Abstract:
A semiconductor memory device is provided. The semiconductor memory device includes a substrate; a transistor disposed above the substrate, the transistor having a channel region defining an inner space; and a capacitor passing through the transistor in a vertical direction in the inner space.
Abstract:
A semiconductor memory device may include first and second bit lines spaced apart from each other, an interlayer insulating layer covering the first and second bit lines and including a groove extending to cross both of the first and second bit lines, a first channel pattern connected to the first bit line and in contact with an inner side surface of the groove and covering a top surface of the interlayer insulating layer, a second channel pattern connected to the second bit line and in contact with an opposite inner side surface of the groove and covering the top surface of the interlayer insulating layer, a word line in the groove, first and second electrodes on the interlayer insulating layer and in contact with the first and second channel patterns, respectively, and a dielectric layer between the first and second electrodes.
Abstract:
A network connection control apparatus and method of a terminal for switching connection between heterogeneous networks depending on the data communication environment are provided. The communication network connection control method of a terminal includes measuring received signal strength and Internet Protocol (IP) packet transmission and reception amounts in a state where the terminal is connected to an IP network, switching, when the received signal strength is equal to or less than a predetermined received signal strength threshold, from the connection to the IP network to a connection to a cellular network, comparing, when the received signal strength is greater than the threshold, the IP packet reception amount with a predetermined reception threshold, and switching, when the IP packet reception amount is equal to or less than the reception threshold, from the connection to the IP network to the connection to the cellular network.
Abstract:
A data transmission method is provided that can increase an amount of time that an electronic device has been in use and minimize the side effects. An electronic device adapted to the method is also provided. The data transmission method includes: recognizing a data transmission request of at least one first application; determining whether a first timer according to the data transmission request is within a second timer (a data detecting timer) where a data request of a second application required for network access is detected; and transmitting, when the first timer is within the second timer, request data related to the second application and user data of the first application by using at least part of the second timer and the first timer.
Abstract:
An electronic device including a transceiver, one or more processors, and memory storing instructions is disclosed. The instructions, when executed by the one or more processors, cause the electronic device to obtain first information indicating that a controlled device is in an offline state in which the controlled device is disconnected from a server, establish a device-to-device (D2D) connection with the controlled device, receive an error code related to the offline state of the controlled device from the controlled device through the D2D connection, determine a recovery method corresponding to the error code based on designated recovery policy information, and transmit, to the controlled device through the transceiver, a recovery command to instruct to recover a connection between the controlled device and the server based on the determined recovery method.
Abstract:
A semiconductor device including a substrate; a stack including electrodes and a channel separation pattern, the electrodes being stacked on the substrate and spaced apart from each other, and the channel separation pattern being between adjacent electrodes; and a vertical structure penetrating the stack, wherein the vertical structure includes a conductive pillar, a channel structure, and an interposing layer between the conductive pillar and the channel structure, the channel structure includes first and second channel layers vertically spaced apart from each other by the channel separation pattern, the electrodes include first and second electrodes, which are connected to the first and second channel layers, the channel separation pattern is between the first channel layer and the second channel layer, and the channel separation pattern is between one second electrode that is connected to the first channel layer and one first electrode that is connected to the second channel layer.
Abstract:
A semiconductor device includes a plurality of gate electrodes extending on a substrate in a first horizontal direction and each including first and second vertical extension sidewalls that are opposite to each other, a channel arranged on the first vertical extension sidewall of each gate electrode and including a vertical extension portion, a ferroelectric layer and a gate insulating layer that are sequentially located between the channel layer and the first vertical extension sidewall of each gate electrode, an insulating layer on the second vertical extension sidewall of each gate electrode, and a plurality of bit lines electrically connected to the channel layer and extending in a second horizontal direction that is different from the first horizontal direction.
Abstract:
A semiconductor device includes first conductive lines provided on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, second conductive lines spaced apart from the first conductive lines in a second direction parallel to the top surface of the substrate, a gate electrode disposed between the first and second conductive lines and extended in the first direction, a plurality of channel patterns provided to enclose a side surface of the gate electrode and spaced apart from each other in the first direction, a ferroelectric pattern between each of the channel patterns and the gate electrode, and a gate insulating pattern between each of the channel patterns and the ferroelectric pattern. Each of the channel patterns is connected to a corresponding one of the first conductive lines and a corresponding one of the second conductive lines.
Abstract:
A method and an apparatus for controlling a wireless network connection are provided. The method includes detecting a signal strength in a connected wireless network, determining whether the detected signal strength is greater than a first threshold, if the detected signal strength is not greater than the first threshold determining whether an error occurs at least once in data transmission through the connected wireless network, and controlling a connection state of the connected wireless network according to a result of the error determination.