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    METHOD OF PREPARING FURFURAL COMPOUNDS
    1.
    发明申请
    METHOD OF PREPARING FURFURAL COMPOUNDS 有权
    制备糠醛化合物的方法

    公开(公告)号：US20140128625A1

    公开(公告)日：2014-05-08

    申请号：US14066541

    申请日：2013-10-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong Min LEE ,  Hyeon Su HEO ,  Moo Ho LEE ,  Kyung Hae LEE

    IPC: C07D307/46

    CPC classification number: C07D307/46 ,  C07D307/48 ,  C07D307/50

    Abstract: Provided is a two-step method of producing a compound of chemical formula 1 in the presence of an alcohol solvent and a Group 3B metal catalyst or a salt thereof, comprising a first step comprising alkylation or isomerization of an aldohexose-containing substrate to obtain an intermediate, and a second step comprising dehydration of the intermediate to produce a compound of chemical formula 1. Preferably, additional solvent and/or catalyst are not added in the second step.

    Abstract translation: 本发明提供了在醇溶剂和3B族金属催化剂或其盐的存在下制备化学式1的化合物的两步法，该方法包括第一步骤，包括含醛糖基底物的烷基化或异构化以获得 中间体和第二步，包括中间体的脱水以产生化学式1的化合物。优选在第二步中不加入另外的溶剂和/或催化剂。

    SEMICONDUCTOR MEMORY DEVICE WITH BURIED CONTACTS AND A FENCE
    2.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE WITH BURIED CONTACTS AND A FENCE 有权

    公开(公告)号：US20220262803A1

    公开(公告)日：2022-08-18

    申请号：US17493671

    申请日：2021-10-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyeon Woo JANG ,  Soo Ho SHIN ,  Dong Sik PARK ,  Jong Min LEE ,  Ji Hoon CHANG

    IPC: H01L27/108

    Abstract: The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device comprises a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.

    SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
    3.
    发明申请
    SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD 有权

    公开(公告)号：US20250095974A1

    公开(公告)日：2025-03-20

    申请号：US18767424

    申请日：2024-07-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yongseok LEE ,  Jong Min LEE ,  Taekyoon PARK ,  Chae Sun KIM ,  Hae Rang ROH

    IPC: H01J37/32 ,  G01N21/27 ,  H01L21/67

    Abstract: A substrate processing method includes collecting a plurality of pieces of optical emission spectrometry data including a wavelength, intensity of the wavelength, and time using optical emission spectrometry on a plurality of substrates, selecting a selected wavelength band having a high correlation with an endpoint of an etching process from the plurality of pieces of optical emission spectrometry data, preprocessing the plurality of pieces of optical emission spectrometry data to generate a selected dataset, generating a principal component analysis model using the selected dataset, generating a probability distribution model capable of clustering data of the principal component analysis model, and performing the etching process on a process substrate using the principal component analysis model and the probability distribution model.

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