong Lee ,  Insup Shin ,  Youngwoo Lim

IPC: H01L23/538 ,  H01L25/065

Abstract: A carrier structure including semiconductor chip stack structures; and a carrier tape including a plurality of pockets respectively accommodating the semiconductor chip stack structures, wherein each of the plurality of pockets includes a bottom surface, first sidewalls in four corner regions of each of the plurality of pockets, and second sidewalls between adjacent first sidewalls, each of the first sidewalls has a first portion having a first inclination angle and a second portion on the first portion and having a second inclination angle, the second inclination angle being greater than the first inclination angle, and vertices of lower surfaces of the semiconductor chip stack structures are in contact with the first sidewalls.

公开(公告)号：US11756935B2

公开(公告)日：2023-09-12

申请号：US17352757

申请日：2021-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Insup Shin ,  Hyeongmun Kang ,  Jungmin Ko ,  Hwanyoung Choi

IPC: H01L25/065 ,  H01L25/18 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/06586

Abstract: A chip-stacked semiconductor package includes: a base chip having a base through via; a first chip stacked on the base chip in an offset form, wherein the first chip has a first exposed surface and a first through via electrically connected to the base through via; a first molding layer positioned on the base chip and covering a first non-exposed surface, facing the first exposed surface, of the first chip; a second chip stacked on the first chip in an offset form, wherein the second chip has a second exposed surface and a second through via electrically connected to the first through via; and a second molding layer formed on the first chip and covering a second non-exposed surface, facing the second exposed surface, of the second chip.