公开(公告)号：US10469134B2

公开(公告)日：2019-11-05

申请号：US13665581

申请日：2012-10-31

申请人： Samsung Electronics Co., Ltd.

发明人： Ki-Il Kim ,  Hyo-Jin Lee ,  Youn-Sun Kim ,  Young-Bum Kim ,  Hyoung-Ju Ji ,  Seung-Hoon Choi

IPC分类号： H04L5/00 ,  H04B7/024

摘要： A feedback method and apparatus are provided for Cooperative Multi-Point (CoMP) communication in a communication system. The method includes checking a number of feedback allocations configured by Radio Resource Control (RRC) signaling, determining a number of bits of an aperiodic feedback indicator based on the checked number of feedback allocations, receiving Downlink Control Information (DCI) including the aperiodic feedback indicator, interpreting the aperiodic feedback indicator, based on the determined number of bits of the aperiodic feedback indicator, and performing aperiodic feedback of at least one feedback allocation, based on the aperiodic feedback indicator.

公开(公告)号：US09722685B2

公开(公告)日：2017-08-01

申请号：US14861520

申请日：2015-09-22

申请人： Samsung Electronics Co., Ltd.

发明人： Hyo-Jin Lee ,  Youn-Sun Kim ,  Ki-Il Kim

IPC分类号： H04B7/06 ,  H04W24/00 ,  H04L5/00 ,  H04W72/04 ,  H04W72/08 ,  H04B17/345 ,  H04B17/24 ,  H04W88/02 ,  H04W88/08

摘要： A method and user equipment for transmitting channel state information (CSI) are provided. The method includes identifying a first CSI configuration with a first channel measurement information, a first interference measurement information, and a first information for a period and an offset; identifying a second CSI configuration with a second channel measurement information, a second interference measurement information, and a second information for a period and an offset; generating a first CSI based on the first channel measurement information and the first interference measurement information; generating a second CSI based on the second channel measurement information and the second interference measurement information; transmitting the first CSI for the first CSI configuration based on the first information; and transmitting the second CSI for the second CSI configuration based on the second information.

公开(公告)号：US09711504B2

公开(公告)日：2017-07-18

申请号：US15155744

申请日：2016-05-16

申请人： Samsung Electronics Co., Ltd.

发明人： Jung-Gun You ,  Ki-Il Kim ,  Gi-Gwan Park ,  Sug-Hyun Sung ,  Myung-Yoon Um

IPC分类号： H01L27/088 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L27/0886 ,  H01L21/823412 ,  H01L21/823431 ,  H01L27/0207 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7854

摘要： A semiconductor device includes a substrate including a first trench, a first fin pattern on the substrate that is defined by the first trench, a gate electrode on the substrate, and a field insulating layer on the substrate. The first fin pattern includes an upper part on a lower part. The first fin pattern includes a first sidewall and a second sidewall opposite each other. The first sidewall is concave along the lower part of the first fin pattern. The second sidewall is tilted along the lower part of the first fin pattern. The field insulating layer surrounds the lower part of the first fin pattern. The gate electrode surrounds the upper part of the first fin pattern.

公开(公告)号：US20170084616A1

公开(公告)日：2017-03-23

申请号：US15213533

申请日：2016-07-19

申请人： Samsung Electronics Co., Ltd.

发明人： Ki-Il Kim ,  Jung-Gun You ,  Gi-Gwan Park

IPC分类号： H01L27/11 ,  H01L29/78 ,  H01L27/088 ,  H01L29/06

CPC分类号： H01L27/1104 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7854

摘要： A semiconductor device can include a field insulating film on a substrate and a fin-type pattern of a particular material, on the substrate, having a first sidewall and an opposing second sidewall. The fin-type pattern can include a first portion of the fin-type pattern that protrudes from an upper surface of the field insulating film and a second portion of the fin-type pattern disposed on the first portion. A third portion of the fin-type pattern can be disposed on the second portion where the third portion can be capped by a top rounded surface of the fin-type pattern and the first sidewall can have an undulated profile that spans the first, second and third portions.

