公开(公告)号：US20180012889A1

公开(公告)日：2018-01-11

申请号：US15697720

申请日：2017-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Yeol Song ,  Wan-don Kim ,  Oh-seong Kwon ,  Hyeok-jun Son ,  Sang-jin Hyun ,  Hoon-joo NA

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823462 ,  H01L29/0653 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

Abstract: Integrated circuit devices include a substrate including first and second fin-type active regions and first and second gate structures. The first gate structure includes first gate insulating layer on the first fin-type active region to cover upper surface and both side surfaces of the first fin-type active region, first gate electrode on the first gate insulating layer and has first thickness in first direction perpendicular to upper surface of the substrate, and second gate electrode on the first gate electrode. The second gate structure includes second gate insulating layer on the second fin-type active region to cover upper surface and both side surfaces of the second fin-type active region, third gate insulating layer on the second gate insulating layer, third gate electrode on the third gate insulating layer and has second thickness different from the first thickness in the first direction, and fourth gate electrode on the third gate electrode.

公开(公告)号：US20150193354A1

公开(公告)日：2015-07-09

申请号：US14507833

申请日：2014-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Oh-seong Kwon ,  Hwan-soo Han ,  Jung-sik Choi ,  Sun-young Lim

IPC: G06F12/10

CPC classification number: G06F12/1027 ,  G06F12/0246 ,  G06F2212/1041 ,  G06F2212/202 ,  G06F2212/305

Abstract: Provided is a memory mapping method, and particularly provided is a nonvolatile main memory mapping method for managing a nonvolatile main memory. The nonvolatile memory mapping method includes: performing a system call in order to access a file page that is required to operate a process stored in a kernel area of a nonvolatile main memory, wherein both the file page and process are stored in the kernel area of the nonvolatile main memory; and mapping a physical address of the file page to a virtual address of a user area of the nonvolatile main memory.

Abstract translation: 提供了一种存储器映射方法，特别地提供了一种用于管理非易失性主存储器的非易失性主存储器映射方法。 非易失性存储器映射方法包括：执行系统调用以访问操作存储在非易失性主存储器的内核区域中的处理所需的文件页面，其中文件页面和处理都存储在非易失性主存储器的内核区域中 非易失性主存储器; 以及将所述文件页面的物理地址映射到所述非易失性主存储器的用户区域的虚拟地址。

公开(公告)号：US10593670B2

公开(公告)日：2020-03-17

申请号：US15697720

申请日：2017-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-yeol Song ,  Wan-don Kim ,  Oh-seong Kwon ,  Hyeok-jun Son ,  Sang-jin Hyun ,  Hoon-joo Na

IPC: H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

Abstract: Integrated circuit devices include a substrate including first and second fin-type active regions and first and second gate structures. The first gate structure includes first gate insulating layer on the first fin-type active region to cover upper surface and both side surfaces of the first fin-type active region, first gate electrode on the first gate insulating layer and has first thickness in first direction perpendicular to upper surface of the substrate, and second gate electrode on the first gate electrode. The second gate structure includes second gate insulating layer on the second fin-type active region to cover upper surface and both side surfaces of the second fin-type active region, third gate insulating layer on the second gate insulating layer, third gate electrode on the third gate insulating layer and has second thickness different from the first thickness in the first direction, and fourth gate electrode on the third gate electrode.

公开(公告)号：US09806075B2

公开(公告)日：2017-10-31

申请号：US15001283

申请日：2016-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-yeol Song ,  Wan-don Kim ,  Oh-seong Kwon ,  Hyeok-jun Son ,  Sang-jin Hyun ,  Hoon-joo Na

IPC: H01L27/088 ,  H01L29/06 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823462 ,  H01L29/0653 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

Abstract: Integrated circuit devices include a substrate including first and second fin-type active regions and first and second gate structures. The first gate structure includes first gate insulating layer on the first fin-type active region to cover upper surface and both side surfaces of the first fin-type active region, first gate electrode on the first gate insulating layer and has first thickness in first direction perpendicular to upper surface of the substrate, and second gate electrode on the first gate electrode. The second gate structure includes second gate insulating layer on the second fin-type active region to cover upper surface and both side surfaces of the second fin-type active region, third gate insulating layer on the second gate insulating layer, third gate electrode on the third gate insulating layer and has second thickness different from the first thickness in the first direction, and fourth gate electrode on the third gate electrode.

公开(公告)号：US09501424B2

公开(公告)日：2016-11-22

申请号：US14507833

申请日：2014-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Oh-seong Kwon ,  Hwan-soo Han ,  Jung-sik Choi ,  Sun-young Lim

IPC: G06F12/00 ,  G06F12/10 ,  G06F12/02

CPC classification number: G06F12/1027 ,  G06F12/0246 ,  G06F2212/1041 ,  G06F2212/202 ,  G06F2212/305

Abstract: Provided is a memory mapping method, and particularly provided is a nonvolatile main memory mapping method for managing a nonvolatile main memory. The nonvolatile memory mapping method includes: performing a system call in order to access a file page that is required to operate a process stored in a kernel area of a nonvolatile main memory, wherein both the file page and process are stored in the kernel area of the nonvolatile main memory; and mapping a physical address of the file page to a virtual address of a user area of the nonvolatile main memory.

Abstract translation: 提供了一种存储器映射方法，特别地提供了一种用于管理非易失性主存储器的非易失性主存储器映射方法。 非易失性存储器映射方法包括：执行系统调用以访问操作存储在非易失性主存储器的内核区域中的处理所需的文件页面，其中文件页面和处理都存储在非易失性主存储器的内核区域中 非易失性主存储器; 以及将所述文件页面的物理地址映射到所述非易失性主存储器的用户区域的虚拟地址。