公开(公告)号：US10304990B2

公开(公告)日：2019-05-28

申请号：US15341259

申请日：2016-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon Han ,  Dong Yul Lee ,  Seung Hyun Kim ,  Jang Mi Kim ,  Suk Ho Yoon ,  Sang Jun Lee

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/14

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

公开(公告)号：US11348263B2

公开(公告)日：2022-05-31

申请号：US16509033

申请日：2019-07-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Jun Lee

IPC: G06T7/536 ,  G06T3/60 ,  G06T7/73

Abstract: Provided is a method and apparatus for detecting a vanishing point in a driving image of a vehicle. The method includes: receiving the driving image; generating a probability map, comprising probability information about a position of the vanishing point in the driving image, from the driving image; detecting a vanishing point on the driving image by applying smoothing regression, which softens a boundary region of the vanishing point, to the probability map; and processing a task for driving the vehicle by converting an orientation of the driving image based on the vanishing point.

公开(公告)号：US09800920B2

公开(公告)日：2017-10-24

申请号：US14877224

申请日：2015-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Jun Lee ,  Ki Suk Kim ,  Hyun Kyu Yun ,  Jee-Hoon Ka

IPC: H04N21/41 ,  H04N21/422 ,  H04N21/4363 ,  G06F3/14

CPC classification number: H04N21/4122 ,  G06F3/1438 ,  G06F3/1454 ,  G09G2320/0261 ,  G09G2370/042 ,  H04N21/422 ,  H04N21/43637

Abstract: A display device, which includes a mobile display which is paired and connected with a main display, receives and stores main image information transmitted from the main display, and when its own motion is detected, continuously displays an image being displayed on the main display based on the main image information.

公开(公告)号：US09171997B2

公开(公告)日：2015-10-27

申请号：US14255854

申请日：2014-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Deok Sim ,  Sang Jo Kim ,  Sung Tae Kim ,  Young Sun Kim ,  Seong Ju Park ,  Suk Ho Yoon ,  Sang Jun Lee

IPC: H01L31/0328 ,  H01L27/15 ,  H01L21/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/38

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/32 ,  H01L33/382

Abstract: A semiconductor light emitting device is provided including a first conductivity-type semiconductor layer, an active layer including at least one quantum barrier layer made of InxGa(1-x)N, wherein 0≦x

Abstract translation: 提供了一种半导体发光器件，其包括第一导电型半导体层，包括由In x Ga（1-x）N制成的至少一个量子势垒层的有源层，其中0＆lt; 1E; x

公开(公告)号：US09502605B2

公开(公告)日：2016-11-22

申请号：US14714223

申请日：2015-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon Han ,  Dong Yul Lee ,  Seung Hyun Kim ,  Jang Mi Kim ,  Suk Ho Yoon ,  Sang Jun Lee

IPC: H01L33/00 ,  H01L33/06

CPC classification number: H01L33/0075 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

Abstract translation: 一种制造半导体发光器件的方法包括：形成第一导电型半导体层，通过在第一导电型半导体层上交替地形成多个量子阱层和多个量子势垒层来形成有源层，并形成第二导电型半导体层 导电型半导体层。 多个量子势垒层包括与第一导电类型半导体层相邻的至少一个第一量子势垒层和与第二导电类型半导体层相邻的至少一个第二量子势垒层。 活性层的形成包括允许至少一个第一量子势垒层在第一温度下生长并允许至少一个第二量子势垒层在低于第一温度的第二温度下生长。