Abstract:
A recess gate transistor includes: a drain region and a source region in a semiconductor substrate and doped with first-type impurities; a recess region recessed in the semiconductor substrate between the drain region and the source region; a gate insulation layer on the recess region, a gate electrode on the gate insulation layer filling the recess region; and a charge pocket region below the recess region and doped with second-type impurities. A semiconductor chip includes a plurality of recess gate transistors, and an image sensor includes a semiconductor chip including a plurality of recess gate transistors.
Abstract:
A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light.
Abstract:
A sensing method for an image sensor includes: connecting a first column line with a second column line in response to switch signals; and sensing a first pixel signal generated based on a first signal output from a first pixel and a second signal output from a second pixel, the first pixel and the second pixel being connected to the first column line and the second pixel being connected to the second column line.