公开(公告)号：US20230102791A1

公开(公告)日：2023-03-30

申请号：US17740494

申请日：2022-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Ho JANG ,  Min Hwan SEO ,  Jang Hwi LEE ,  Young Chul KWON ,  Sang Woo BAE ,  Akinori OKUBO ,  Jung Chul LEE ,  Won Don JOO

IPC: B23K26/53 ,  B23K26/38 ,  B23K26/03

Abstract: A method for dicing a substrate includes setting a target height for forming a first reforming region inside a target substrate, the target height being a distance from an upper surface of the target substrate to the first reforming region; irradiating a laser beam to a first sample substrate including a first film and a second film being in contact with the first film, and setting a target condition on the basis of a sample condition that results in forming a condensing point of the laser beam on an upper surface of the first film being in contact with the second film; and irradiating the target substrate with the laser beam according to the target condition to form the first reforming region inside the target substrate, wherein a thickness of the second film is the target height.

公开(公告)号：US20240234177A1

公开(公告)日：2024-07-11

申请号：US18495224

申请日：2023-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hun Yong PARK ,  Yeon Tae KIM ,  Jang Hwi LEE ,  Sang Woo BAE ,  Kyung Su KIM ,  Tae Soon PARK ,  Jung Chul LEE ,  Sung Ho JANG ,  Won Don JOO

IPC: H01L21/67 ,  C23C16/44 ,  C23C16/452 ,  H01L21/02

CPC classification number: H01L21/67115 ,  C23C16/4412 ,  C23C16/452 ,  H01L21/0228

Abstract: A wafer processing apparatus may include a chamber providing an internal space; and a first rib on an outer side of a first sidewall of the chamber. An outer side of the first rib may include a first portion and a second portion. A light transmittance of the first portion may be different from a light transmittance of the second portion.