公开(公告)号：US09564959B2

公开(公告)日：2017-02-07

申请号：US14680549

申请日：2015-04-07

申请人： Samsung Electronics Co., Ltd.

发明人： Hyo-Jin Lee ,  Youn-Sun Kim ,  Ki-Il Kim

IPC分类号： H04B7/06 ,  H04W24/00 ,  H04L5/00 ,  H04W72/04 ,  H04W72/08 ,  H04B17/345 ,  H04B17/24 ,  H04W88/02 ,  H04W88/08

CPC分类号： H04B7/0626 ,  H04B17/24 ,  H04B17/345 ,  H04L5/0035 ,  H04L5/0053 ,  H04L5/0057 ,  H04W24/00 ,  H04W72/0413 ,  H04W72/082 ,  H04W88/02 ,  H04W88/08

摘要： A method and apparatus for transmitting feedback information by a User Equipment (UE) in a mobile communication system are provided. The method includes receiving information about at least one Channel State Information Reference Signal (CSI-RS); performing channel estimation based on the information about at least one CSI-RS; receiving information about at least one feedback; and transmitting at least one feedback including a channel estimation result using the information about at least one feedback, wherein the information about at least one feedback includes information about a transmission timing and a feedback mode for at least one feedback.

摘要翻译： 提供了一种用于在移动通信系统中由用户设备（UE）发送反馈信息的方法和装置。 该方法包括接收关于至少一个信道状态信息参考信号（CSI-RS）的信息; 基于关于至少一个CSI-RS的信息执行信道估计; 接收关于至少一个反馈的信息; 以及使用关于至少一个反馈的信息来发送包括信道估计结果的至少一个反馈，其中关于至少一个反馈的信息包括关于用于至少一个反馈的传输定时和反馈模式的信息。

公开(公告)号：US09516632B2

公开(公告)日：2016-12-06

申请号：US13740008

申请日：2013-01-11

申请人： Samsung Electronics Co. Ltd.

发明人： Hyo-Jin Lee ,  Youn-Sun Kim ,  Ki-Il Kim ,  Hyoung-Ju Ji ,  Joon-Young Cho ,  Ju-Ho Lee

IPC分类号： H04W72/04 ,  H04L5/00

CPC分类号： H04W72/042 ,  H04L5/0007 ,  H04L5/003 ,  H04L5/0035 ,  H04L5/0048 ,  H04L5/0073 ,  H04W72/04

摘要： An apparatus and a method for transmitting/receiving downlink data channel signal transmission information in a cellular radio communication system using a Cooperative Multi-Point (COMP) scheme are provided. In the downlink data channel signal transmission information transmission method, a Base Station (BS) transmits downlink data channel signal transmission information including information related to Resource Elements (REs) scheduled for a downlink data channel signal transmission to a User Equipment (UE), and transmits downlink data channel signal non-transmission information including information related to REs through which a downlink data channel signal is not transmitted among the REs scheduled for the downlink data channel signal transmission to the UE.

摘要翻译： 提供了一种在使用协同多点（COMP）方案的蜂窝无线电通信系统中发送/接收下行链路数据信道信号传输信息的装置和方法。 在下行链路数据信道传输信息传输方法中，基站（BS）向用户设备（UE）发送下行数据信道传输信息，该信息传输信息包括与针对下行链路数据信道信号传输调度的资源元素（RE）相关的信息，以及 在针对下行链路数据信道信号发送调度的RE中向UE发送包括与不发送下行链路数据信道信号的RE相关的信息的下行数据信道信号非传输信息。

公开(公告)号：US20140269596A1

公开(公告)日：2014-09-18

申请号：US14349875

申请日：2012-10-05

申请人： Samsung Electronics Co., Ltd.

