公开(公告)号：US20150137325A1

公开(公告)日：2015-05-21

申请号：US14329749

申请日：2014-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yi-Koan HONG ,  Byung-Lyul PARK ,  Ji-Soon PARK ,  Si-Young CHOI

IPC: H01L23/00 ,  H01L23/528 ,  H01L23/522

CPC classification number: H01L23/528 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/08146 ,  H01L2224/80894 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/00 ,  H01L2224/80001 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Provided is a semiconductor device. The semiconductor device includes a passivation layer defining a metal pattern on a first surface of a substrate, an inter-layer insulating layer disposed on a second surface of the substrate, and a piezoelectric pattern formed between the metal pattern and the passivation layer on the first surface of the substrate. A through-silicon-via and/or a pad can be directly bonded to another through-silicon-via and/or another pad by applying pressure only, and without performing a heat process.

Abstract translation: 提供一种半导体器件。 半导体器件包括在衬底的第一表面上限定金属图案的钝化层，设置在衬底的第二表面上的层间绝缘层，以及形成在金属图案和第一钝化层之间的压电图案 基板的表面。 通过硅通孔和/或焊盘可以仅通过施加压力而不进行热处理直接结合到另一个通硅通孔和/或另一焊盘。

公开(公告)号：US20140145327A1

公开(公告)日：2014-05-29

申请号：US14060913

申请日：2013-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyung-Jun JEON ,  Jae-Hyun PHEE ,  Byung-Lyul PARK ,  Ji-Soon PARK ,  Jeong-Gi JIN

IPC: H01L23/00

CPC classification number: H01L24/03 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/03019 ,  H01L2224/0345 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05558 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/10125 ,  H01L2224/10126 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/11618 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11902 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13311 ,  H01L2224/1401 ,  H01L2224/81191 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2224/05147 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2224/13111

Abstract: Semiconductor devices and methods for fabricating the same are provided. For example, the semiconductor device includes a substrate, a first contact pad formed on the substrate, an insulation layer formed on the substrate and including a first opening which exposes the first contact pad, a first bump formed on the first contact pad and electrically connected to the first contact pad, and a reinforcement member formed on the insulation layer and adjacent to a side surface of the first lower bump. The first bump includes a first lower bump and a first upper bump, which are sequentially stacked on the first contact pad.

Abstract translation: 提供半导体器件及其制造方法。 例如，半导体器件包括衬底，形成在衬底上的第一接触焊盘，形成在衬底上并包括暴露第一接触焊盘的第一开口的绝缘层，形成在第一接触焊盘上的电连接 到所述第一接触垫，以及形成在所述绝缘层上并且与所述第一下凸块的侧表面相邻的加强构件。 第一凸块包括顺序堆叠在第一接触垫上的第一下凸块和第一上凸块。