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公开(公告)号：US11854975B2
公开(公告)日：2023-12-26
申请号：US17459406
申请日：2021-08-27
发明人： Sung-Hun Lee , Seokjung Yun , Chang-Sup Lee , Seong Soon Cho , Jeehoon Han
IPC分类号： H01L23/528 , H10B41/20 , H10B41/27 , H10B43/10 , H10B43/20 , H10B43/27 , H10B43/35 , H10B43/50 , H01L21/768 , H01L23/522
CPC分类号： H01L23/5283 , H01L21/76816 , H01L21/76877 , H01L23/5226 , H10B41/20 , H10B41/27 , H10B43/10 , H10B43/20 , H10B43/27 , H10B43/35 , H10B43/50
摘要： A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.
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公开(公告)号：US20200251417A1
公开(公告)日：2020-08-06
申请号：US16853850
申请日：2020-04-21
发明人： Sung-Hun Lee , Seokjung Yun , Chang-Sup Lee , Seong Soon Cho , Jeehoon Han
IPC分类号： H01L23/528 , H01L27/11582 , H01L27/1157 , H01L23/522 , H01L21/768 , H01L27/11575 , H01L27/11565 , H01L27/11556 , H01L27/11551 , H01L27/11578
摘要： A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.
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公开(公告)号：US20220328520A1
公开(公告)日：2022-10-13
申请号：US17851310
申请日：2022-06-28
发明人： Chang-Sup Lee , Sung-Hun Lee , Joonhee Lee , Seong Soon Cho
IPC分类号： H01L27/11582 , H01L27/1157 , H01L27/11565 , H01L27/11575 , H01L23/522 , H01L23/528 , H01L23/535 , H01L27/11556 , H01L29/423
摘要： A three-dimensional semiconductor memory device includes a substrate including a cell array region and a connection region and an electrode structure including first and second electrodes alternatingly and vertically stacked on the substrate and having a stair-step structure on the connection region. Each of the first and second electrodes may include electrode portions provided on the cell array region to extend in a first direction and to be spaced apart from each other in a second direction perpendicular to the first direction, an electrode connecting portion provided on the connection region to extend in the second direction and to horizontally connect the electrode portions to each other, and protrusions provided on the connection region to extend from the electrode connecting portion in the first direction and to be spaced apart from each other in the second direction.
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公开(公告)号：US20200227438A1
公开(公告)日：2020-07-16
申请号：US16837169
申请日：2020-04-01
发明人： Chang-Sup Lee , Sung-Hun Lee , Joonhee Lee , Seong Soon Cho
IPC分类号： H01L27/11582 , H01L27/1157 , H01L27/11565 , H01L27/11575 , H01L23/522 , H01L23/528 , H01L23/535 , H01L27/11556 , H01L29/423
摘要： A three-dimensional semiconductor memory device includes a substrate including a cell array region and a connection region and an electrode structure including first and second electrodes alternatingly and vertically stacked on the substrate and having a stair-step structure on the connection region. Each of the first and second electrodes may include electrode portions provided on the cell array region to extend in a first direction and to be spaced apart from each other in a second direction perpendicular to the first direction, an electrode connecting portion provided on the connection region to extend in the second direction and to horizontally connect the electrode portions to each other, and protrusions provided on the connection region to extend from the electrode connecting portion in the first direction and to be spaced apart from each other in the second direction.
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公开(公告)号：US20190228824A1
公开(公告)日：2019-07-25
申请号：US16368916
申请日：2019-03-29
发明人： Joonhee Lee , Jiyoung Kim , Jintaek Park , Seong Soon Cho
摘要： Semiconductor devices are provided. A semiconductor device includes a stack of alternating gates and insulating layers. The semiconductor device includes a dummy cell region. The semiconductor device includes a plurality of bit lines and a plurality of auxiliary bit lines. Some of the plurality of auxiliary bit lines have different respective lengths. Related methods of forming semiconductor devices are also provided.
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公开(公告)号：US09812526B2
公开(公告)日：2017-11-07
申请号：US15260135
申请日：2016-09-08
发明人： Kyung-Jun Shin , Byoungil Lee , Dongseog Eun , Hyunkook Lee , Seong Soon Cho
IPC分类号： H01L29/49 , H01L29/10 , H01L27/1157 , H01L27/11582
CPC分类号： H01L29/1083 , H01L21/764 , H01L27/1157 , H01L27/11582
摘要： A three-dimensional (3D) semiconductor device includes a plurality of gate electrodes stacked on a substrate in a direction normal to a top surface of the substrate, a channel structure passing through the gate electrodes and connected to the substrate, and a void disposed in the substrate and positioned below the channel structure.
