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公开(公告)号：US10684979B2
公开(公告)日：2020-06-16
申请号：US16671601
申请日：2019-11-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sun-young Lim , Hui-chong Shin , In-su Choi , Young-ho Lee
Abstract: A memory system configured to support internal data (DQ) termination of a data buffer is provided. The memory system includes a first memory module, which is a target memory module accessed by an external device, and a second memory module, which is a non-target memory module not accessed by the external device. The second memory module performs the internal DQ termination on an internal data path during an internal operation mode in which data communication is performed by using the internal data path between internal memory chips. Signal reflection over the internal data path is reduced or prohibited due to the internal DQ termination, and thus, signal integrity is improved.
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公开(公告)号：US10169126B2
公开(公告)日：2019-01-01
申请号：US15688120
申请日：2017-08-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sun-young Lim , Young-jin Cho , Jang-seok Choi
Abstract: A memory module for reporting information about a fail in chip units, an operation of a memory module, and an operation of a memory controller are provided. The memory module includes: first to Mth memory chips (where M is an integer that is equal to or greater than 2) mounted on a module board and storing data, and an (M+1)th memory chip mounted on the module board and storing a parity code for recovering data of a memory chip in which a fail in chip units occurs among the first to Mth memory chips, wherein fail bits are generated from the first to (M+1)th memory chips through an intra-chip error detection operation, and fail information is output according to a result of calculating the fail bits from the first to (M+1)th memory chips.
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公开(公告)号：US10725672B2
公开(公告)日：2020-07-28
申请号：US16236750
申请日：2018-12-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sun-young Lim , Young-jin Cho , Jang-seok Choi
Abstract: A memory module for reporting information about a fail in chip units, an operation of a memory module, and an operation of a memory controller are provided. The memory module includes: first to Mth memory chips (where M is an integer that is equal to or greater than 2) mounted on a module board and storing data, and an (M+1)th memory chip mounted on the module board and storing a parity code for recovering data of a memory chip in which a fail in chip units occurs among the first to Mth memory chips, wherein fail bits are generated from the first to (M+1)th memory chips through an intra-chip error detection operation, and fail information is output according to a result of calculating the fail bits from the first to (M+1)th memory chips.
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Patent Agency Ranking
4.发明申请公开(公告)号：US20190138230A1
公开(公告)日：2019-05-09
申请号：US16236750
申请日：2018-12-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sun-young Lim , Young-jin Cho , Jang-seok Choi
IPC: G06F3/06
CPC classification number: G06F3/0619 , G06F3/0655 , G06F3/0679
Abstract: A memory module for reporting information about a fail in chip units, an operation of a memory module, and an operation of a memory controller are provided. The memory module includes: first to Mth memory chips (where M is an integer that is equal to or greater than 2) mounted on a module board and storing data, and an (M+1)th memory chip mounted on the module board and storing a parity code for recovering data of a memory chip in which a fail in chip units occurs among the first to Mth memory chips, wherein fail bits are generated from the first to (M+1)th memory chips through an intra-chip error detection operation, and fail information is output according to a result of calculating the fail bits from the first to (M+1)th memory chips.
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5.发明授权Memory mapping method of nonvolatile memory system and system for providing the memory mapping method 有权非易失性存储器系统的内存映射方法和提供内存映射方法的系统公开(公告)号：US09501424B2
公开(公告)日：2016-11-22
申请号：US14507833
申请日：2014-10-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Oh-seong Kwon , Hwan-soo Han , Jung-sik Choi , Sun-young Lim
CPC classification number: G06F12/1027 , G06F12/0246 , G06F2212/1041 , G06F2212/202 , G06F2212/305
Abstract: Provided is a memory mapping method, and particularly provided is a nonvolatile main memory mapping method for managing a nonvolatile main memory. The nonvolatile memory mapping method includes: performing a system call in order to access a file page that is required to operate a process stored in a kernel area of a nonvolatile main memory, wherein both the file page and process are stored in the kernel area of the nonvolatile main memory; and mapping a physical address of the file page to a virtual address of a user area of the nonvolatile main memory.
Abstract translation: 提供了一种存储器映射方法，特别地提供了一种用于管理非易失性主存储器的非易失性主存储器映射方法。 非易失性存储器映射方法包括：执行系统调用以访问操作存储在非易失性主存储器的内核区域中的处理所需的文件页面，其中文件页面和处理都存储在非易失性主存储器的内核区域中 非易失性主存储器; 以及将所述文件页面的物理地址映射到所述非易失性主存储器的用户区域的虚拟地址。
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公开(公告)号：US20200065289A1
公开(公告)日：2020-02-27
申请号：US16671601
申请日：2019-11-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sun-young Lim , Hui-chong Shin , ln-su Choi , Young-ho Lee
Abstract: A memory system configured to support internal data (DQ) termination of a data buffer is provided. The memory system includes a first memory module, which is a target memory module accessed by an external device, and a second memory module, which is a non-target memory module not accessed by the external device. The second memory module performs the internal DQ termination on an internal data path during an internal operation mode in which data communication is performed by using the internal data path between internal memory chips. Signal reflection over the internal data path is reduced or prohibited due to the internal DQ termination, and thus, signal integrity is improved.
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公开(公告)号：US20180329850A1
公开(公告)日：2018-11-15
申请号：US15916929
申请日：2018-03-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sun-young Lim , Hui-chong Shin , In-su Choi , Young-ho Lee
CPC classification number: G06F13/4086 , G06F3/0614 , G06F3/0656 , G06F3/0659 , G06F12/0246
Abstract: A memory system configured to support internal data (DQ) termination of a data buffer is provided. The memory system includes a first memory module, which is a target memory module accessed by an external device, and a second memory module, which is a non-target memory module not accessed by the external device. The second memory module performs the internal DQ termination on an internal data path during an internal operation mode in which data communication is performed by using the internal data path between internal memory chips. Signal reflection over the internal data path is reduced or prohibited due to the internal DQ termination, and thus, signal integrity is improved.
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8.发明申请MEMORY MAPPING METHOD OF NONVOLATILE MEMORY SYSTEM AND SYSTEM FOR PROVIDING THE MEMORY MAPPING METHOD 有权非易失性存储器系统的存储映射方法和用于提供存储器映射方法的系统公开(公告)号：US20150193354A1
公开(公告)日：2015-07-09
申请号：US14507833
申请日：2014-10-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Oh-seong Kwon , Hwan-soo Han , Jung-sik Choi , Sun-young Lim
IPC: G06F12/10
CPC classification number: G06F12/1027 , G06F12/0246 , G06F2212/1041 , G06F2212/202 , G06F2212/305
Abstract: Provided is a memory mapping method, and particularly provided is a nonvolatile main memory mapping method for managing a nonvolatile main memory. The nonvolatile memory mapping method includes: performing a system call in order to access a file page that is required to operate a process stored in a kernel area of a nonvolatile main memory, wherein both the file page and process are stored in the kernel area of the nonvolatile main memory; and mapping a physical address of the file page to a virtual address of a user area of the nonvolatile main memory.
Abstract translation: 提供了一种存储器映射方法，特别地提供了一种用于管理非易失性主存储器的非易失性主存储器映射方法。 非易失性存储器映射方法包括：执行系统调用以访问操作存储在非易失性主存储器的内核区域中的处理所需的文件页面，其中文件页面和处理都存储在非易失性主存储器的内核区域中 非易失性主存储器; 以及将所述文件页面的物理地址映射到所述非易失性主存储器的用户区域的虚拟地址。
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