公开(公告)号：US20170200683A1

公开(公告)日：2017-07-13

申请号：US15354320

申请日：2016-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： JONG-SOO KIM ,  Sam-jong Choi ,  Sue-ryeon Kim ,  Tae-hyoung Koo ,  Hyun-hee Ju ,  Cheong-jun Kim ,  Ji-won You

IPC: H01L23/00 ,  H01L23/544 ,  H01L21/324 ,  H01L21/02 ,  H01L21/66

CPC classification number: H01L23/562 ,  H01L21/02013 ,  H01L21/02021 ,  H01L21/02035 ,  H01L21/0262 ,  H01L21/324 ,  H01L22/12 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54493

Abstract: A semiconductor wafer including a main body including first and second surfaces opposite each other, a notch including a recess on an outer periphery, a first bevel region formed along the outer periphery of the main body, including a first slope connecting the first and second surfaces and having a first height with respect to a straight line extending from a first point where the first surface and the first slope meet to a second point where the second surface and the first slope meet, and a second bevel region in contact with the recess or opening, including a second slope connecting the first and second surfaces and having a second height, different from the first height, with respect to a straight line extending from a third point where the first surface and the second slope meet to a fourth point where the second surface and the second slope meet.

公开(公告)号：US10894935B2

公开(公告)日：2021-01-19

申请号：US15984050

申请日：2018-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Dongwoo Fine-Chem Co., Ltd.

Inventor： In-goo Kang ,  Sung-bae Kim ,  Baik-soon Choi ,  Sue-ryeon Kim ,  Young-taek Hong ,  Sang-tae Kim ,  Kyong-ho Lee ,  Hyung-pyo Hong ,  Seong-min Kim

IPC: C11D1/00 ,  C11D3/28 ,  C11D3/20 ,  C11D3/30 ,  C11D7/50 ,  H01L21/683 ,  H01L21/02 ,  C11D7/32 ,  C11D11/00 ,  H01L21/311 ,  H01L21/768 ,  C11D3/00 ,  H01L21/304 ,  C11D3/43 ,  C11D3/24 ,  C09J183/04 ,  B32B43/00 ,  H01L21/67 ,  H01L25/065 ,  H01L23/00 ,  B32B38/10 ,  C11D7/26

Abstract: Compositions for removing silicone resins and methods of thinning a substrate by using the same, as well as related methods, apparatus and systems for facilitating the removal of silicone resins are provided. The compositions for removing silicone resins, may include a heterocyclic solvent and an alkyl ammonium fluoride salt represented by a formula, (R)4N+F−, wherein R is a C1 to C4 linear alkyl group. Silicone resins may be effectively removed by using the compositions since the compositions exhibit an excellent decomposition rate with respect to the silicone resins that remain on a semiconductor substrate in a process of backside grinding of the semiconductor substrate, backside electrode formation, or the like.

公开(公告)号：US09806036B2

公开(公告)日：2017-10-31

申请号：US15354320

申请日：2016-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-soo Kim ,  Sam-jong Choi ,  Sue-ryeon Kim ,  Tae-hyoung Koo ,  Hyun-hee Ju ,  Cheong-jun Kim ,  Ji-won You

IPC: H01L21/02 ,  H01L29/06 ,  H01L23/00 ,  H01L21/66 ,  H01L21/324 ,  H01L23/544

CPC classification number: H01L23/562 ,  H01L21/02013 ,  H01L21/02021 ,  H01L21/02035 ,  H01L21/0262 ,  H01L21/324 ,  H01L22/12 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54493

Abstract: A semiconductor wafer including a main body including first and second surfaces opposite each other, a notch including a recess on an outer periphery, a first bevel region formed along the outer periphery of the main body, including a first slope connecting the first and second surfaces and having a first height with respect to a straight line extending from a first point where the first surface and the first slope meet to a second point where the second surface and the first slope meet, and a second bevel region in contact with the recess or opening, including a second slope connecting the first and second surfaces and having a second height, different from the first height, with respect to a straight line extending from a third point where the first surface and the second slope meet to a fourth point where the second surface and the second slope meet.