公开(公告)号：US20180019392A1

公开(公告)日：2018-01-18

申请号：US15451961

申请日：2017-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwoo LEE ,  Jeonghee PARK ,  Dongho AHN ,  Zhe WU ,  Heeju SHIN ,  Ja bin LEE

IPC: H01L45/00 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L45/141 ,  H01L43/08 ,  H01L43/10 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/16

Abstract: A semiconductor memory device including first lines and second lines overlapping and intersecting each other, variable resistance memory elements disposed at intersections between the first lines and the second lines, and switching elements disposed between the variable resistance memory elements and the first lines. At least one of the switching elements includes first and second chalcogenide compound layers, and conductive nano-dots disposed between the first and second chalcogenide compound layers.

公开(公告)号：US20180019281A1

公开(公告)日：2018-01-18

申请号：US15454064

申请日：2017-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ja bin LEE ,  Jeonghee Park ,  Dongho Ahn ,  Zhe Wu ,  Heeju Shin ,  Jinwoo Lee

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2427 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1625

Abstract: A variable resistance memory device may include separate memory cells between separate vertical intersections of first conductive lines extending in a first direction and second conductive lines extending in a second direction intersecting the first direction. A memory cell may include a switching element and a variable resistance structure coupled in series between a first conductive line and a second conductive line. The switching element may include at least one insulative impurity and a chalcogenide material. The variable resistance structure may reversibly switch phases, between a crystalline state and an amorphous state, at a first phase transition temperature, and the switching element may reversibly switch phases, between a crystalline state and an amorphous state, at a second phase transition temperature, where the second phase transition temperature is greater than the first phase transition temperature.