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    3DIMENSION IMAGE SENSOR AND SYSTEM INCLUDING THE SAME
    1.
    发明申请
    3DIMENSION IMAGE SENSOR AND SYSTEM INCLUDING THE SAME 审中-公开
    3DIMENSION图像传感器和系统，包括它们

    公开(公告)号：US20140015932A1

    公开(公告)日：2014-01-16

    申请号：US13940419

    申请日：2013-07-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Won Joo KIM ,  Doo Cheol PARK ,  Yoon Dong PARK ,  Jung Bin YUN ,  Kwang Min LEE

    IPC: H04N13/02

    CPC classification number: H04N13/257 ,  H01L27/14621 ,  H01L27/1464

    Abstract: A 3D image sensor includes a first color filter configured to pass wavelengths of a first region of visible light and wavelengths of infrared light; a second color filter configured to pass wavelengths of a second region of visible light and the wavelengths of infrared light; and an infrared sensor configured to detect the wavelengths of infrared light passed through the first color filter.

    Abstract translation: 3D图像传感器包括被配置为通过可见光的第一区域和红外光的波长的波长的第一滤色器; 第二滤色器，被配置为通过第二可见光区域和红外光的波长的波长; 以及被配置为检测通过第一滤色器的红外光的波长的红外传感器。

    OPTICAL BIOSENSOR AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    OPTICAL BIOSENSOR AND MANUFACTURING METHOD THEREOF 有权
    光生物传感器及其制造方法

    公开(公告)号：US20140134712A1

    公开(公告)日：2014-05-15

    申请号：US14072118

    申请日：2013-11-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyoung Won NA ,  Yoon Dong PARK ,  Sung Dong SUH ,  Dong Mo IM

    IPC: G01N21/84 ,  H01L31/18 ,  G01N33/483

    CPC classification number: H01L31/18 ,  G01N21/7746 ,  G01N33/483

    Abstract: An optical biosensor, and a method of manufacturing the same, includes a first layer, a second layer stacked on the first layer, a first grating coupler within the first layer and the second layer, and a second grating coupler within the first layer. The first grating coupler is configured to couple a light pattern provided to a front side of the optical biosensor. The second grating coupler is configured to output the light pattern coupled by the first grating coupler to a photoelectric conversion element on a rear side of the optical biosensor.

    Abstract translation: 光学生物传感器及其制造方法包括：第一层，堆叠在第一层上的第二层，第一层和第二层内的第一光栅耦合器，以及第一层内的第二光栅耦合器。 第一光栅耦合器被配置为耦合提供给光学生物传感器前侧的光图案。 第二光栅耦合器被配置为将由第一光栅耦合器耦合的光图案输出到光学生物传感器的后侧上的光电转换元件。

    RECESS GATE TRANSISTORS AND DEVICES INCLUDING THE SAME
    3.
    发明申请
    RECESS GATE TRANSISTORS AND DEVICES INCLUDING THE SAME 审中-公开
    记忆闸门晶体管和包括其的装置

    公开(公告)号：US20140104942A1

    公开(公告)日：2014-04-17

    申请号：US14051035

    申请日：2013-10-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young-Gu JIN ,  Ju Hwan JUNG ,  Yoon Dong PARK

    IPC: H01L29/768 ,  H01L27/148 ,  G11C11/4074

    CPC classification number: H01L29/768 ,  G11C11/404 ,  G11C11/4074 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/148

    Abstract: A recess gate transistor includes: a drain region and a source region in a semiconductor substrate and doped with first-type impurities; a recess region recessed in the semiconductor substrate between the drain region and the source region; a gate insulation layer on the recess region, a gate electrode on the gate insulation layer filling the recess region; and a charge pocket region below the recess region and doped with second-type impurities. A semiconductor chip includes a plurality of recess gate transistors, and an image sensor includes a semiconductor chip including a plurality of recess gate transistors.

    Abstract translation: 凹槽栅极晶体管包括：半导体衬底中的漏极区域和源极区域，并掺杂有第一种杂质; 在所述漏极区域和所述源极区域之间凹陷在所述半导体衬底中的凹陷区域; 在所述凹部区域上的栅极绝缘层，在所述栅极绝缘层上填充所述凹部的栅电极; 以及位于凹陷区域下方并掺杂有第二类型杂质的电荷袋区域。 半导体芯片包括多个凹槽栅极晶体管，并且图像传感器包括包括多个凹槽栅极晶体管的半导体芯片。

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