Memory device and memory system
    3.
    发明授权

    公开(公告)号:US11848043B2

    公开(公告)日:2023-12-19

    申请号:US17689064

    申请日:2022-03-08

    CPC classification number: G11C11/406 G11C11/4085 G11C11/4087

    Abstract: A memory device includes memory cells connected to a first word-line, wherein the memory cells include a data region in which data is stored and a counting value backup region in which the number of times the first word-line is activated is backed up, a counting table for storing a first row address corresponding to the first word-line and a first counting value as a counting result of the number of times the first word-line is activated, and a comparator configured to compare the first counting value with a first backed-up counting value stored in the counting value backup region; and when the first counting value is greater than the first backed-up counting value, back up the first counting value in the counting value backup region, or when the first backed-up counting value is greater than the first counting value, overwrite the first backed-up counting value into the counting table.

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