公开(公告)号：US20200035279A1

公开(公告)日：2020-01-30

申请号：US16591683

申请日：2019-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA UNIVERSITY Research and Business Foundation

Inventor： Woo Chang LIM ,  Kyung-Jin LEE ,  Gyungchoon GO ,  Seung-Jae LEE

IPC: G11C11/16 ,  G11C11/15 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

Abstract: Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.

公开(公告)号：US20130285178A1

公开(公告)日：2013-10-31

申请号：US13926048

申请日：2013-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangeun Lee ,  Sechung OH ,  Jeahyoung LEE ,  Woojin KIM ,  Junho JEONG ,  Woo Chang LIM

IPC: H01L43/02

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the fist vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

Abstract translation: 提供磁存储器件。 磁存储器件包括第一垂直磁性层和衬底上的第二垂直磁性层，第一垂直磁性层和第二垂直磁性层之间的隧道势垒层，以及在第一垂直磁性层之间的交换耦合层， 第一垂直磁性层和第一垂直磁性层的第二子层。

公开(公告)号：US20180151209A1

公开(公告)日：2018-05-31

申请号：US15659283

申请日：2017-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Chang LIM ,  Kyung-Jin LEE ,  Gyungchoon GO ,  Seung-Jae LEE

IPC: G11C11/16 ,  G11C11/15 ,  H01L27/22 ,  H01L43/08

CPC classification number: G11C11/16 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/1693 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.