公开(公告)号：US20230313040A1

公开(公告)日：2023-10-05

申请号：US18194908

申请日：2023-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuyoung Hwang ,  Byungjoon Kang ,  Daihyun Kim ,  Sungmin Kim ,  Hwang Suk Kim ,  Mihyun Park ,  Jungmin Oh ,  Hyosan Lee ,  Byoungki Choi

IPC: C09K13/00 ,  H01L21/311

CPC classification number: C09K13/00 ,  H01L21/31111

Abstract: Provided are an etching composition including an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator, a method of preparing a metal-containing film etching by using the same, and a method of manufacturing a semiconductor device by using the same.

公开(公告)号：US20210115334A1

公开(公告)日：2021-04-22

申请号：US16946495

申请日：2020-06-24

Applicant: Samsung Electronics Co., Ltd. ,  Dongwoo Fine-Chem Co., Ltd.

Inventor： Kihun Song ,  Jungmin Oh ,  Hyosan Lee ,  Hyojoong Yoon ,  Minjung Kim ,  Jongwook Baek

IPC: C09K13/06 ,  H01L21/3213 ,  H01L27/108

Abstract: Metal-containing film etchant compositions may include hydrogen peroxide (H2O2), a phosphoric acid compound, a heterocyclic organic amine compound including at least one heteroatom in a ring, and water. Manufacturing methods of an integrated circuit (IC) may include performing a dry etch process on a conductive structure including a metal nitride film and a metal film to form a conductive pattern intermediate product and performing a wet etch process on the conductive pattern intermediate product using an etching atmosphere providing a higher etch selectivity with respect to the metal nitride film than the metal film. The etching atmosphere may include an etchant composition including hydrogen peroxide, a phosphoric acid compound, a heterocyclic organic amine compound including at least one heteroatom in a ring, and water.

公开(公告)号：US20230383218A1

公开(公告)日：2023-11-30

申请号：US18324260

申请日：2023-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungjoon Kang ,  Jiwon Kim ,  Sungmin Kim ,  Hwang Suk Kim ,  Jungmin Oh ,  Hyosan Lee ,  Byoungki Choi ,  Cheol Ham ,  Kyuyoung Hwang

IPC: C11D7/26 ,  C11D11/00

CPC classification number: C11D7/265 ,  C11D11/0047

Abstract: A cleaning composition for removing residues on surfaces contains a solvent and a cleaning accelerator, but does not contain an oxidant, wherein the cleaning accelerator includes at least one of a salt represented by Formula 1A or a salt represented by Formula 1B. A method of cleaning a metal-containing film includes preparing the cleaning composition, and bring the cleaning composition into contact with a metal-containing film provided on a substrate, the metal-containing film having a surface on which residues are generated. The Formulae 1A and 1B are:

公开(公告)号：US12234400B2

公开(公告)日：2025-02-25

申请号：US18098847

申请日：2023-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changjun Park ,  Jaesung Lee ,  Junghun Lim ,  Jungmin Oh ,  Sangwon Bae ,  Hyosan Lee

IPC: C09K13/10 ,  C09K13/08 ,  H01L21/306 ,  H10B12/00

Abstract: An etchant composition for etching a silicon germanium film includes, based on a total weight of the etchant composition, about 5 wt % to about 14 wt % of an oxidant, about 0.01 wt % to about 5 wt % of a fluorine compound, about 0.01 wt % to about 5 wt % of an amine compound, about 0.01 wt % to about 1 wt % of an alcohol compound having a hydrophilic head and a hydrophobic tail, about 60 wt % to about 90 wt % of an organic solvent, and a balance of water. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a structure in which a plurality of silicon films and a plurality of silicon germanium films are alternately stacked; and selectively removing the plurality of silicon germanium films by using the etchant composition.

公开(公告)号：US12016078B2

公开(公告)日：2024-06-18

申请号：US17507081

申请日：2021-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungmin Oh ,  Sanghyun Lee

IPC: H04W8/18 ,  H04W88/06

CPC classification number: H04W8/18 ,  H04W88/06

Abstract: According to various embodiments, an electronic device may comprise at least one processor, and an RF circuit configured to process a data packet associated with a first SIM connected to the at least one processor and a data packet associated with a second SIM connected to the at least one processor. The at least one processor may be configured to: establish a first PDU session corresponding to the first SIM, establish a second PDU session corresponding to the second SIM, store first information for the first PDU session, based on a network slice type of the first PDU session being a specified first type, and process a first data packet associated with the first SIM using the RF circuit while deferring execution of an operation associated with the second SIM based on a processing request for the first data packet associated with the first SIM corresponding to the stored first information.

公开(公告)号：US11427759B2

公开(公告)日：2022-08-30

申请号：US16946495

申请日：2020-06-24

Applicant: Samsung Electronics Co., Ltd. ,  DONGWOO FINE-CHEM Co., Ltd.

