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公开(公告)号：US20240191419A1
公开(公告)日：2024-06-13
申请号：US18382897
申请日：2023-10-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Unyong LEE , Myungbae BANG , Myunggui CHOI , Jonggu KIM , Jinhyung PARK
CPC classification number: D06F37/304 , H02K1/18 , H02K5/225 , H02K7/083 , H02K2213/03
Abstract: An apparatus including a motor including a stator including a core, a rotor inside the stator, and rotatable by interacting with the stator, and a rotation shaft mounted on the rotor so as to be rotatable together with the rotor, and a bracket including a main body unit including a space in which the stator is mounted, a front mount at a front of the main body unit, and including a front fastening hole, and a rear mount at a rear of the main body unit, and including a rear fastening hole.
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公开(公告)号：US20220038216A1
公开(公告)日：2022-02-03
申请号：US17503673
申请日：2021-10-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gupil CHEONG , Doosu NA , Jinhyung PARK , Heejae YOON , Sungjun CHOI , Doosuk KANG
Abstract: An electronic device comprises: a wireless communication circuitry configured to support a Bluetooth protocol, wherein the wireless communication circuitry can be configured to: transmit an IAC-based ID packet for a communication connection with an external electronic device, receive, from the external electronic device, an FHS packet corresponding to the ID packet, identify whether an EIR field included in the FHS packet indicates the transmission of an EIR packet, identify whether a reserved field included in the FHS packet indicates the retransmission of the EIR packet based on the EIR field indicating the transmission of the EIR packet, receive the EIR packet from the external electronic device, and transmit, to the external electronic device, an ACK signal for the reception of the EIR packet in response to the reception of the EIR packet.
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公开(公告)号：US20240381616A1
公开(公告)日：2024-11-14
申请号：US18636744
申请日：2024-04-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seongkeun CHO , Suhwan HWANG , Kanguk KIM , Yihwan KIM , Jihoon KIM , Jinhyung PARK , Hyunsu SHIN , Taemin EARMME , Sungwook JUNG
IPC: H10B12/00
Abstract: A method may include forming a first gate structure on a first region of a substrate, forming a bit line structure on the first gate structure, forming a preliminary contact plug layer including amorphous silicon on the substrate, forming a reflective layer structure on the preliminary contact plug layer, forming a contact plug layer from the preliminary contact plug layer, and forming a capacitor on the contact plug layer. The reflective layer structure may include first and second reflective layers. A refractive index of the second reflective layer may be being greater than that of the first reflective layer. Portions of the second reflective layer may have different thicknesses on first and second regions of the substrate. The forming the contact plug layer may include performing a melting laser annealing (MLA) process on the reflective layer structure to convert the amorphous silicon of the preliminary contact plug layer into polysilicon.
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公开(公告)号：US20220068810A1
公开(公告)日：2022-03-03
申请号：US17221191
申请日：2021-04-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seonghun LIM , Wookyung YOU , Kyoungwoo LEE , Juyoung JUNG , Il Sup KIM , Chin KIM , Kyoungpil PARK , Jinhyung PARK
IPC: H01L23/522 , H01L23/528 , H01L27/06
Abstract: A semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer; and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.
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