公开(公告)号：US12029134B2

公开(公告)日：2024-07-02

申请号：US17402960

申请日：2021-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghwan Park ,  Younghyun Kim ,  Jaehoon Kim ,  Heeju Shin ,  Sechung Oh

IPC: H10N50/85 ,  H01L23/522 ,  H01L23/528 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80

CPC classification number: H10N50/10 ,  H01L23/5226 ,  H01L23/5283 ,  H10B61/22 ,  H10N50/80 ,  H10N50/85

Abstract: A semiconductor device including a substrate; a lower electrode on the substrate; a magnetic tunnel junction structure on the lower electrode, the magnetic tunnel junction structure including a pinned layer, a tunnel barrier layer, and a free layer which are sequentially stacked; an upper electrode on the magnetic tunnel junction structure; and an oxidation control layer between the free layer and the upper electrode, the oxidation control layer including at least one filter layer and at least one oxide layer, wherein the at least one filter layer includes MoCoFe.

公开(公告)号：US11944014B2

公开(公告)日：2024-03-26

申请号：US17358435

申请日：2021-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghwan Park ,  Jaehoon Kim ,  Yongsung Park ,  Hyeonwoo Seo ,  Sechung Oh ,  Hyun Cho

IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H10B61/22 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetic memory device including a magnetic tunnel junction is provided. The magnetic tunnel junction includes a fixed layer, a polarization enhancement structure on the fixed layer, a tunnel barrier layer on the polarization enhancement structure, and a free layer on the tunnel barrier layer, wherein the polarization enhancement structure includes a plurality of polarization enhancement layers and at least one spacer layer which separates the plurality of polarization enhancement layers from each other. A thickness of each of the plurality of polarization enhancement layers is from 5 Å to about 20 Å, and a thickness of the at least one spacer layer is from about 2 Å to about 15 Å.

公开(公告)号：US12190928B2

公开(公告)日：2025-01-07

申请号：US17970788

申请日：2022-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younghyun Kim ,  Sechung Oh ,  Heeju Shin ,  Jaehoon Kim ,  Sanghwan Park ,  Junghwan Park

IPC: G11C11/00 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetoresistive random access memory device includes a pinned layer; a tunnel barrier layer on the pinned layer; a free layer structure on the tunnel barrier layer, the free layer structure including a plurality of magnetic layers and a plurality of metal insertion layers between the magnetic layers; and an upper oxide layer on the free layer structure, wherein each of the metal insertion layers includes a non-magnetic metal material doped with a magnetic material, and the metal insertion layers are spaced apart from each other.

公开(公告)号：US20240292491A1

公开(公告)日：2024-08-29

申请号：US18397546

申请日：2023-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoungmin Seo ,  Laehoon Kim ,  Sanghwan Park ,  Satish Kumar Reddy Palli

IPC: H04W76/45 ,  H04W4/10 ,  H04W88/04

CPC classification number: H04W76/45 ,  H04W4/10 ,  H04W88/04

Abstract: The present disclosure relates to electronic devices that provide walkie-talkie service. One example electronic device includes a communication chip including a Bluetooth circuit for supporting Bluetooth communication, and a processor including a walkie-talkie circuit for performing a walkie-talkie operation with a walkie-talkie group, including a plurality of Bluetooth devices, by using the Bluetooth circuit. The walkie-talkie circuit includes a walkie-talkie control circuit configured to generate setting information related to the walkie-talkie operation, and a walkie-talkie processing circuit configured to set values of parameters of a plurality of operations for the walkie-talkie operation based on the setting information, and generate second walkie-talkie data by processing first walkie-talkie data received from the walkie-talkie group through the plurality of operations.

公开(公告)号：US20230371392A1

公开(公告)日：2023-11-16

申请号：US18118571

申请日：2023-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonyoung LEE ,  Sanghwan Park ,  Yongsung Park ,  Jeongheon Park ,  Hyeonwoo Seo

IPC: H10N50/10 ,  H10B61/00 ,  H10N50/85 ,  H01L23/528 ,  H10B80/00 ,  H01L25/16

CPC classification number: H10N50/10 ,  H10B61/22 ,  H10N50/85 ,  H01L23/5283 ,  H10B80/00 ,  H01L25/16

Abstract: A magnetoresistive memory device includes: a lower electrode; a lower magnetic material layer on the lower electrode; a tunnel barrier layer on the lower magnetic material layer; an upper magnetic material layer on the tunnel barrier layer; a cap structure, on the upper magnetic material layer, including first layers and second layers, alternately layered; a cap conductive layer on the cap structure; and an upper electrode on the cap conductive layer, wherein the first layers include a first material including a non-magnetic material, and the second layers include a second material including a magnetic material.

公开(公告)号：US20230074141A1

公开(公告)日：2023-03-09

申请号：US17720591

申请日：2022-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghwan Park ,  Younghyun Kim ,  Jaehoon Kim ,  Jeongheon Park ,  Sechung Oh

IPC: H01L43/02 ,  H01F10/32 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic device includes a seed pattern, a reference magnetic structure on the seed pattern, a free magnetic pattern on the reference magnetic structure, and a tunnel barrier between the reference magnetic structure and the free magnetic pattern. The reference magnetic structure includes a synthetic antiferromagnetic (SAF) structure including a first fixed pattern in contact with an upper surface of the seed pattern, an antiferromagnetic coupling pattern in contact with an upper surface of the first fixed pattern, and a second fixed pattern in contact with an upper surface of the antiferromagnetic coupling pattern; a nonmagnetic pattern in contact with an upper surface of the second fixed pattern; and a polarization reinforcement magnetic pattern in contact with an upper surface of the nonmagnetic pattern.

公开(公告)号：US20220158085A1

公开(公告)日：2022-05-19

申请号：US17358435

申请日：2021-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghwan Park ,  Jaehoon Kim ,  Yongsung Park ,  Hyeonwoo Seo ,  Sechung Oh ,  Hyun Cho

IPC: H01L43/08 ,  H01L43/02 ,  H01L27/22 ,  H01L43/10

Abstract: A magnetic memory device including a magnetic tunnel junction is provided. The magnetic tunnel junction includes a fixed layer, a polarization enhancement structure on the fixed layer, a tunnel barrier layer on the polarization enhancement structure, and a free layer on the tunnel barrier layer, wherein the polarization enhancement structure includes a plurality of polarization enhancement layers and at least one spacer layer which separates the plurality of polarization enhancement layers from each other. A thickness of each of the plurality of polarization enhancement layers is from 5 Å to about 20 Å, and a thickness of the at least one spacer layer is from about 2 Å to about 15 Å.