Inventor： Kihun Song ,  Jungmin Oh ,  Hyosan Lee ,  Hyojoong Yoon ,  Minjung Kim ,  Jongwook Baek

IPC: C09K13/06 ,  H01L27/108 ,  H01L21/3213

Abstract: Metal-containing film etchant compositions may include hydrogen peroxide (H2O2), a phosphoric acid compound, a heterocyclic organic amine compound including at least one heteroatom in a ring, and water. Manufacturing methods of an integrated circuit (IC) may include performing a dry etch process on a conductive structure including a metal nitride film and a metal film to form a conductive pattern intermediate product and performing a wet etch process on the conductive pattern intermediate product using an etching atmosphere providing a higher etch selectivity with respect to the metal nitride film than the metal film. The etching atmosphere may include an etchant composition including hydrogen peroxide, a phosphoric acid compound, a heterocyclic organic amine compound including at least one heteroatom in a ring, and water.

公开(公告)号：US11330655B2

公开(公告)日：2022-05-10

申请号：US17141683

申请日：2021-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghyun Lee ,  Jungmin Oh ,  Kyungwon Lee

IPC: H04W76/15 ,  H04W72/04 ,  H04W24/08 ,  H04L41/0813 ,  H04W88/06

Abstract: A user equipment (UE) may include a first subscriber identity module corresponding to a first cellular network, a second subscriber identity module corresponding to a second cellular network, a wireless communication circuit, and a processor. The processor may be is configured to: perform data communication with the first cellular network that supports EUTRA NR dual connectivity (EN-DC) using first identity information of the first subscriber identity module, via the wireless communication circuit; detect an activity that triggers data communication via the second cellular network; and in response to the detection of the activity, perform a process of connecting data communication with the second cellular network using second identify information of the second subscriber identity module via the wireless communication circuit, and maintain support of an EN-DC of a UE capability associated with the first cellular network.

公开(公告)号：US12289424B2

公开(公告)日：2025-04-29

申请号：US17987479

申请日：2022-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Songkyu Kim ,  Sanghyun Lee ,  Suhan Kim ,  Dongchul Ma ,  Jungmin Oh ,  Hyoungkwon Kim ,  Eunsoo Bae ,  Kyungwon Lee

IPC: H04M1/72 ,  H04M1/72454 ,  H04W72/542

Abstract: An example electronic device may include a plurality of antennas; and at least one communication processor communicating with a first communication network or a second communication network through the plurality of antennas. The at least one communication processor may be configured to set up a call with an external electronic device through the first communication network, identify information related to call quality in a call connected state with the external electronic device, and perform an operation for reducing a number of antennas for reception among the plurality of antennas based on identifying that the information related to the call quality meets a designated condition.

公开(公告)号：US12213213B2

公开(公告)日：2025-01-28

申请号：US17733112

申请日：2022-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungmin Oh ,  Sanghyun Lee

IPC: H04W8/24 ,  H04W60/00 ,  H04W76/10

Abstract: According to various embodiments, an electronic device includes: at least one processor, and the at least one processor is configured to: check at least one event requiring a change in user equipment (UE) capability of the electronic device, change the UE capability of the electronic device based on the at least one event and transmit a TAU request message indicating that UE capability information update is requested, enter an idle state, based on receiving a TAU acceptance message corresponding to the TAU request message in a state in which the UE capability enquiry message corresponding to the TAU request is not received, establish a new RRC connection with the network in the idle state, receive a UE capability enquiry message based on the new RRC connection, and transmit a UE capability information message including the changed UE capability, based on the reception of the UE capability enquiry message.

公开(公告)号：US12120561B2

公开(公告)日：2024-10-15

申请号：US17525584

申请日：2021-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoseob Kwak ,  Jinyoung Song ,  Jungmin Oh ,  Sanghyun Lee ,  Byungho Hong

IPC: H04W36/00 ,  H04W88/06

CPC classification number: H04W36/0066 ,  H04W36/0058 ,  H04W36/0061 ,  H04W36/0069 ,  H04W36/00835 ,  H04W88/06

Abstract: According to various embodiments, an electronic device may include at least one processor configured to support a first radio access technology (RAT) and a second RAT, wherein the at least one processor is configured to: receive a radio resource control (RRC) reconfiguration message including a measurement object (MO) from a network, based on the first RAT, and based on dual connectivity (DC) of the first RAT and the second RAT being identified to be restricted, perform a measurement of at least one first frequency satisfying a condition associated with a stand alone (SA) mode among at least one frequency based on the second RAT, which is identified based on the MO, and refrain from performing a measurement of at least one second frequency not satisfying the condition among the at least one frequency.