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    Stacked semiconductor device, system including the same and method of transferring signals in the same
    1.
    发明授权
    Stacked semiconductor device, system including the same and method of transferring signals in the same 有权

    公开(公告)号：US10607965B2

    公开(公告)日：2020-03-31

    申请号：US16044886

    申请日：2018-07-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Haesuk Lee ,  So-Young Kim ,  Seung-Han Woo

    IPC: H01L25/065 ,  H01L23/538 ,  G11C5/02 ,  G11C5/06

    Abstract: A stacked semiconductor device includes a plurality of semiconductor dies stacked in a first direction, M data paths electrically connecting the plurality of semiconductor dies, one data path including one or more through-silicon vias, where M is a positive integer, a transmission circuit including M serialization units configured to serialize P transmission signals to M serial signals and output the M serial signals to the M data paths, respectively, where P is a positive integer greater than M and a reception circuit including M parallelization units configured to receive the M serial signals from the M data paths and parallelize the M serial signals to P reception signals corresponding to the P transmission signals. The number of the through-silicon vias is reduced by serializing the transmission signals, transferring the serialized signals through the smaller number of data paths between the stacked semiconductor dies and then parallelizing the transferred signals.

    CONTENTS PROVIDING SYSTEM AND OPERATING METHOD THEREOF
    3.
    发明申请
    CONTENTS PROVIDING SYSTEM AND OPERATING METHOD THEREOF 有权
    内容提供系统及其操作方法

    公开(公告)号：US20130184075A1

    公开(公告)日：2013-07-18

    申请号：US13740035

    申请日：2013-01-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： So-Young Kim ,  Hyun-Joo Oh

    IPC: A63F13/12

    CPC classification number: A63F13/69 ,  A63F13/12 ,  A63F13/52 ,  A63F13/53 ,  A63F13/537 ,  A63F13/792 ,  A63F13/822 ,  A63F2300/50 ,  A63F2300/55 ,  A63F2300/5553 ,  A63F2300/609 ,  G06Q30/02 ,  G06Q30/0209 ,  G06Q30/0255

    Abstract: According to one embodiment, a content providing system of a terminal in a content providing system, a content server is requested to provide specific content. The specific content and a reward item associated with the specific content are received from the content server. A reward item list representing reward items associated with content having content providers different from each other is generated. The reward item list is displayed. Multiple content are received from a plurality of content providers. A corresponding reward item is determined for each received content. A specific content provide request is received from the terminal. The requested content and a reward item corresponding to the requested content are then transmitted to the terminal.

    Abstract translation: 根据一个实施例，请求内容提供系统中的终端的内容提供系统，内容服务器提供特定内容。 从内容服务器接收与特定内容相关联的特定内容和奖励项目。 产生表示与具有彼此不同的内容提供者的内容相关联的奖励项目的奖励项目列表。 显示奖励项目列表。 从多个内容提供商接收多个内容。 为每个接收的内容确定相应的奖励项目。 从终端接收到特定的内容提供请求。 然后将所请求的内容和与所请求的内容相对应的奖励项目发送到终端。

    Stacked memory device, a system including the same and an associated method
    4.
    发明授权
    Stacked memory device, a system including the same and an associated method 有权

    公开(公告)号：US11114139B2

    公开(公告)日：2021-09-07

    申请号：US17172328

    申请日：2021-02-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun-Sung Shin ,  Ik-Joon Choi ,  So-Young Kim ,  Tae-Kyu Byun ,  Jae-Youn Youn

    IPC: G11C7/10 ,  G11C5/06 ,  G11C5/04 ,  G06F3/06 ,  G06F7/523 ,  G06F12/06 ,  G11C7/06 ,  G11C7/22

    Abstract: A stacked memory device includes: a logic semiconductor die; a plurality of memory semiconductor dies stacked with the logic semiconductor die, wherein each of the memory semiconductor dies includes a memory integrated circuit and one or more of the memory semiconductor dies is a calculation semiconductor die including a calculation unit; and through-silicon vias electrically connecting the logic semiconductor die and the plurality of memory semiconductor dies, wherein each of the calculation units is configured to perform calculations based on broadcast data and internal data and to generate calculation result data, wherein the broadcast data is commonly provided to the calculation semiconductor dies through the through-silicon vias, and the internal data is respectively read from the memory integrated circuits of the calculation semiconductor dies.

