公开(公告)号：US09831323B2

公开(公告)日：2017-11-28

申请号：US15267134

申请日：2016-09-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jorge A. Kittl ,  Ganesh Hegde ,  Robert Christopher Bowen ,  Borna J. Obradovic ,  Mark S. Rodder

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/201 ,  H01L29/06 ,  H01L21/02 ,  H01L21/306 ,  H01L21/04 ,  H01L21/465

CPC classification number: H01L29/6681 ,  H01L21/02439 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02485 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/465 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/7848 ,  H01L29/7853

Abstract: A stack for a semiconductor device and a method for making the stack are disclosed. The stack includes a plurality of sacrificial layers in which each sacrificial layer has a first lattice parameter; and at least one channel layer that has a second lattice parameter in which the first lattice parameter is less than or equal to the second lattice parameter, and each channel layer is disposed between and in contact with two sacrificial layers and includes a compressive strain or a neutral strain based on a difference between the first lattice parameter and the second lattice parameter.