公开(公告)号：US20190079698A1

公开(公告)日：2019-03-14

申请号：US15960644

申请日：2018-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHULSEUNG LEE ,  SEONGHOON WOO ,  KYUWOOK HAN ,  DAEHYUN KIM

IPC: G06F3/06 ,  G06F13/28

Abstract: A storage device includes a first memory device, a second memory device, and a controller. The first memory device and the second memory device share the same channel to communicate with the controller. Communication between the first memory device and the controller and communication between the second memory device and the controller are mutually exclusive. When the controller receives a read request directed to the second memory device while the controller processes a direct memory access (DMA) operation directed to the first memory device, the controller suspends the DMA operation and transmits a read command associated with the read request to the second memory device.

公开(公告)号：US20240248643A1

公开(公告)日：2024-07-25

申请号：US18230453

申请日：2023-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： TAE-EUN PARK ,  SUHYUN KIM ,  HYUNSOOK LEE ,  HAEJONG JANG ,  SEONGHOON WOO

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0683 ,  G06F3/0604

Abstract: A storage device is provided. The storage device includes: a plurality of memory devices configured to output status data indicating a busy state indicating an internal operation is being performed or a ready state; and an interface circuit configured to receive a command for reading the status data of the plurality of memory devices, receive the status data of each of the plurality of memory devices from the plurality of memory devices, and output entire status data indicating statuses of the plurality of memory devices based on the status data of each of the plurality of memory devices.

公开(公告)号：US20210055888A1

公开(公告)日：2021-02-25

申请号：US17092860

申请日：2020-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHULSEUNG LEE ,  SEONGHOON WOO ,  KYUWOOK HAN ,  DAEHYUN KIM

IPC: G06F3/06 ,  G06F13/28

Abstract: A storage device includes a first memory device, a second memory device, and a controller. The first memory device and the second memory device share the same channel to communicate with the controller. Communication between the first memory device and the controller and communication between the second memory device and the controller are mutually exclusive. When the controller receives a read request directed to the second memory device while the controller processes a direct memory access (DMA) operation directed to the first memory device, the controller suspends the DMA operation and transmits a read command associated with the read request to the second memory device.

公开(公告)号：US20180150255A1

公开(公告)日：2018-05-31

申请号：US15804226

申请日：2017-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEONGHOON WOO ,  SOON SUK HWANG

IPC: G06F3/06 ,  G06F11/10 ,  G11C29/52 ,  G06F13/28

CPC classification number: G06F3/0635 ,  G06F3/0611 ,  G06F3/064 ,  G06F3/0688 ,  G06F11/1048 ,  G06F11/1068 ,  G06F13/28 ,  G11C29/52 ,  G11C2029/0411

Abstract: A storage device includes nonvolatile memory devices arranged in groups, and a controller connected with the groups respectively through channels. The controller is configured to generate an access request for a nonvolatile memory device among the nonvolatile memory devices, and transmit, based on the access request, access requests respectively to two or more groups, among the groups, respectively through two or more channels, among the channels.

公开(公告)号：US20170206030A1

公开(公告)日：2017-07-20

申请号：US15404229

申请日：2017-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEONGHOON WOO ,  Haksun Kim ,  Taemin Jeong ,  Kyuwook Han ,  Soon Suk Hwang

IPC: G06F3/06 ,  G06F12/14

Abstract: A storage device includes a nonvolatile memory device, and a controller configured to control the nonvolatile memory device based on metadata. The controller encrypts the metadata and loads the encrypted metadata on a random access memory of an external host device.

公开(公告)号：US20240264772A1

公开(公告)日：2024-08-08

申请号：US18534660

申请日：2023-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANG YOUNG YE ,  SEONGHOON WOO ,  HAEJONG JANG

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0619 ,  G06F3/0679

Abstract: An operation method of a storage device connected to a host may include fetching one or more first commands from a first submission queue of the host by performing a first command fetch operation, processing one or more remaining commands other than the last command of the one or more first commands when a last command among the one or more first is a first fused commands, fetching one or more second commands from a second submission queue of the host by performing a second command fetch operation, processing the one or more second commands, and fetching at least two third commands from the first submission queue of the host by performing a third command fetch operation. The at least two third commands may include the first fused command and a second fused command corresponding to the first fused command.

公开(公告)号：US20180113803A1

公开(公告)日：2018-04-26

申请号：US15706967

申请日：2017-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DAEHYUN KIM ,  BOKYOUNG KIM ,  SEONGHOON WOO

IPC: G06F12/02 ,  G06F3/06 ,  G11C16/10 ,  G11C16/26

CPC classification number: G06F12/0246 ,  G06F3/061 ,  G06F3/0659 ,  G06F3/0679 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C16/32

Abstract: A method, executed by a memory controller, of controlling a nonvolatile memory device having first and second planes includes transmitting a first command included in a command queue to the nonvolatile memory device. A block address of a second command is compared with a block address of a third command, when the third command is queued ahead of the second command in the command queue. The second command is selectively transmitted to the nonvolatile memory device prior to the third command based on the comparison result.

公开(公告)号：US20140115234A1

公开(公告)日：2014-04-24

申请号：US13659235

申请日：2012-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEONGHOON WOO ,  HAKSUN KIM

IPC: G06F12/02

CPC classification number: G06F12/0246

Abstract: A method of programming a nonvolatile memory device comprises generating write data and metadata associated with the write data, generating a seed associated with the write data and scrambling the generated seed, randomizing the write data and the metadata using the scrambled seed, and programming the randomized write data, the randomized metadata, and the scrambled seed in the nonvolatile memory device.

Abstract translation: 一种对非易失性存储器件进行编程的方法包括：生成与写入数据相关联的写入数据和元数据，产生与写入数据相关联的种子并加扰生成的种子，使用加扰种子对写入数据和元数据进行随机化，以及编程随机化 将数据，随机化元数据和加扰种子写入非易失性存储器件中。