公开(公告)号：US20150267100A1

公开(公告)日：2015-09-24

申请号：US14657443

申请日：2015-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Industry-University Cooperation Foundation Hanyang University (IUCF-HYU)

Inventor： Hong Suk Kim ,  Myong Jong Kwon ,  Seung Jin Oh ,  Yunho Gwak ,  Young-Pil Kim ,  Ji-In Park ,  EonSeon Jin

IPC: C09K3/18 ,  C09D189/00

CPC classification number: C09K3/18 ,  C07K17/14 ,  C08H1/00 ,  C09D189/00 ,  F28F19/006 ,  F28F19/04 ,  Y10T428/31678 ,  C08L89/00

Abstract: An antifreeze member includes a metal substrate, and a first coating layer including a recombinant antifreeze protein in which a metal-binding protein is conjugated to a performance-enhancing reformed antifreeze protein, and being bonded to the metal substrate via the metal-binding protein.

Abstract translation: 防冻构件包括金属基底和包含重金属结合蛋白的重组抗冻蛋白的第一被覆层，其中金属结合蛋白与增强性能的改性抗冻蛋白结合，并通过金属结合蛋白与金属底物结合。

公开(公告)号：US09816021B2

公开(公告)日：2017-11-14

申请号：US14657443

申请日：2015-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Industry-University Cooperation Foundation Hanyang University (IUCF-HYU)

Inventor： Hong Suk Kim ,  Myong Jong Kwon ,  Seung Jin Oh ,  Yunho Gwak ,  Young-Pil Kim ,  Ji-In Park ,  EonSeon Jin

IPC: C09K3/18 ,  C09D189/00 ,  C07K17/14 ,  C08H1/00 ,  F28F19/00 ,  F28F19/04

CPC classification number: C09K3/18 ,  C07K17/14 ,  C08H1/00 ,  C09D189/00 ,  F28F19/006 ,  F28F19/04 ,  Y10T428/31678 ,  C08L89/00

Abstract: An antifreeze member includes a metal substrate, and a first coating layer including a recombinant antifreeze protein in which a metal-binding protein is conjugated to a performance-enhancing reformed antifreeze protein, and being bonded to the metal substrate via the metal-binding protein.

公开(公告)号：US09153692B2

公开(公告)日：2015-10-06

申请号：US14194837

申请日：2014-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Tae-Ouk Kwon ,  Su-Jin Jung ,  Young-Pil Kim ,  Byeong-Chan Lee ,  Bon-Young Koo

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L29/66545 ,  H01L29/785

Abstract: Provided is a semiconductor device. The semiconductor device includes a fin on a substrate; a gate electrode cross the fin on the substrate; a source/drain formed on at least one of both sides of the gate electrode, and including a first film and a second film; and a stress film arranged between an isolation film on the substrate and the source/drain, and formed on a side surface of the fin.

Abstract translation: 提供一种半导体器件。 半导体器件在衬底上包括翅片; 栅电极跨越衬底上的翅片; 源极/漏极，形成在栅电极的两侧中的至少一个上，并且包括第一膜和第二膜; 以及布置在基板上的隔离膜和源极/漏极之间并且形成在鳍的侧表面上的应力膜。

公开(公告)号：US20130171818A1

公开(公告)日：2013-07-04

申请号：US13728622

申请日：2012-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Bum Kim ,  Young-Pil Kim ,  Kwan-Heum Lee ,  Sun-Ghil Lee

IPC: H01L21/285

CPC classification number: H01L21/285 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76889 ,  H01L27/10855 ,  H01L28/91

Abstract: In a method of forming an ohmic layer of a DRAM device, the metal silicide layer between the storage node contact plug and the lower electrode of a capacitor is formed as the ohmic layer by a first heat treatment under a first temperature and an instantaneous second heat treatment under a second temperature higher than the first temperature. Thus, the metal silicide layer has a thermo-stable crystal structure and little or no agglomeration occurs on the metal silicide layer in the high temperature process. Accordingly, the sheet resistance of the ohmic layer may not increase in spite of the subsequent high temperature process.

Abstract translation: 在形成DRAM器件的欧姆层的方法中，通过在第一温度和瞬时第二次加热下的第一次热处理将存储节点接触插塞和电容器的下部电极之间的金属硅化物层形成为欧姆层 在比第一温度高的第二温度下进行处理。 因此，金属硅化物层具有热稳定的晶体结构，并且在高温工艺中在金属硅化物层上几乎或不发生聚集。 因此，尽管随后的高温处理，欧姆层的薄层电阻也可能不增加。