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公开(公告)号:US20200035279A1
公开(公告)日:2020-01-30
申请号:US16591683
申请日:2019-10-03
Inventor: Woo Chang LIM , Kyung-Jin LEE , Gyungchoon GO , Seung-Jae LEE
Abstract: Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.
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公开(公告)号:US20130285178A1
公开(公告)日:2013-10-31
申请号:US13926048
申请日:2013-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jangeun Lee , Sechung OH , Jeahyoung LEE , Woojin KIM , Junho JEONG , Woo Chang LIM
IPC: H01L43/02
CPC classification number: H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the fist vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
Abstract translation: 提供磁存储器件。 磁存储器件包括第一垂直磁性层和衬底上的第二垂直磁性层,第一垂直磁性层和第二垂直磁性层之间的隧道势垒层,以及在第一垂直磁性层之间的交换耦合层, 第一垂直磁性层和第一垂直磁性层的第二子层。
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公开(公告)号:US20180151209A1
公开(公告)日:2018-05-31
申请号:US15659283
申请日:2017-07-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Woo Chang LIM , Kyung-Jin LEE , Gyungchoon GO , Seung-Jae LEE
CPC classification number: G11C11/16 , G11C11/15 , G11C11/161 , G11C11/1675 , G11C11/1693 , H01L27/222 , H01L43/02 , H01L43/08
Abstract: Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.
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