公开(公告)号：US09147461B1

公开(公告)日：2015-09-29

申请号：US14185264

申请日：2014-02-20

申请人： Samsung Electronics Co., Ltd.

发明人： Jae-Youn Youn ,  So-Young Kim ,  Kwang-Sook Noh ,  Sang-Jae Rhee ,  Hyun-Chul Yoon ,  Yoon-Jae Lee ,  Jung-Bae Lee ,  Joo-Sun Choi

IPC分类号： G11C11/40 ,  G11C11/406 ,  G11C8/18 ,  G06F11/10 ,  G11C11/22

CPC分类号： G11C11/40626 ,  G06F11/106 ,  G11C7/1045 ,  G11C7/22 ,  G11C8/12 ,  G11C8/18 ,  G11C11/22 ,  G11C11/40618 ,  G11C11/4076 ,  G11C11/408 ,  G11C11/409

摘要： A semiconductor memory device includes a memory cell array and a refresh control circuit. The refresh circuit is configured to: perform a second burst refresh operation on the memory cell rows after the memory cell rows exit from a self refresh operation, and not perform the second burst refresh operation on the memory cell rows after the memory cell rows exit from a self refresh operation. Whether the refresh control circuit performs or does not perform the second burst refresh operation is based on a comparison between an entering time for the self refresh operation of the memory cell rows and a reference time.

摘要翻译： 半导体存储器件包括存储单元阵列和刷新控制电路。 刷新电路被配置为：在存储单元行从自刷新操作退出之后对存储单元行执行第二突发刷新操作，并且在存储单元行从退出之后不对存储单元行执行第二次突发刷新操作 自刷新操作。 刷新控制电路执行还是不执行第二脉冲串刷新操作是基于存储单元行的自刷新操作的输入时间与参考时间之间的比较。

公开(公告)号：US09042194B2

公开(公告)日：2015-05-26

申请号：US14057556

申请日：2013-10-18

申请人： Samsung Electronics Co., Ltd.

发明人： Chul-Woo Park ,  Joo-Sun Choi ,  Hong-Sun Hwang

IPC分类号： G11C11/402 ,  G11C11/406 ,  G11C11/408 ,  G11C8/08 ,  G11C29/02

CPC分类号： G11C11/40618 ,  G11C11/406 ,  G11C11/40611 ,  G11C11/408 ,  G11C29/023 ,  G11C29/028 ,  G11C2211/4065

摘要： A refresh method for a volatile memory device includes refreshing memory cells of a first set of rows of an array at a first refresh rate having a first refresh period, the first refresh rate being a lower rate having a longer refresh period than a second refresh rate having a second refresh period, wherein each memory cell in the first set of rows of the array has a retention time longer than the first refresh period; and refreshing memory cells of a second set of rows of the array at a third refresh rate having a third refresh period, the third refresh rate being a higher rate having a shorter refresh period than the second refresh rate having the second refresh period, wherein at least one memory cell of each row of the second set of rows has a retention time longer than the third refresh period and shorter than the first refresh period. The second refresh period corresponds to a refresh period defined in a standard for the volatile memory device.

摘要翻译： 用于易失性存储器件的刷新方法包括以具有第一刷新周期的第一刷新率来刷新阵列的第一组行的存储器单元，第一刷新率是具有比第二刷新率更长的刷新周期的较低速率 具有第二刷新周期，其中所述阵列的所述第一组行中的每个存储器单元具有比所述第一刷新周期更长的保持时间; 以及具有第三刷新周期的第三刷新率的阵列的第二组行的刷新存储单元，所述第三刷新率是具有比具有所述第二刷新周期的所述第二刷新率更短的刷新周期的较高速率，其中， 第二组行的每行的至少一个存储单元具有比第三刷新周期长的保留时间并且比第一刷新周期短。 第二刷新周期对应于在易失性存储器件的标准中定义的刷新周期。