公开(公告)号：US20230313040A1

公开(公告)日：2023-10-05

申请号：US18194908

申请日：2023-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuyoung Hwang ,  Byungjoon Kang ,  Daihyun Kim ,  Sungmin Kim ,  Hwang Suk Kim ,  Mihyun Park ,  Jungmin Oh ,  Hyosan Lee ,  Byoungki Choi

IPC: C09K13/00 ,  H01L21/311

CPC classification number: C09K13/00 ,  H01L21/31111

Abstract: Provided are an etching composition including an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator, a method of preparing a metal-containing film etching by using the same, and a method of manufacturing a semiconductor device by using the same.

公开(公告)号：US11028488B2

公开(公告)日：2021-06-08

申请号：US16574372

申请日：2019-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungah Kim ,  Mihyun Park ,  Jinwoo Lee ,  Keonyoung Kim ,  Hyosan Lee ,  Hoon Han ,  Jin Uk Lee ,  Jung Hun Lim

IPC: C23F1/26 ,  C23F1/30 ,  H01L21/311 ,  H01L21/306

Abstract: Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

公开(公告)号：US11342203B2

公开(公告)日：2022-05-24

申请号：US16739409

申请日：2020-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon Jeong ,  Mihyun Park ,  Yongsun Ko ,  Kwangwook Lee ,  Kuntack Lee ,  Hayoung Jeon ,  Yongjhin Cho ,  Jihoon Cha

IPC: H01L21/02 ,  H01L21/67

Abstract: A substrate cleaning apparatus includes a support inside a chamber to hold a substrate, a first supply source inside the chamber that includes a first nozzle along a first direction and facing an upper surface of the support, the first nozzle to spray polymer and solvent onto the substrate to form a coating, and a second nozzle at an oblique angle to the first direction and facing an edge of the support to inject a hot gas toward the coating to volatilize the solvent, a second supply source inside the chamber and having a third nozzle facing the upper surface of the support to inject a peeling treatment to the coating to peel the coating from the substrate, and a third supply source inside the chamber and facing a lower surface of the support to inject the hot gas to heat a second surface of the substrate.

公开(公告)号：US10186427B2

公开(公告)日：2019-01-22

申请号：US15833184

申请日：2017-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung Hwan Kim ,  Ingi Kim ,  Mihyun Park ,  Young-Hoo Kim ,  Ui-soon Park ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

IPC: H01L21/311 ,  H01L21/67

Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

公开(公告)号：US11795550B2

公开(公告)日：2023-10-24

申请号：US17313534

申请日：2021-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungah Kim ,  Mihyun Park ,  Jinwoo Lee ,  Keonyoung Kim ,  Hyosan Lee ,  Hoon Han ,  Jin Uk Lee ,  Jung Hun Lim

IPC: C23F1/26 ,  C23F1/30 ,  H01L21/311 ,  H01L21/306 ,  B81C1/00 ,  C09K13/04

CPC classification number: C23F1/26 ,  B81C1/00539 ,  C09K13/04 ,  C23F1/30 ,  H01L21/30604 ,  H01L21/31111

Abstract: A method of etching a metal barrier layer and a metal layer is provided. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

公开(公告)号：US09852921B2

公开(公告)日：2017-12-26

申请号：US15175062

申请日：2016-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung Hwan Kim ,  Ingi Kim ,  Mihyun Park ,  Young-Hoo Kim ,  Ui-soon Park ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

IPC: G01N15/06 ,  G01N33/00 ,  G01N33/48 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31111 ,  H01L21/67086 ,  H01L21/67253 ,  H01L21/67288

Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.