公开(公告)号：US20160049306A1

公开(公告)日：2016-02-18

申请号：US14692330

申请日：2015-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cha-won Koh ,  Hyun-woo Kim ,  Jong-soo Kim ,  Jin Park ,  Hyung-rae Lee

IPC: H01L21/306 ,  H01L21/027 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L21/30604 ,  H01L21/02118 ,  H01L21/02343 ,  H01L21/02345 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

Abstract: The present inventive concept provides methods of manufacturing a semiconductor device including forming an inner mask layer on an etching target film, the inner mask layer including a polymer; forming a porous film on the etching target film, the porous film covering the inner mask layer; supplying an acid source to an outer surface area of the inner mask layer through the porous film; inducing a chemical reaction of the polymer included in the inner mask layer in the outer surface area by using the acid source; forming inner mask patterns by removing a chemically reacted portion of the inner mask layer; and etching the etching target film by using at least a portion of the porous film and the inner mask patterns as an etching mask.

Abstract translation: 本发明构思提供了制造半导体器件的方法，包括在蚀刻靶膜上形成内掩模层，内掩模层包括聚合物; 在所述蚀刻目标膜上形成多孔膜，所述多孔膜覆盖所述内掩模层; 通过多孔膜将酸源供给到内掩模层的外表面区域; 通过使用酸源在外表面区域引起包含在内掩模层中的聚合物的化学反应; 通过去除内部掩模层的化学反应部分形成内部掩模图案; 并且通过使用至少一部分多孔膜和内部掩模图案作为蚀刻掩模来蚀刻蚀刻目标膜。

公开(公告)号：US09300240B2

公开(公告)日：2016-03-29

申请号：US13867563

申请日：2013-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-bae Kim ,  Jong-soo Kim ,  Jei-hoon Baek ,  Kyu-bum Han

IPC: H02P6/00 ,  H02P27/08 ,  H02P27/12 ,  H02P21/12

CPC classification number: H02P27/085 ,  H02P21/12 ,  H02P27/12

Abstract: A method of obtaining a maximum magnetic flux of a permanent magnet synchronous motor may comprise: receiving a first command voltage from a current controller to control current applied to the permanent magnet synchronous motor; receiving an on/off duty ratio of a control pulse signal to control an output voltage of an inverter that drives the permanent magnet synchronous motor, the on/off duty ratio being determined based on the first command voltage; generating a second command voltage corresponding to the output voltage to be output from the inverter based on the on/off duty ratio of the control pulse signal; obtaining a maximum command voltage error by comparing the first and second command voltages; and/or obtaining the maximum command magnetic flux of the permanent magnet synchronous motor according to a position of a rotor of the permanent magnet synchronous motor based on the maximum command voltage error.

Abstract translation: 获得永磁同步电动机的最大磁通量的方法可以包括：从电流控制器接收第一指令电压以控制施加到永磁同步电动机的电流; 接收控制脉冲信号的开/关占空比以控制驱动永磁同步电动机的逆变器的输出电压，基于第一指令电压确定开/关占空比; 基于控制脉冲信号的开/关占空比，产生与从逆变器输出的输出电压对应的第二指令电压; 通过比较第一和第二指令电压来获得最大指令电压误差; 和/或根据最大指令电压误差，根据永磁同步电动机的转子的位置获得永磁同步电动机的最大指令磁通量。

公开(公告)号：US09225282B2

公开(公告)日：2015-12-29

申请号：US13932331

申请日：2013-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jei-hoon Baek ,  Jong-soo Kim ,  Hyun-bae Kim ,  Kyu-bum Han

IPC: H02P23/00 ,  H02P27/08

CPC classification number: H02P27/08 ,  H02P27/085

Abstract: A method of controlling an output voltage of an inverter driving an electric motor may include calculating a current total harmonic distortion (THD) of a current output to the electric motor; comparing the current THD with a reference current THD; determining a pulse width modulation (PWM) method to be changed from a first modulation method that reduces harmonic components of the current output to the electric motor to a second modulation method when the current THD is less than the reference current THD, the PWM method modulating a pulse width of a control pulse signal for controlling the output voltage of the inverter; and/or generating the control pulse signal based on the determined PWM method.

