公开(公告)号：US09502605B2

公开(公告)日：2016-11-22

申请号：US14714223

申请日：2015-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon Han ,  Dong Yul Lee ,  Seung Hyun Kim ,  Jang Mi Kim ,  Suk Ho Yoon ,  Sang Jun Lee

IPC: H01L33/00 ,  H01L33/06

CPC classification number: H01L33/0075 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

Abstract translation: 一种制造半导体发光器件的方法包括：形成第一导电型半导体层，通过在第一导电型半导体层上交替地形成多个量子阱层和多个量子势垒层来形成有源层，并形成第二导电型半导体层 导电型半导体层。 多个量子势垒层包括与第一导电类型半导体层相邻的至少一个第一量子势垒层和与第二导电类型半导体层相邻的至少一个第二量子势垒层。 活性层的形成包括允许至少一个第一量子势垒层在第一温度下生长并允许至少一个第二量子势垒层在低于第一温度的第二温度下生长。

公开(公告)号：US10134949B2

公开(公告)日：2018-11-20

申请号：US15678462

申请日：2017-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jai Won Jean ,  Min Ho Kim ,  Min Hwan Kim ,  Jang Mi Kim ,  Chul Min Kim ,  Jeong Wook Lee ,  Jae Deok Jeong ,  Yong Seok Choi

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12

Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.

公开(公告)号：US10304990B2

公开(公告)日：2019-05-28

申请号：US15341259

申请日：2016-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon Han ,  Dong Yul Lee ,  Seung Hyun Kim ,  Jang Mi Kim ,  Suk Ho Yoon ,  Sang Jun Lee

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/14

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

公开(公告)号：US09564316B2

公开(公告)日：2017-02-07

申请号：US14578940

申请日：2014-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Yul Lee ,  Sang Heon Han ,  Seung Hyun Kim ,  Jang Mi Kim ,  William Solari ,  Hyun Wook Shim ,  Suk Ho Yoon

IPC: H01L21/00 ,  H01L29/20 ,  H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  H01L33/00

CPC classification number: H01L21/0254 ,  C23C16/34 ,  C23C16/4404 ,  H01L21/02107 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02496 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007

Abstract: A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.

Abstract translation: 一种制造半导体器件的方法包括通过向处理室提供铝（Al）源，与处理室中的铝源接触的表面，在处理室的表面上形成铝化合物膜; 在形成铝化合物膜之后，在设置在处理室中的基座上设置晶片; 并在晶片上形成用于半导体器件的薄膜。