公开(公告)号：US09257623B2

公开(公告)日：2016-02-09

申请号：US14574094

申请日：2014-12-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-jin Kim ,  Min-young Son ,  Yong-min Kwon

IPC: H01L33/38 ,  H01L33/56 ,  H01L33/62 ,  H05B33/08 ,  H04N5/225 ,  H01L33/44 ,  H01L33/50 ,  H01L33/00

CPC classification number: H01L33/62 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/44 ,  H01L33/50 ,  H01L33/56 ,  H04N5/2256 ,  H04N5/2257 ,  H05B33/0845

Abstract: A light-emitting diode package includes a light-emitting structure, a first electrode pad and a second electrode pad connected with the light-emitting structure, an insulating pattern layer in contact with a bottom surface of the light-emitting structure and abutting the first and second electrode pads, a substrate including via-holes in contact with a bottom surface of the insulating pattern layer and exposing a portion of the first electrode pad and a portion of the second electrode pad, a first penetrating electrode and a second penetrating electrode that are disposed in the via-holes and respectively connected with the first and second electrode pads, a fluorescent material layer disposed on the light-emitting structure, a glass disposed on and spaced apart from the light-emitting structure with the fluorescent material layer therebetween.

Abstract translation: 发光二极管封装包括发光结构，第一电极焊盘和与发光结构连接的第二电极焊盘，与发光结构的底表面接触的绝缘图案层，并与第一 和第二电极焊盘，包括与绝缘图案层的底面接触的通孔的基板，暴露第一电极焊盘的一部分和第二电极焊盘的一部分，第一穿透电极和第二穿透电极， 设置在通孔中，分别与第一和第二电极焊盘连接，设置在发光结构上的荧光材料层，设置在发光结构上并与发光结构间隔开的玻璃，其间具有荧光材料层。

公开(公告)号：US09905739B2

公开(公告)日：2018-02-27

申请号：US15341293

申请日：2016-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-wook Chung ,  Jung-jin Kim ,  Pun-jae Choi ,  Si-han Kim ,  Sung-don Gang ,  Ah-young Woo

IPC: H01L33/56 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44 ,  H01L33/50 ,  H01L33/54 ,  H01L33/60 ,  H01L33/46

CPC classification number: H01L33/56 ,  H01L33/22 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/54 ,  H01L33/60

Abstract: A semiconductor light emitting device may include a light emitting package. A light emitting package may include a light emitting stack including a sequential stack of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. An encapsulation layer may at least partially surround the second conductivity type semiconductor layer, and a wavelength conversion layer may cover the first conductivity type semiconductor layer. One or more of the encapsulation layer and the wavelength conversion layer may have a greater coefficient of thermal expansion (CTE) than a GaN-based compound semiconductor. The semiconductor light emitting device may include a stress applying structure that may apply a tensile stress to the light emitting stack. The light emitting stack may have reduced thermal droop at an operation temperature and improved luminous efficiency.