Abstract translation: 控制驱动电动机的逆变器的输出电压的方法可以包括计算输出到电动机的电流的当前总谐波失真（THD）; 将当前THD与参考电流THD进行比较; 当电流THD小于参考电流THD时，确定从第一调制方法改变的脉冲宽度调制（PWM）方法，该第一调制方法将电流输出到电动机的谐波分量减少到第二调制方法，PWM方法调制 用于控制逆变器的输出电压的控制脉冲信号的脉冲宽度; 和/或基于所确定的PWM方法产生控制脉冲信号。

公开(公告)号：US09362841B2

公开(公告)日：2016-06-07

申请号：US13733433

申请日：2013-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jei-hoon Baek ,  Jong-soo Kim ,  Hyun-bae Kim ,  Kyu-bum Han

IPC: H02M7/12 ,  H02P9/00 ,  H02M7/155 ,  H02M1/00

CPC classification number: H02M7/12 ,  H02M7/155 ,  H02M2001/0087 ,  H02P9/00

Abstract: A power conversion apparatus including a current source converter configured to convert Alternate Current (AC) power to Direct Current (DC) power; a power controller configured to set a d-axis current command and a q-axis current command, which correspond to the AC power to the current source converter, by reflecting a difference between a measurement DC link voltage measured at an output terminal of the current source converter and a DC link voltage set by a DC link voltage command; and a phase angle controller configured to adjust a phase angle of the current source converter and transmit the adjusted phase angle to the current source converter, in response to the d-axis current command and the q-axis current command.

Abstract translation: 一种电力转换装置，包括被配置为将交流电（AC）功率转换为直流（DC）功率的电流源转换器; 功率控制器，被配置为通过反映在电流源的输出端测量的测量直流链路电压之间的差异来设定与电流源转换器的AC功率对应的d轴电流指令和q轴电流指令 源转换器和由直流链路电压命令设置的直流链路电压; 以及相位角控制器，被配置为响应于d轴电流指令和q轴电流指令，调整电流源转换器的相位角并且将经调整的相位角传送到电流源转换器。

公开(公告)号：US09806036B2

公开(公告)日：2017-10-31

申请号：US15354320

申请日：2016-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-soo Kim ,  Sam-jong Choi ,  Sue-ryeon Kim ,  Tae-hyoung Koo ,  Hyun-hee Ju ,  Cheong-jun Kim ,  Ji-won You

IPC: H01L21/02 ,  H01L29/06 ,  H01L23/00 ,  H01L21/66 ,  H01L21/324 ,  H01L23/544

CPC classification number: H01L23/562 ,  H01L21/02013 ,  H01L21/02021 ,  H01L21/02035 ,  H01L21/0262 ,  H01L21/324 ,  H01L22/12 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54493

Abstract: A semiconductor wafer including a main body including first and second surfaces opposite each other, a notch including a recess on an outer periphery, a first bevel region formed along the outer periphery of the main body, including a first slope connecting the first and second surfaces and having a first height with respect to a straight line extending from a first point where the first surface and the first slope meet to a second point where the second surface and the first slope meet, and a second bevel region in contact with the recess or opening, including a second slope connecting the first and second surfaces and having a second height, different from the first height, with respect to a straight line extending from a third point where the first surface and the second slope meet to a fourth point where the second surface and the second slope meet.

公开(公告)号：US09412604B2

公开(公告)日：2016-08-09

申请号：US14692330

申请日：2015-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cha-won Koh ,  Hyun-woo Kim ,  Jong-soo Kim ,  Jin Park ,  Hyung-rae Lee

IPC: H01L21/30 ,  H01L21/306 ,  H01L21/308 ,  H01L21/027 ,  H01L21/02

CPC classification number: H01L21/30604 ,  H01L21/02118 ,  H01L21/02343 ,  H01L21/02345 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

Abstract: The present inventive concept provides methods of manufacturing a semiconductor device including forming an inner mask layer on an etching target film, the inner mask layer including a polymer; forming a porous film on the etching target film, the porous film covering the inner mask layer; supplying an acid source to an outer surface area of the inner mask layer through the porous film; inducing a chemical reaction of the polymer included in the inner mask layer in the outer surface area by using the acid source; forming inner mask patterns by removing a chemically reacted portion of the inner mask layer; and etching the etching target film by using at least a portion of the porous film and the inner mask patterns as an etching mask.

Abstract translation: 本发明构思提供了制造半导体器件的方法，包括在蚀刻靶膜上形成内掩模层，内掩模层包括聚合物; 在所述蚀刻目标膜上形成多孔膜，所述多孔膜覆盖所述内掩模层; 通过多孔膜将酸源供给到内掩模层的外表面区域; 通过使用酸源在外表面区域引起包含在内掩模层中的聚合物的化学反应; 通过去除内部掩模层的化学反应部分形成内部掩模图案; 并且通过使用至少一部分多孔膜和内部掩模图案作为蚀刻掩模来蚀刻蚀刻目标膜。