Abstract:
A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light.
Abstract:
An image sensor includes a pixel array in which a plurality of pixels, first and second row selection lines separated from each other, and first and second column lines separated from each other are disposed and a column selecting circuit configured to connect the first and second column lines using a column selection signal. The pixel array includes a first pixel which is connected to the first row selection line and the first column line and a second pixel which is disposed in the same row as the first pixel and connected to the second row selection line and the second column line.
Abstract:
An image sensor is provided. The image sensor includes a well of a second conductivity type formed on an impurity layer of a first conductivity type, source and drain regions of the first conductivity type, formed in the well to be spaced apart from each other, a first photo diode of the first conductivity type formed in the well to overlap the source and drain regions, a second photo diode of the first conductivity type formed so as not to overlap the source and drain regions and formed to be adjacent to the first photo diode, and a gate electrode formed on the first and second photo diodes.
Abstract:
An ambient light sensor includes a photoelectric conversion unit, a current control unit, a signal conversion unit and a comparison unit. The photoelectric conversion unit provides a photo current having a magnitude corresponding to illuminance of incident light to a first node. The current control unit generates a control current exponentially proportional to an elapse time based on a clock signal, provides the control current to the first node, and outputs a digital code corresponding to the elapse time in response to a reset signal. The signal conversion unit generates a comparison voltage logarithmically proportional to a sum of the photo current and the control current. The comparison unit generates the reset signal by comparing a magnitude of the comparison voltage and a magnitude of a reference voltage. The ambient light sensor generates the digital code effectively representing illuminance of ambient light that eyes of a human being perceives.
Abstract:
An image sensor senses object information and converts the sensed object information into an electrical signal. An image processing apparatus uses the image sensor. The image sensor includes a column signal line connected to output terminals of a plurality of pixel sensors, a comparator circuit configured to output a signal corresponding to a comparison result of a signal output to the column signal line and a reference signal, an ADC circuit configured to convert an analog signal corresponding to an optical signal sensed by the pixel sensor selected from the plurality of pixel sensors connected to the column signal line into digital data based on the signal output from the comparator circuit and, a load circuit connected in series to the comparator circuit between the column signal line and a ground terminal, wherein the load circuit is configured as a common load device of the plurality of pixel sensors connected to the column signal line and the comparator circuit.