公开(公告)号：US20190165257A1

公开(公告)日：2019-05-30

申请号：US15970963

申请日：2018-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun LEE ,  Sang-Kuk KIM ,  Oik KWON ,  lnho KIM ,  Jongchul PARK ,  Kwangyoung OH

IPC: H01L43/08 ,  H01F10/32 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/1087 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic memory device includes a lower interlayer insulating layer on a substrate, and a plurality of magnetic tunnel junction patterns on the lower interlayer insulating layer and isolated from direct contact with each other in a direction extending parallel to a top surface of the substrate. The lower interlayer insulating layer includes an upper surface including a recessed surface and a top surface, the recessed surface at least partially defining an inner sidewall and a bottom surface of a recess region between adjacent magnetic tunnel junction patterns, such that the recessed surface at least partially defines the recess region. The inner sidewall is inclined at an acute angle with respect to the top surface of the substrate, and the bottom surface has a shape that is convex toward the top surface of the substrate, in direction extending perpendicular to the top surface of the substrate.

公开(公告)号：US20220149089A1

公开(公告)日：2022-05-12

申请号：US17515769

申请日：2021-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghoon KHANG ,  Kwangyoung OH ,  Chongkwang CHANG ,  Jinyoung KIM ,  Taehun LEE

IPC: H01L27/146 ,  H04N5/369

Abstract: An image sensor includes: a semiconductor substrate having a first side and a second side opposite to each other; a plurality of photoelectric regions arranged in the semiconductor substrate in a first direction and a second direction, perpendicular to each other, in a first region of the semiconductor substrate; and a first separation structure disposed between the plurality of photoelectric regions in the first region of the semiconductor substrate. The first separation structure includes a lower separation structure and an upper separation structure disposed above the lower separation structure, and the first separation structure includes a linear portion located between the plurality of photoelectric regions and extending in the first direction, wherein, in a cross-sectional structure of the linear portion of the first separation structure in the first direction, at least one of an upper surface of the lower separation structure and a lower surface of the upper separation structure has a wavy shape.