公开(公告)号：US09966274B2

公开(公告)日：2018-05-08

申请号：US15598016

申请日：2017-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gon-jun Kim ,  Sam Hyungsam Kim ,  Sangheon Lee

IPC: H01L21/311 ,  H01J37/32 ,  C23C16/455 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  C23C16/45565 ,  C23C16/45591 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3065

Abstract: Provided are a method of generating plasma and a method of fabricating a semiconductor device including the method, which may improve selectivity in an etching process and minimize damage to layers. The method of generating plasma includes generating first plasma by supplying at least one first process gas into a first remote plasma source (RPS) and applying first energy having a first power at a first duty ratio, and generating second plasma by supplying at least one second process gas into a second RPS and applying second energy having a second power at a second duty ratio.

公开(公告)号：US20170256415A1

公开(公告)日：2017-09-07

申请号：US15598016

申请日：2017-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gon-jun Kim ,  Sam Hyungsam Kim ,  Sangheon Lee

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  C23C16/45565 ,  C23C16/45591 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3065

Abstract: Provided are a method of generating plasma and a method of fabricating a semiconductor device including the method, which may improve selectivity in an etching process and minimize damage to layers. The method of generating plasma includes generating first plasma by supplying at least one first process gas into a first remote plasma source (RPS) and applying first energy having a first power at a first duty ratio, and generating second plasma by supplying at least one second process gas into a second RPS and applying second energy having a second power at a second duty ratio.