发明人： Youn-Sun Kim ,  Ki-Il Kim ,  Ju-Ho Lee ,  Hyo-Jin Lee ,  Joon-Young Cho ,  Seung-Hoon Choi

IPC分类号： H04W72/08

CPC分类号： H04W72/085 ,  H04B7/06 ,  H04B7/0626 ,  H04B7/063 ,  H04B7/0632 ,  H04B7/0639 ,  H04W72/042

摘要： Disclosed is a method and apparatus for transmitting channel state information (CSI) by a user equipment in a mobile communication system. The method includes receiving a CSI-reference signal (CSI-RS) for measuring a state of a downlink channel and a CSI feedback-related configuration from a base station (BS); determining a channel quality indication (CQI) for at least one transmission point and control information for determining a CQI for multiple transmission points, based on the received CSI-RS and CSI feedback-related configuration; and transmitting the determined CQI for the at least one transmission point and control information to the BS.

摘要翻译： 公开了一种用于在移动通信系统中由用户设备发送信道状态信息（CSI）的方法和装置。 该方法包括从基站（BS）接收用于测量下行链路信道的状态的CSI参考信号（CSI-RS）和CSI反馈相关配置; 基于所接收的CSI-RS和CSI反馈相关配置，确定用于至少一个传输点的信道质量指示（CQI）和用于确定多个传输点的CQI的控制信息; 以及将所确定的所述至少一个传输点的CQI和控制信息发送给所述BS。

公开(公告)号：US12132105B2

公开(公告)日：2024-10-29

申请号：US17571949

申请日：2022-01-10

申请人： Samsung Electronics Co., Ltd.

发明人： Hojun Choi ,  Ji Seong Kim ,  Min Cheol Oh ,  Ki-Il Kim

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/7827 ,  H01L21/823814 ,  H01L21/823885 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/42368 ,  H01L29/66666

摘要： There is provided a semiconductor device capable of improving electrical characteristics and integration density. The semiconductor device includes an active pattern protruding from a substrate, the active pattern including long sidewalls extending in a first direction and opposite to each other in a second direction, a lower epitaxial pattern on the substrate and covering a part of the active pattern, a gate electrode on the lower epitaxial pattern and extending along the long sidewalls of the active pattern, and an upper epitaxial pattern on the active pattern and connected to an upper surface of the active pattern. The active pattern includes short sidewalls connecting with the long sidewalls of the active pattern, and at least one of the short sidewalls of the active pattern has a curved surface.

公开(公告)号：US11923365B2

公开(公告)日：2024-03-05

申请号：US17387178

申请日：2021-07-28

申请人： Samsung Electronics Co., Ltd.

发明人： Jeonghyuk Yim ,  Ki-Il Kim ,  Gil Hwan Son ,  Kang Ill Seo

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L27/0922 ,  H01L21/82385 ,  H01L21/823857 ,  H01L21/823871 ,  H01L29/0665 ,  H01L29/401 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/78645

摘要： Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.

公开(公告)号：US11843001B2

公开(公告)日：2023-12-12

申请号：US17380999

申请日：2021-07-20

申请人： Samsung Electronics Co., Ltd.

发明人： Byounghak Hong ,  Seunghyun Song ,  Ki-Il Kim ,  Gunho Jo ,  Kang-Ill Seo

IPC分类号： H04L45/745 ,  H04L12/46 ,  H04L45/52 ,  H01L27/12 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/822 ,  H01L21/84

CPC分类号： H01L27/1203 ,  H01L21/8221 ,  H01L21/823412 ,  H01L21/823456 ,  H01L21/84 ,  H01L27/088

摘要： Nanosheet transistor devices are provided. A nanosheet transistor device includes a transistor stack that includes a lower nanosheet transistor having a first nanosheet width and a lower gate width. The transistor stack also includes an upper nanosheet transistor that is on the lower nanosheet transistor and that has a second nanosheet width and an upper gate width that are different from the first nanosheet width and the lower gate width, respectively. Related methods of forming a nanosheet transistor device are also provided.