公开(公告)号：US20130049225A1

公开(公告)日：2013-02-28

申请号：US13660177

申请日：2012-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Pil-kyu KANG ,  Jung-Ho Kim ,  Jong-Wook Lee ,  Seung-woo Choi ,  Dae-Lok Bae

IPC: H01L23/48

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L24/25 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68359 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/13009 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/24145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/83894 ,  H01L2224/9202 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Microelectronic packages are fabricated by stacking integrated circuits upon one another. Each integrated circuit includes a semiconductor layer having microelectronic devices and a wiring layer on the semiconductor layer having wiring that selectively interconnects the microelectronic devices. After stacking, a via is formed that extends through at least two of the integrated circuits that are stacked upon one another. Then, the via is filled with conductive material that selectively electrically contacts the wiring. Related microelectronic packages are also described.

Abstract translation: 微电子封装通过彼此堆叠集成电路制造。 每个集成电路包括具有微电子器件的半导体层和在半导体层上具有有选择性地互连微电子器件的布线的布线层。 在堆叠之后，形成延伸通过彼此堆叠的至少两个集成电路的通孔。 然后，通孔被选择性地电接触布线的导电材料填充。 还描述了相关微电子封装。

公开(公告)号：US09705040B2

公开(公告)日：2017-07-11

申请号：US14939817

申请日：2015-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-hoon Ha ,  Sang-yeob Song ,  Gi-bum Kim ,  Jae-in Sim ,  Seung-woo Choi

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/42

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016

Abstract: A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.