公开(公告)号：US20210043828A1

公开(公告)日：2021-02-11

申请号：US16793336

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungil HONG ,  Younghyun KIM ,  Junghwan PARK ,  Sechung OH ,  Jungmin LEE

IPC: H01L43/02 ,  H01L27/22 ,  H01L27/24 ,  H01L27/1159 ,  H01L43/08 ,  H01L43/12

Abstract: A semiconductor device includes a plurality of magnetic tunnel junction (MTJ) structures in an interlayer insulating layer on a substrate. A blocking layer is on the interlayer insulating layer and the plurality of MTJ structures. An upper insulating layer is on the blocking layer. An upper interconnection is on the upper insulating layer. An upper plug is connected to the upper interconnection and a corresponding one of the plurality of MTJ structures and extends into the upper insulating layer and the blocking layer. The blocking layer includes a material having a higher absorbance constant than the upper insulating layer.

公开(公告)号：US20220238795A1

公开(公告)日：2022-07-28

申请号：US17402960

申请日：2021-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghwan PARK ,  Younghyun KIM ,  Jaehoon KIM ,  Heeju SHIN ,  Sechung OH

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L23/522 ,  H01L23/528

Abstract: A semiconductor device including a substrate; a lower electrode on the substrate; a magnetic tunnel junction structure on the lower electrode, the magnetic tunnel junction structure including a pinned layer, a tunnel barrier layer, and a free layer which are sequentially stacked; an upper electrode on the magnetic tunnel junction structure; and an oxidation control layer between the free layer and the upper electrode, the oxidation control layer including at least one filter layer and at least one oxide layer, wherein the at least one filter layer includes MoCoFe.

公开(公告)号：US20210040616A1

公开(公告)日：2021-02-11

申请号：US16891177

申请日：2020-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghwan PARK ,  Younghyun KIM ,  Sechung OH ,  Jungmin LEE ,  Kyungil HONG

IPC: C23C16/455 ,  B05B1/18 ,  C23C16/458 ,  C23C16/06 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12

Abstract: A shower head for a substrate treating apparatus and a substrate treating apparatus including the shower head, the shower head including a central head at a central portion of the shower head, the central head having a plurality of central holes through which a first injection gas is injectable; and a peripheral head at a peripheral portion of the shower head to enclose the central head, the peripheral head having a plurality of peripheral holes through which a second injection gas is injectable, wherein a total hole area of the peripheral holes is smaller than a total hole area of the central holes.

公开(公告)号：US20130285178A1

公开(公告)日：2013-10-31

申请号：US13926048

申请日：2013-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangeun Lee ,  Sechung OH ,  Jeahyoung LEE ,  Woojin KIM ,  Junho JEONG ,  Woo Chang LIM

IPC: H01L43/02

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the fist vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

Abstract translation: 提供磁存储器件。 磁存储器件包括第一垂直磁性层和衬底上的第二垂直磁性层，第一垂直磁性层和第二垂直磁性层之间的隧道势垒层，以及在第一垂直磁性层之间的交换耦合层， 第一垂直磁性层和第一垂直磁性层的第二子层。

公开(公告)号：US20230186963A1

公开(公告)日：2023-06-15

申请号：US17970788

申请日：2022-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younghyun KIM ,  Sechung OH ,  Heeju SHIN ,  Jaehoon KIM ,  Sanghwan PARK ,  Junghwan PARK

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

CPC classification number: G11C11/1673 ,  G11C11/1653 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive random access memory device includes a pinned layer; a tunnel barrier layer on the pinned layer; a free layer structure on the tunnel barrier layer, the free layer structure including a plurality of magnetic layers and a plurality of metal insertion layers between the magnetic layers; and an upper oxide layer on the free layer structure, wherein each of the metal insertion layers includes a non-magnetic metal material doped with a magnetic material, and the metal insertion layers are spaced apart from each other.

公开(公告)号：US20180226575A1

公开(公告)日：2018-08-09

申请号：US15943698

申请日：2018-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juhyun KIM ,  Kiwoong KIM ,  Sechung OH ,  Woochang LIM

IPC: H01L43/12 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L43/08

Abstract: A semiconductor device and a method of forming the semiconductor device are disclosed. The semiconductor device includes a lower electrode and a magnetic tunnel junction structure disposed on the lower electrode. The magnetic tunnel junction structure includes a seed pattern disposed on the lower electrode. The seed pattern includes an amorphous seed layer and an oxidized seed layer disposed on a surface of the amorphous seed layer. The seed pattern may prevent the lattice structure of the lower electrode from adversely affecting the lattice structure of a pinned magnetic layer of the magnetic tunnel junction structure.