公开(公告)号：US20240234177A1

公开(公告)日：2024-07-11

申请号：US18495224

申请日：2023-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hun Yong PARK ,  Yeon Tae KIM ,  Jang Hwi LEE ,  Sang Woo BAE ,  Kyung Su KIM ,  Tae Soon PARK ,  Jung Chul LEE ,  Sung Ho JANG ,  Won Don JOO

IPC: H01L21/67 ,  C23C16/44 ,  C23C16/452 ,  H01L21/02

CPC classification number: H01L21/67115 ,  C23C16/4412 ,  C23C16/452 ,  H01L21/0228

Abstract: A wafer processing apparatus may include a chamber providing an internal space; and a first rib on an outer side of a first sidewall of the chamber. An outer side of the first rib may include a first portion and a second portion. A light transmittance of the first portion may be different from a light transmittance of the second portion.

公开(公告)号：US20210388501A1

公开(公告)日：2021-12-16

申请号：US17155672

申请日：2021-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Uk CHOI ,  Yeon Tae KIM ,  Tae Soon PARK ,  Kee Soo PARK ,  Sung-Gyu PARK ,  Kwang-Hyun YANG ,  Seung Hun LEE

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/44 ,  H01L21/203

Abstract: The present disclosure provides a semiconductor deposition monitoring device comprising a supporting table, a chamber, a lamp, an optical sensor, a conduit, a plurality of sensors in the conduit, and a heat exchanger. The supporting table supports a deposition target wafer on which a deposition material is deposited. The chamber comprises an upper dome and a lower dome. The lamp emits light to the chamber. The optical sensor receives the irradiated light and measures the deposition material formed in the chamber. The conduit has an inlet conduit through which air is injected into the chamber and an outlet conduit through which the air is discharged from the chamber. The plurality of sensors sense information of the air. The sensed information may be used to control the heat exchanger.

公开(公告)号：US20240266148A1

公开(公告)日：2024-08-08

申请号：US18416990

申请日：2024-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Su LEE ,  Yeon Tae KIM ,  Yon Joo KANG ,  Yi Hwan KIM ,  Won Ki LEE ,  Hyeon Jin JEON ,  Hyeong Un JEON

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/32724 ,  H01J2237/3343

Abstract: A semiconductor manufacturing device comprising a support unit in a chamber. A showerhead disposed between first and second plasma regions. First and second gas supply units injecting first and second process gases, respectively, into the second plasma region through the showerhead. The showerhead includes plasma penetration portions passing a portion of the plasma generated in the first plasma region therethrough. First gas flow paths injecting the first process gas into a first zone of the showerhead. Second gas flow paths injecting the second process gas into a second zone of the showerhead that surrounds the first zone. First and second cavities connected to the first and second gas flow paths, respectively. The first and second cavities diffusing the first and second process gases, respectively. First and second gas spraying holes connected to the first and second cavities, respectively, and facing the second plasma region.

公开(公告)号：US20140238302A1

公开(公告)日：2014-08-28

申请号：US14182407

申请日：2014-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hyun KIM ,  Yeon Tae KIM ,  Nam Jin CHO

IPC: C23C16/52

CPC classification number: C23C16/52 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/4557 ,  C23C16/46

Abstract: An atomic layer deposition apparatus including a substrate loading unit provided in a process chamber, the substrate loading unit including at least one substrate loading plate on which a substrate is to be loaded, an injector assembly coupled to the process chamber and configured to supply a plurality of reactants to deposit a multilayer film onto the substrate while sweeping over the substrate loaded on the substrate loading plate, a plurality of first heat sources configured to heat in a non-contact manner, and, a plurality of second heat sources configured to heat in a contact manner, the first and second heat sources at different positions in the process chamber may be provided.

Abstract translation: 一种原子层沉积设备，包括设置在处理室中的基板装载单元，所述基板装载单元包括至少一个基板装载板，基板装载在该至少一个基板装载板上;喷射器组件，其耦合到处理室并被配置为提供多个 的反应物将多层膜沉积在衬底上，同时扫过装载在衬底装载板上的衬底，多个构造成以非接触方式加热的第一热源，以及多个构造成在 可以提供接触方式，处理室中不同位置处的第一和第二热源。

公开(公告)号：US20240019311A1

公开(公告)日：2024-01-18

申请号：US18198482

申请日：2023-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeon Tae KIM ,  Hun Yong PARK ,  Yihwan KIM ,  Ji Hoon KIM ,  Kee Soo PARK

IPC: G01K1/02 ,  G01K11/12 ,  G01J5/00 ,  G01J5/0801 ,  G01J5/53

CPC classification number: G01K1/026 ,  G01K11/12 ,  G01J5/0003 ,  G01J5/0801 ,  G01J5/53

Abstract: A substrate temperature measuring device includes a sensor which senses a first amount of light of a first light having a first wavelength, a second amount of light of a second light having a second wavelength, and a third amount of light of a third light having a third wavelength provided from a substrate, a first calculator to calculate a first temperature for the first wavelength, a second temperature for the second wavelength, and a third temperature of the wavelength through the first amount of light, the second amount of light and the third amount of light which are sensed, and a second calculator to calculate emissivity of the substrate and reflected energy of the substrate through the first temperature, the second temperature, and the third temperature, wherein a temperature of the substrate is calculated through the calculated emissivity of the substrate and the reflected energy of the substrate.