公开(公告)号：US20160308000A1

公开(公告)日：2016-10-20

申请号：US15194066

申请日：2016-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junsoo KIM ,  Dongjin LEE ,  Dongsoo WOO ,  Jun-Bum LEE ,  SANG-IL HAN

IPC: H01L29/06 ,  H01L27/24 ,  H01L27/108 ,  H01L27/22 ,  H01L29/51 ,  H01L29/49

CPC classification number: H01L29/0653 ,  H01L27/088 ,  H01L27/10805 ,  H01L27/10814 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10891 ,  H01L27/228 ,  H01L27/2436 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device may include a semiconductor substrate including an active region defined by a trench, a device isolation layer provided in the trench to surround the active region, a gate electrode extending in a direction crossing the active region, and formed on the active region and the device isolation layer, and a gate insulating layer between the active region and the gate electrode. The active region may have a first conductivity type, and the device isolation layer may include a first silicon oxide layer on an inner surface of the first trench and a different layer, selected from one of first metal oxide layer and a negatively-charged layer, on the first silicon oxide layer.

公开(公告)号：US20210202371A1

公开(公告)日：2021-07-01

申请号：US17038085

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-IL HAN ,  SUNGHEE HAN

IPC: H01L23/522 ,  H01L23/00 ,  H01L23/528

Abstract: A semiconductor device comprises a substrate including a cell array region and a peripheral circuit region that surrounds the cell array region. The cell array region includes landing pads disposed on the substrate and first bottom electrodes disposed on and connected to corresponding landing pads. The peripheral circuit region includes conductive lines disposed on the substrate, a first conductive pad disposed on and spaced apart from the conductive lines, a dielectric pattern disposed between the conductive lines and the first conductive pad, and a plurality of second bottom electrodes disposed on and connected in common to the first conductive pad. A height of each of the first bottom electrodes is greater than a height of each of the second bottom electrodes. Top surfaces of the first bottom electrodes are located at a same level as a level of top surfaces of the second bottom electrodes.

公开(公告)号：US20240251549A1

公开(公告)日：2024-07-25

申请号：US18456655

申请日：2023-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGGYU KO ,  HYUCKCHAI JUNG ,  SANG-IL HAN ,  JUNGJIN PARK ,  SUHYUN KIM ,  CHUL LEE ,  SUNGHO JANG ,  HYEONGWON JANG

IPC: H10B12/00

CPC classification number: H10B12/50 ,  H10B12/315 ,  H10B12/482 ,  H10B12/485 ,  H10B12/488

Abstract: A semiconductor device includes a substrate including a peripheral active pattern defined by a device isolation layer, a gate structure on the peripheral active pattern, and a gate spacer covering at least a portion of a side surface of the gate structure. The gate structure includes an insulating pattern structure and a metal pattern structure on the insulating pattern structure. The insulating pattern structure includes a recess having a maximum depth in a first direction parallel to a top surface of the substrate at a first height. The insulating pattern structure includes a first gate insulating pattern and a high-k dielectric layer, which are sequentially stacked on the top surface of the substrate. The gate spacer includes a protrusion inserted in the recess.

公开(公告)号：US20210257374A1

公开(公告)日：2021-08-19

申请号：US17035082

申请日：2020-09-28

Applicant: SAMSUNG ELECTRONICS co., LTD.

Inventor： KI SEOK LEE ,  Jae Hyun YOON ,  Kyu Jin KIM ,  Keun Nam KIM ,  Hui-Jung KIM ,  Kyu Hyun LEE ,  SANG-IL HAN ,  Sung Hee HAN ,  Yoo Sang HWANG

IPC: H01L27/108

Abstract: A includes an element isolation region, a first active region bounded by the element isolation region and that extends in a first direction and includes first and second parts disposed at a first level, and a third part disposed at a second level located above the first level, and a gate electrode disposed inside each of the element isolation region and the first active region and that extends in a second direction different from the first direction. The second part is spaced apart in the first direction from the first part, and the third part contacts each of the first and second parts. A first width in the second direction of the first part is less than a second width in the second direction of the third part.

公开(公告)号：US20200209903A1

公开(公告)日：2020-07-02

申请号：US16711292

申请日：2019-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-IL HAN ,  JI-HONG KIM ,  KWAN-BIN YIM ,  YOUNG-MIN KIM ,  HAN-JAE LEE ,  SU-IL JIN

IPC: G05F1/575 ,  H02M3/157 ,  H02M3/335 ,  H02M1/084

Abstract: An electronic device includes: a switching regulator configured to generate a conversion voltage with respect to an input voltage, based on a switching signal of a first frequency, and output the conversion voltage; a stabilization circuit including a capacitor element connected to a load device via a first node and configured to generate a load voltage by stabilizing the conversion voltage by using the capacitor element and output the load voltage to the load device; a frequency sensing circuit configured to sense a frequency of the load voltage and output sensing information about the frequency of the load voltage; and a frequency booster circuit configured to form a first current path connected to the first node, based on the sensing information.