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公开(公告)号：US09553101B2
公开(公告)日：2017-01-24
申请号：US14258772
申请日：2014-04-22
发明人： Taekyung Kim , Kwang Soo Seol , Hyunchul Back , Jin-Soo Lim , Seong Soon Cho
IPC分类号： H01L27/115 , H01L27/06 , H01L27/24 , H01L29/66 , H01L29/788 , H01L29/792 , H01L45/00
CPC分类号： H01L27/11578 , H01L27/0688 , H01L27/11519 , H01L27/11556 , H01L27/11582 , H01L27/11597 , H01L27/2409 , H01L27/2454 , H01L27/249 , H01L29/66825 , H01L29/66833 , H01L29/7889 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/10 , H01L45/1226 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148
摘要： A semiconductor device may include gate structures spaced apart above a top surface of a substrate. The gate structures may include a horizontal electrode extending in a first direction parallel with the top surface of a substrate. An isolation insulating layer may be disposed between the gate structures. A plurality of cell pillars may penetrate the horizontal electrode and connect to the substrate. The plurality of cell pillars may include a minimum spacing defined by a shortest distance between any two of the plurality of cell pillars. The thickness of the horizontal electrode may be greater than the minimum spacing of the cell pillars.
摘要翻译： 半导体器件可以包括在衬底的顶表面之上间隔开的栅极结构。 栅极结构可以包括在与衬底的顶表面平行的第一方向上延伸的水平电极。 隔离绝缘层可以设置在栅极结构之间。 多个单元柱可以穿透水平电极并连接到基板。 多个单元柱可以包括由多个单元柱中的任何两个之间的最短距离限定的最小间隔。 水平电极的厚度可以大于电池柱的最小间距。
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公开(公告)号：US09379115B2
公开(公告)日：2016-06-28
申请号：US14089075
申请日：2013-11-25
发明人： Jinhyun Shin , Minchul Kim , Seong Soon Cho , Seungwook Chol
IPC分类号： H01L27/105 , H01L27/06 , H01L27/115 , H01L49/02
CPC分类号： H01L27/1052 , H01L27/0629 , H01L27/105 , H01L27/11526 , H01L27/11531 , H01L28/20
摘要： In a semiconductor device and a method of making the same, the semiconductor device comprises a substrate including a first region and a second region. At least one first gate structure is on the substrate in the first region, the at least one first gate structure including a first gate insulating layer and a first gate electrode layer on the first gate insulating layer. At least one isolating structure is in the substrate in the second region, a top surface of the isolating structure being lower in height than a top surface of the substrate. At least one resistor pattern is on the at least one isolating structure.
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公开(公告)号：US20240105604A1
公开(公告)日：2024-03-28
申请号：US18526208
申请日：2023-12-01
发明人： Sung-Hun Lee , Seokjung Yun , Chang-Sup Lee , Seong Soon Cho , Jeehoon Han
IPC分类号： H01L23/528 , H01L21/768 , H01L23/522 , H10B41/20 , H10B41/27 , H10B43/10 , H10B43/20 , H10B43/27 , H10B43/35 , H10B43/50
CPC分类号： H01L23/5283 , H01L21/76816 , H01L21/76877 , H01L23/5226 , H10B41/20 , H10B41/27 , H10B43/10 , H10B43/20 , H10B43/27 , H10B43/35 , H10B43/50
摘要： A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.
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公开(公告)号：US20180315772A1
公开(公告)日：2018-11-01
申请号：US16019119
申请日：2018-06-26
发明人： Chang-Sup Lee , Sung-Hun Lee , Joonhee Lee , Seong Soon Cho
IPC分类号： H01L27/11582 , H01L23/535 , H01L29/423 , H01L27/11556 , H01L23/522 , H01L23/528
CPC分类号： H01L27/11582 , H01L23/5226 , H01L23/528 , H01L23/535 , H01L27/11556 , H01L27/11565 , H01L27/1157 , H01L27/11575 , H01L29/42328 , H01L29/42344
摘要： A three-dimensional semiconductor memory device includes a substrate including a cell array region and a connection region and an electrode structure including first and second electrodes alternatingly and vertically stacked on the substrate and having a stair-step structure on the connection region. Each of the first and second electrodes may include electrode portions provided on the cell array region to extend in a first direction and to be spaced apart from each other in a second direction perpendicular to the first direction, an electrode connecting portion provided on the connection region to extend in the second direction and to horizontally connect the electrode portions to each other, and protrusions provided on the connection region to extend from the electrode connecting portion in the first direction and to be spaced apart from each other in the second direction.
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