-
1.发明授权Semiconductor light emitting device and semiconductor light emitting apparatus having the same 有权半导体发光器件和具有该半导体发光器件的半导体发光器件公开(公告)号：US09196812B2
公开(公告)日：2015-11-24
申请号：US14543481
申请日：2014-11-17
发明人： Myong Soo Cho , Yong-Il Kim , Jin Ha Kim , Kwang Min Song , Sang Seok Lee
CPC分类号： H01L33/62 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/44 , H01L2224/16225 , H01L2224/16245 , H01L2933/0091
摘要： In example embodiments, a semiconductor light emitting device includes a light emitting structure, first and second insulating layers, a barrier metal layer, and an electrode. The light emitting structure includes an active layer between a first and second conductivity-type semiconductor layer. The first insulating layer is on the light emitting structure and defines a first one and a second one of first openings that respectively expose the first and second conductivity-type semiconductor layers. The barrier metal layer is on the first insulating layer and electrically connected to the first and second conductivity-type semiconductor layers through the first and second one of the first openings. The second insulating layer is on the barrier metal layer and defines a second opening that partially exposes the barrier metal layer. The electrode is on the barrier metal layer and electrically connected to the first and second conductivity-type semiconductor layers through the barrier metal layer.
摘要翻译： 在示例性实施例中，半导体发光器件包括发光结构，第一和第二绝缘层，阻挡金属层和电极。 发光结构包括在第一和第二导电类型半导体层之间的有源层。 第一绝缘层位于发光结构上并且限定分别暴露第一和第二导电类型半导体层的第一开口和第二开口中的第一绝缘层。 阻挡金属层位于第一绝缘层上，并通过第一和第二开口与第一和第二导电型半导体层电连接。 第二绝缘层位于阻挡金属层上并且限定了部分地暴露阻挡金属层的第二开口。 电极在阻挡金属层上，并通过阻挡金属层与第一和第二导电型半导体层电连接。
-
公开(公告)号：US09099629B2
公开(公告)日：2015-08-04
申请号：US13929431
申请日：2013-06-27
发明人： Jong In Yang , Yong Il Kim , Kwang Min Song , Wan Tae Lim , Se Jun Han , Hyun Kwon Hong
IPC分类号： H01L27/15 , H01L29/267 , H01L31/12 , H01L33/00 , H01L33/62 , H01L33/20 , H01L33/38 , H01L33/44
CPC分类号： H01L33/0075 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2224/16 , H01L2933/0016
摘要： A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.
摘要翻译： 半导体发光器件包括第一导电半导体层，有源层，第二导电半导体层，第一内部电极，第二内部电极，绝缘部分以及第一和第二焊盘电极。 有源层设置在第一导电半导体层的第一部分上，并且其上设置有第二导电层。 第一内部电极设置在与第一部分分离的第一导电半导体层的第二部分上。 第二内部电极设置在第二导电半导体层上。 绝缘部分设置在第一和第二内部电极之间，并且第一和第二焊盘电极设置在绝缘部分上以连接到第一和第二内部电极中的相应一个。
-
公开(公告)号：US09324904B2
公开(公告)日：2016-04-26
申请号：US14817750
申请日：2015-08-04
发明人： Jong In Yang , Yong Il Kim , Kwang Min Song , Wan Tae Lim , Se Jun Han , Hyun Kwon Hong
CPC分类号： H01L33/0075 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2224/16 , H01L2933/0016
摘要： A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.
-
4.发明授权Semiconductor light emitting element, and light emitting device having conductive vias of first electrode structure disposed below second pad electrode of second electrode structure 有权半导体发光元件和具有设置在第二电极结构的第二焊盘电极下方的第一电极结构的导电通孔的发光器件公开(公告)号：US09166109B2
公开(公告)日：2015-10-20
申请号：US13900268
申请日：2013-05-22
发明人： Jong In Yang , Tae Hyung Kim , Kwang Min Song , Seung Hwan Lee , Wan Tae Lim , Se Jun Han , Hyun Kwon Hong , Su Min Hwangbo
CPC分类号： H01L33/382 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.
摘要翻译： 半导体发光元件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 第一电极结构包括连接到第一导电类型半导体层的导电通孔。 第二电极结构连接到第二导电类型半导体层。 具有开放区域的绝缘部分暴露第一和第二电极结构的一部分同时覆盖第一和第二电极结构。 第一和第二焊盘电极形成在由开放区域暴露的第一和第二电极结构上，并连接到第一和第二电极结构。
-
-
-
搜索结果
4 条记录 (耗时 0.013 秒)
