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Patent Agency Ranking
公开(公告)号：US09390805B2
公开(公告)日：2016-07-12
申请号：US14162928
申请日：2014-01-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sungkyu Jo , Jinyub Lee
CPC classification number: G11C16/225 , G11C16/10 , G11C16/30
Abstract: A memory system is provided which includes a nonvolatile memory; and a controller configured to control the nonvolatile memory, wherein the controller comprises a voltage detector configured to detect a level of a power supply voltage; and wherein when a level of the power supply voltage is lower than a first threshold value, the controller issues a reset command to the nonvolatile memory and then performs a reset operation.
Abstract translation: 提供一种包括非易失性存储器的存储器系统; 以及控制器，被配置为控制所述非易失性存储器，其中所述控制器包括被配置为检测电源电压的电平的电压检测器; 并且其中当所述电源电压的电平低于第一阈值时，所述控制器向所述非易失性存储器发出复位命令，然后执行复位操作。
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2.发明授权公开(公告)号：US09437317B2
公开(公告)日：2016-09-06
申请号：US14835230
申请日：2015-08-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： TaeHyun Kim , June-Hong Park , Sungwhan Seo , Jinyub Lee
CPC classification number: G11C16/30 , G11C16/0483 , G11C16/12
Abstract: An external power control method includes determining whether to apply a second external voltage to a first node according to a drop of a first external voltage; generating a flag signal according to a drop of the second external voltage when the second external voltage is applied to the first node; transferring a voltage of the first node to a second node in response to the flag signal; and discharging at least one voltage of an internal circuit connected to the second node in response to the flag signal.
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3.发明授权Nonvolatile memory device, memory system having the same, external power controlling method thereof 有权非易失性存储器件，具有相同的存储器系统，其外部功率控制方法公开(公告)号：US09147488B2
公开(公告)日：2015-09-29
申请号：US14061019
申请日：2013-10-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： TaeHyun Kim , June-Hong Park , Sungwhan Seo , Jinyub Lee
CPC classification number: G11C16/30 , G11C16/0483 , G11C16/12
Abstract: An external power control method includes determining whether to apply a second external voltage to a first node according to a drop of a first external voltage; generating a flag signal according to a drop of the second external voltage when the second external voltage is applied to the first node; transferring a voltage of the first node to a second node in response to the flag signal; and discharging at least one voltage of an internal circuit connected to the second node in response to the flag signal.
Abstract translation: 外部功率控制方法包括根据第一外部电压的下降来确定是否向第一节点施加第二外部电压; 当第二外部电压施加到第一节点时，根据第二外部电压的下降产生标志信号; 响应于所述标志信号将所述第一节点的电压传送到第二节点; 以及响应于所述标志信号，放电连接到所述第二节点的内部电路的至少一个电压。
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4.发明授权Nonvolatile memory, reading method of nonvolatile memory, and memory system including nonvolatile memory 有权非易失性存储器，非易失性存储器的读取方法和包括非易失性存储器的存储器系统公开(公告)号：US09086996B2
公开(公告)日：2015-07-21
申请号：US13941568
申请日：2013-07-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seungjae Lee , Jinyub Lee
CPC classification number: G06F12/14 , G06F12/1433 , G06F21/78 , G06F21/79 , G06F2212/202
Abstract: A nonvolatile memory device includes a memory cell array and a read/write circuit connected to the memory cell array through bit lines. The read method of the nonvolatile memory device includes receiving a security read request, receiving security information, and executing a security read operation in response to the security read request. The security read operation includes reading of security data from the memory cell array using the read/write circuit, storing of the read security data in a register, performing security decoding on the read security data stored in the register using the received security information, resetting the read/write circuit, and outputting a result of the security decoding.
Abstract translation: 非易失性存储器件包括存储单元阵列和通过位线连接到存储单元阵列的读/写电路。 非易失性存储器件的读取方法包括接收安全读取请求，接收安全信息，以及响应于安全读取请求执行安全读取操作。 安全读取操作包括使用读/写电路从存储单元阵列读取安全数据，将读取的安全数据存储在寄存器中，使用接收到的安全信息对存储在寄存器中的读取的安全数据执行安全解码，重置 读/写电路，并输出安全解码的结果。
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公开(公告)号：US20140223085A1
公开(公告)日：2014-08-07
申请号：US14162928
申请日：2014-01-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sungkyu Jo , Jinyub Lee
IPC: G06F12/02
CPC classification number: G11C16/225 , G11C16/10 , G11C16/30
Abstract: A memory system is provided which includes a nonvolatile memory; and a controller configured to control the nonvolatile memory, wherein the controller comprises a voltage detector configured to detect a level of a power supply voltage; and wherein when a level of the power supply voltage is lower than a first threshold value, the controller issues a reset command to the nonvolatile memory and then performs a reset operation.
Abstract translation: 提供一种包括非易失性存储器的存储器系统; 以及控制器，被配置为控制所述非易失性存储器，其中所述控制器包括被配置为检测电源电压的电平的电压检测器; 并且其中当所述电源电压的电平低于第一阈值时，所述控制器向所述非易失性存储器发出复位命令，然后执行复位操作。
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