    Semiconductor memory device and memory system
    5.
    发明授权
    Semiconductor memory device and memory system 有权

    公开(公告)号：US09772803B2

    公开(公告)日：2017-09-26

    申请号：US14104574

    申请日：2013-12-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Bu-Il Jung ,  So-Young Kim

    IPC: G06F12/00 ,  G06F3/06 ,  G06F12/02

    CPC classification number: G06F3/0688 ,  G06F3/0616 ,  G06F3/064 ,  G06F12/0246 ,  G06F2212/7211

    Abstract: A semiconductor memory system or device includes a memory cell array and an address converter. The memory cell array includes a plurality of memory blocks, and there is at least one block that serves as a buffer. Each of the memory blocks includes at least one memory cell row. An address converting circuit along with a block copy circuit performs a block copy operation of copying data of a first memory block, which is a source block among the memory blocks, into a second block, which is a buffer or destination block, and maps a first logical address for accessing the first memory block onto a physical address designating the second block. The first memory block then can serve as a new destination block after the block copy operation of the first memory block is completed.

    CONTROL METHOD AND APPARATUS OF ELECTRONIC DEVICE USING CONTROL DEVICE
    6.
    发明申请
    CONTROL METHOD AND APPARATUS OF ELECTRONIC DEVICE USING CONTROL DEVICE 审中-公开
    使用控制装置的电子装置的控制方法和装置

    公开(公告)号：US20130207892A1

    公开(公告)日：2013-08-15

    申请号：US13762937

    申请日：2013-02-08

    Applicant: Samsung Electronics Co., Ltd

    Inventor： Jae-Won Kim ,  So-Young Kim ,  Woo-Hyoung Lee

    IPC: G06F3/033

    CPC classification number: G06F3/033 ,  G06F3/04812 ,  H04N5/4403 ,  H04N21/42208 ,  H04N21/4222 ,  H04N21/42222 ,  H04N21/42224 ,  H04N21/4854 ,  H04N2005/4428 ,  H04N2005/443 ,  H04N2005/4432

    Abstract: A method and apparatus of controlling an electronic device use a control device. A method of the electronic device using the control device includes moving a cursor displayed on a screen of the electronic device according to cursor control information received from the control device, measuring a distance between a position of the cursor and a peripheral object, and, when the measured distance is less than or equal to a threshold distance, moving the cursor to a position corresponding to the peripheral object.

    Abstract translation: 控制电子装置的方法和装置使用控制装置。 使用该控制装置的电子装置的方法包括根据从控制装置接收的光标控制信息，移动显示在电子装置的画面上的光标，测定光标的位置与周边物体之间的距离，以及何时 测量距离小于或等于阈值距离，将光标移动到与周边物体相对应的位置。

    Stacked memory device, a system including the same and an associated method
    7.
    发明授权
    Stacked memory device, a system including the same and an associated method 有权

    公开(公告)号：US10923165B2

    公开(公告)日：2021-02-16

    申请号：US16743051

    申请日：2020-01-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun-Sung Shin ,  Ik-Joon Choi ,  So-Young Kim ,  Tae-Kyu Byun ,  Jae-Youn Youn

    IPC: G11C7/10 ,  G11C5/06 ,  G11C5/04 ,  G06F3/06 ,  G06F7/523 ,  G06F12/06 ,  G11C7/06 ,  G11C7/22

    Abstract: A stacked memory device includes: a logic semiconductor die; a plurality of memory semiconductor dies stacked with the logic semiconductor die, wherein each of the memory semiconductor dies includes a memory integrated circuit and one or more of the memory semiconductor dies is a calculation semiconductor die including a calculation unit; and through-silicon vias electrically connecting the logic semiconductor die and the plurality of memory semiconductor dies, wherein each of the calculation units is configured to perform calculations based on broadcast data and internal data and to generate calculation result data, wherein the broadcast data is commonly provided to the calculation semiconductor dies through the through-silicon vias, and the internal data is respectively read from the memory integrated circuits of the calculation semiconductor dies.

    Stacked memory device, a system including the same and an associated method
    8.
    发明授权
    Stacked memory device, a system including the same and an associated method 有权

    公开(公告)号：US10553260B2

    公开(公告)日：2020-02-04

    申请号：US16038269

    申请日：2018-07-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun-Sung Shin ,  Ik-Joon Choi ,  So-Young Kim ,  Tae-Kyu Byun ,  Jae-Youn Youn

    IPC: G11C7/10 ,  G06F3/06 ,  G06F7/523 ,  G06F12/06 ,  G11C7/06 ,  G11C7/22

    Abstract: A stacked memory device includes; a logic semiconductor die; a plurality of memory semiconductor dies stacked with the logic semiconductor die, wherein each of the memory semiconductor dies includes a memory integrated circuit and one or more of the memory semiconductor dies is a calculation semiconductor die including a calculation unit; and through-silicon vias electrically connecting the logic semiconductor die and the plurality of memory semiconductor dies, wherein each of the calculation units is configured to perform calculations based on broadcast data and internal data and to generate calculation result data, wherein the broadcast data is commonly provided to the calculation semiconductor dies through the through-silicon vias, and the internal data is respectively read from the memory integrated circuits of the calculation semiconductor dies.

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