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    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20240381616A1

    公开(公告)日：2024-11-14

    申请号：US18636744

    申请日：2024-04-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seongkeun CHO ,  Suhwan HWANG ,  Kanguk KIM ,  Yihwan KIM ,  Jihoon KIM ,  Jinhyung PARK ,  Hyunsu SHIN ,  Taemin EARMME ,  Sungwook JUNG

    IPC: H10B12/00

    Abstract: A method may include forming a first gate structure on a first region of a substrate, forming a bit line structure on the first gate structure, forming a preliminary contact plug layer including amorphous silicon on the substrate, forming a reflective layer structure on the preliminary contact plug layer, forming a contact plug layer from the preliminary contact plug layer, and forming a capacitor on the contact plug layer. The reflective layer structure may include first and second reflective layers. A refractive index of the second reflective layer may be being greater than that of the first reflective layer. Portions of the second reflective layer may have different thicknesses on first and second regions of the substrate. The forming the contact plug layer may include performing a melting laser annealing (MLA) process on the reflective layer structure to convert the amorphous silicon of the preliminary contact plug layer into polysilicon.

    ROTARY BODY MODULE AND CHEMICAL MECHANICAL POLISHING APPARATUS HAVING THE SAME
    3.
    发明申请
    ROTARY BODY MODULE AND CHEMICAL MECHANICAL POLISHING APPARATUS HAVING THE SAME 有权

    公开(公告)号：US20210008686A1

    公开(公告)日：2021-01-14

    申请号：US16747034

    申请日：2020-01-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yonghee LEE ,  Yungjun KIM ,  Hyunjoon PARK ,  Taemin EARMME ,  Seungchul HAN ,  Byoungho KWON ,  Kuntack LEE

    IPC: B24B37/20 ,  B24B37/005

    Abstract: A chemical mechanical polishing apparatus includes a fixing portion; and a rotary body module including a rotating shaft rotatably installed on the fixing portion, a first rotating unit connected to the rotating shaft and on which a wafer is mounted, and a second rotating unit disposed around the first rotating unit and on which a retainer ring is mounted, wherein the fixing portion comprises a first driving member disposed above the first rotating unit and a second driving member disposed above the second rotating unit, wherein the first and second driving members are comprised of a magnet or an electromagnet, wherein a first magnet, disposed opposite to the first driving member, is provided in the first rotating unit, and a second magnet, disposed opposite to the second driving member, is provided in the second rotating unit, and wherein the first rotating unit and the second rotating unit are independently tilted.

    PLASMA CONTROL DEVICE AND PLASMA PROCESSING SYSTEM
    5.
    发明申请
    PLASMA CONTROL DEVICE AND PLASMA PROCESSING SYSTEM 有权

    公开(公告)号：US20230091161A1

    公开(公告)日：2023-03-23

    申请号：US17711181

    申请日：2022-04-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sejin OH ,  Youngdo KIM ,  Sanghun KIM ,  Sungyeol KIM ,  Younghwan KIM ,  Taemin EARMME ,  Changyun LEE ,  Sunghun JANG

    IPC: H01J37/32 ,  H01L21/311

    Abstract: A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.

    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220199473A1

    公开(公告)日：2022-06-23

    申请号：US17386323

    申请日：2021-07-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seongkeun CHO ,  Eunhee JEANG ,  Jihun LEE ,  Gyumin JEONG ,  Hyunjae KANG ,  Taemin EARMME

    IPC: H01L21/66 ,  H01L21/311

    Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

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