公开(公告)号：US20230268017A1

公开(公告)日：2023-08-24

申请号：US18310843

申请日：2023-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/34 ,  G11C16/04 ,  G11C5/06 ,  G11C11/4074 ,  G11C11/408 ,  G11C11/4096 ,  H10B43/27 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/3418 ,  G11C5/06 ,  G11C11/4074 ,  G11C11/4085 ,  G11C11/4096 ,  H10B43/27 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10 ,  H10B43/35

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20130242667A1

公开(公告)日：2013-09-19

申请号：US13867716

申请日：2013-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/08 ,  G11C16/26 ,  G11C16/14 ,  G11C16/12

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3418 ,  H01L27/1157 ,  H01L27/11582

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20200234782A1

公开(公告)日：2020-07-23

申请号：US16844317

申请日：2020-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/34 ,  G11C16/04 ,  H01L27/11582 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20150117118A1

公开(公告)日：2015-04-30

申请号：US14590665

申请日：2015-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/14

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3418 ,  H01L27/1157 ,  H01L27/11582

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20220093195A1

公开(公告)日：2022-03-24

申请号：US17542183

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/34 ,  G11C16/04 ,  H01L27/11582 ,  G11C5/06 ,  G11C11/4074 ,  G11C11/408 ,  G11C11/4096 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20190096495A1

公开(公告)日：2019-03-28

申请号：US16206383

申请日：2018-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C16/14 ,  G11C16/04 ,  G11C16/08 ,  H01L27/11582

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.