公开(公告)号：US20190157294A1

公开(公告)日：2019-05-23

申请号：US16118647

申请日：2018-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kohji KANAMORI ,  Young-Hwan SON ,  Byung-Kwan YOU ,  Eun-Taek JUNG

IPC: H01L27/11582 ,  H01L21/768 ,  H01L23/532 ,  H01L21/56 ,  H01L21/764 ,  H01L29/423 ,  H01L21/28

CPC classification number: H01L27/11582 ,  H01L21/565 ,  H01L21/764 ,  H01L21/76832 ,  H01L23/5329 ,  H01L27/1157 ,  H01L28/88 ,  H01L29/40117 ,  H01L29/4234 ,  H01L29/66833

Abstract: A vertical memory device includes first, second and third impurity regions sequentially stacked in a first direction substantially perpendicular to an upper surface of a substrate, a gate electrode structure including gate electrodes spaced apart from each other in the first direction on the third impurity region, a channel extending through the gate electrode structure, the second and third impurity regions, and an upper portion of the first impurity region on the substrate in the first direction, and a charge storage structure covering a portion of an outer sidewall and a lower surface of the channel. The channel directly contacts a sidewall of the second impurity region.

公开(公告)号：US20230292515A1

公开(公告)日：2023-09-14

申请号：US18321080

申请日：2023-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Hwan SON ,  Kohji KANAMORI ,  Shin-Hwan KANG ,  Young Jin KWON

IPC: H10B43/27 ,  H01L23/535 ,  H10B43/40

CPC classification number: H10B43/27 ,  H01L23/535 ,  H10B43/40

Abstract: A vertical memory device includes gate electrodes on a substrate, a channel extending through the gate electrodes, and a contact plug extending through the gate electrodes. The gate electrodes are stacked in a first direction substantially vertical to an upper surface of the substrate and arranged to have a staircase shape including steps of which extension lengths in a second direction substantially parallel to the upper surface gradually increase from a lowermost level toward an uppermost level. A pad at an end portion of each of the gate electrodes in the second direction has a thickness greater than those of other portions thereof. The channel extends in the first direction. The contact plug extends in the first direction. The channel contacts the pad of a first gate electrode among the gate electrodes to be electrically connected thereto, and is electrically insulated from second gate electrodes among the gate electrodes.